TSP18N20M

TSP18N20M TSP18N20M 200V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Absolute Maximum Ratings Symbol • 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V • Low gate charge(typical 22nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability TC=25℃ unless otherwise specified Value Units VDSS Drain-Source Voltage Parameter 200 V VGS Gate-Source Voltage ± 30 V TC = 25℃ 18* A TC = 100℃ 9.1* A ID Drain Current IDM Pulsed Drain Current 72* A EAS Single Pulsed Avalanche Energy (Note 2) 453 mJ EAR Repetitive Avalanche Energy (Note 1) 13.9 mJ IAR Repetitive avalanche current 18 A PD Power Dissipation (TC = 25℃) TJ, TSTG (Note 1) Operating and Storage Temperature Range 35 W -55 to +150 ℃ * Drain current limited by maximum junction temperature. Thermal Resistance Characteristics Symbol Parameter Value Units RθJC Thermal Resistance,Junction-to-Case 3.57 ℃/W RθJA Thermal Resistance,Junction-to-Ambient 62.5 ℃/W © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com Symbol unless otherwise specified Parameter Test Conditions Min Typ Max Units Gate Threshold Voltage VDS = VGS, ID = 250 uA㎂ 2.0 -- 4.0 V Static Drain-Source On-Resistance VGS = 10 V, ID = 9A -- 0.14 0.17 Ω Forward transfer conductance(note 3) VDS = 10 V, ID = 10A -- 35 -- S 200 -- -- V uA On Characteristics VGS(th) RDS(ON) gfs Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 uA㎂ IDSS Zero Gate Voltage Drain Current VDS = 200 V, VGS = 0 V -- -- 1 IGSSF Gate-Body Leakage Current,Forward VGS = 30 V, VDS = 0 V -- -- 100 nA㎁ IGSSR Gate-Body Leakage Current,Reverse VGS =- 30 V, VDS = 0 V -- -- -100 nA㎁ -- 965 -- pF㎊ -- 227 310 pF㎊ -- 55 71 pF -- 15 -- ns -- 130 -- ns㎱ -- 135 -- ns㎱ -- 105 -- ns㎱ -- 22 28 nC -- 6.6 -- nC -- 7.2 -- nC -- -- 18 -- -- 72 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDS = 125 V, ID = 18A, RG = 25 Ω (Note 3,4) VDS = 160 V, ID = 18A, VGS = 10 V (Note 3,4) Gate-Drain Charge Source-Drain Diode Maximum Ratings and Characteristics IS Continuous Source-Drain Diode Forward Current ISM Pulsed Source-Drain Diode Forward Current VSD Source-Drain Diode Forward Voltage IS = 18A, VGS = 0 V -- -- 1.4 trr Reverse Recovery Time IS =18A, VGS = 0 V -- 208 -- ns㎱ Qrr Reverse Recovery Charge diF/dt = 100 A/μs -- 1.63 -- uC A (Note 1) (Note 4) V Note: 1. Repeated rating: Pulse width limited by maximum junction temperature 2. L=2.1mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ=25℃ 3. Pulse test: Pulse width≤300us, Duty cycle≤2% 4. Essentially independent of operating temperature © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com TSP18N20M Electrical Characteristics TC=25 ℃ © 2018 Truesemi Semiconductor Corporation TSP18N20M Typical Characteristics Ver.B1 www.truesemi.com TSP18N20M Typical Characteristics © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com TSP18N20M Fig 11. Gate Charge Test Circuit & Waveform 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Fig 12. Resistive Switching Test Circuit & Waveforms RL VDS VDS 90% VDD RG ( 0.5 rated VDS ) Vin DUT 10V 10% td(on) tr td(off) t on tf t off Fig 13. Unclamped Inductive Switching Test Circuit & Waveforms L 1 EAS = ---- LL IAS2 2 VDS VDD ID BVDSS IAS RG ID (t) 10V DUT VDS (t) VDD tp © 2018 Truesemi Semiconductor Corporation Ver.B1 Time www.truesemi.com TSP18N20M Fig 14. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ IS L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • IS controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD Vf Body Diode Forward Voltage Drop © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com TSP18N20M Package Dimension TO-220 © 2018 Truesemi Semiconductor Corporation Ver.B1 www.truesemi.com