SFS06R03GF

SFS06R03GF Enhancement Mode N-Channel Power MOSFET General Description FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent reliability and uniformity  Fast switching and soft recovery Applications  PD charger  Motor driver  Switching voltage regulator  DC-DC convertor  Switched mode power supply Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 60 V ID, pulse 480 A 3 mΩ 66.1 nC RDS(ON) max @ VGS=10V Qg Marking Information Product Name Package Marking SFS06R03GF PDFN5*6 SFS06R03G Package & Pin information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 60 V Gate source voltage VGS ±20 V ID 160 A ID, pulse 480 A IS 160 A IS, Pulse 480 A Power dissipation3), TC=25 °C PD 140 W Single pulsed avalanche energy5) EAS 200 mJ Tstg，Tj -55 to 150 °C Continuous drain current1), TC=25 °C Pulsed drain current2), TC=25 °C Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case RθJC 0.89 °C/W Thermal resistance, junction-ambient4) RθJA 62 °C/W Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Drain-source on-state resistance Symbol Min. BVDSS 60 VGS(th) 1.3 Typ. Max. Unit Test condition V VGS=0 V, ID=250 μA 2.5 V VDS=VGS, ID=250 μA RDS(ON) 2.3 3.0 mΩ VGS=10 V, ID=20 A RDS(ON) 3.5 4.0 mΩ VGS=4.5 V, ID=10 A 100 Gate-source leakage current IGSS Drain-source leakage current IDSS VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 1 VGS=-20 V μA VDS=60 V, VGS=0 V Page.2 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 5377 pF Output capacitance Coss 1666 pF Reverse transfer capacitance Crss 77.7 pF Turn-on delay time td(on) 22.5 ns tr 6.7 ns td(off) 80.3 ns tf 26.8 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=25 V, ƒ=100 kHz VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 66.1 nC Gate-source charge Qgs 10.7 nC Gate-drain charge Qgd 10.9 nC Vplateau 2.9 V Gate plateau voltage Test condition VGS=10 V, VDS=30 V, ID=25 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 68.3 ns Reverse recovery charge Qrr 73.0 nC Peak reverse recovery current Irrm 1.9 A Test condition IS=20 A, VGS=0 V VR=30 V, IS=25 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 10 V 7V VDS= 10 V Tj = 25 ℃ 4.5 V 100 ID, Drain current(A) ID, Drain current (A) 1000 5V 6V 400 300 4V 200 3.5 V 10 1 100 3V VGS= 2.5 V 0 0 1 2 3 4 5 6 7 8 0.1 9 0 10 2 Figure 1. Typ. output characteristics 10 5 7.5 VGS, Gate-source voltage(V) C, Capacitance (pF) VDS = 30 V Ciss 10 2 10 1 10 ID = 25 A 4 3 8 10.0 VGS = 0 V 10 6 Figure 2. Typ. transfer characteristics f = 100 kHz 10 4 VGS, Gate-source voltage(V) VDS, Drain-source voltage (V) Coss 5.0 2.5 Crss 0 10 20 30 40 50 60 0.0 0 10 Figure 3. Typ. capacitances 40 50 60 70 6m ID = 20 A ID = 250 μA VGS = 0 V 5m RDS(ON), On-resistance(W) BVDSS, Drain-source breakdown voltage (V) 30 Figure 4. Typ. gate charge 74 72 20 Qg, Gate charge(nC) VDS, Drain-source voltage (V) 70 68 VGS = 10 V 4m 3m 2m 66 1m 64 -50 0 50 100 150 Tj, Junction Temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 -50 0 50 100 150 Tj, Junction Temperature (℃) Figure 6. Drain-source on-state resistance Page.4 SFS06R03GF Enhancement Mode N-Channel Power MOSFET 2.25 Tj = 25 ℃ ID = 250 μA 100 IS, Source current (A) Vth, Threshold voltage (V) 2.00 1.75 10 1.50 1.25 1 1.00 0.75 -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-Drain voltage (V) Tj, Junction Temperature (℃) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 0.05 180 160 140 ID, Drain current (A) RDS(ON), On-resistance(W) 0.04 0.03 5V 4.5 V 4V 3.5 V VGS=3 V 0.02 120 100 80 60 40 0.01 6V 20 10 V 0.00 50 100 150 200 250 300 350 400 0 450 0 25 ID, Drain current(A) Figure 9. Drain-source on-state resistance 50 75 100 TC, Case temperature (°C) 125 150 100 101 Figure 10. Drain current 101 1000 ID, Drain current(A) 100 10 μs 100 μs RDS(ON) Limited 10 1 ms 10 ms DC 1 0.1 0.1 1 10 100 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25 °C Oriental Semiconductor © Copyright Reserved V2.0 zthjc Thermal Response(K/W) D= tp/T 100 0.5 10-1 10-2 10-3 10-5 0.02 0.01 0.05 0.1 D= 1 0.2 Single Pulse 10-4 10-3 10-2 10-1 tp Pulse width(s) Figure 12. Max. transient thermal impedance Page.5 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Package Information mm Symbol Min Nom Max A 1.00 1.10 1.20 b 0.30 0.40 0.50 c 0.154 0.254 0.354 D1 5.00 5.20 5.40 D2 3.80 4.10 4.25 e 1.17 1.27 1.37 E1 5.95 6.15 6.35 E2 5.66 5.86 6.06 E4 3.52 3.72 3.92 H 0.40 0.50 0.60 L 0.30 0.60 0.70 L1 K 0.12 REF 1.15 1.30 1.45 Version 1: PDFN5*6-P package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Package Information Symbol mm Min Nom Max A 0.8 0.9 1.0 A1 0 0.03 0.05 b 0.35 0.42 0.49 c D 0.254 REF 4.9 F E 5.0 5.1 1.40 REF 5.7 e 5.8 5.9 1.27 BSC H 5.95 6.08 6.20 L1 0.10 0.14 0.18 G 0.60 REF K 4.00 REF Version 2: PDFN5*6-K package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.8 SFS06R03GF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels / Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box PDFN5*6-P 2500 2 5000 5 25000 PDFN5*6-K 2500 2 5000 5 25000 Product Information Product Package Pb Free RoHS Halogen Free SFS06R03GF PDFN5*6 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.9