SFS06R045UNF

SFS06R045UNF Enhancement Mode N-Channel Power MOSFET General Description ® FSMOS MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially optimized for synchronous rectification systems with low driving voltage. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent reliability and uniformity  Fast switching and soft recovery Applications  PD charger  Motor driver  Switching voltage regulator  DC-DC convertor  Switched mode power supply Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 60 V ID, pulse 180 A RDS(ON), max @ VGS=10V 4.5 mΩ Qg 31.3 nC Product Name Package Marking SFS06R045UNF PDFN3.3*3.3 SFS06R045UN Marking Information Package & Pin information Oriental Semiconductor © Copyright Reserved V1.0 Page.1 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 60 V Gate-source voltage VGS ±20 V ID 60 A ID, pulse 180 A IS 60 A IS, pulse 180 A PD 31 W EAS 49 mJ Tstg, Tj -55 to 150 °C Symbol Value Unit RθJC 4.03 °C/W RθJA 62 °C/W 1) Continuous drain current , TC=25 °C 2) Pulsed drain current , TC=25 °C 1) Continuous diode forward current , TC=25 °C 2) Diode pulsed current , TC=25 °C Power dissipation 3) , TC=25 °C 5) Single pulsed avalanche energy Operation and storage temperature Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient 4) Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Drain-source on-state resistance Symbol Min. BVDSS 60 VGS(th) 1.3 Typ. Max. Unit Test condition V VGS=0 V, ID=250 μA 2.4 V VDS=VGS, ID=250 μA RDS(ON) 3.7 4.5 mΩ VGS=10 V, ID=20 A RDS(ON) 5.3 6.5 mΩ VGS=4.5 V, ID=20 A 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V1.0 1 2.9 VGS=-20 V μA VDS=60 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 2110 pF Output capacitance Coss 604 pF Reverse transfer capacitance Crss 50.6 pF Turn-on delay time td(on) 19.2 ns tr 6.2 ns td(off) 43.2 ns tf 8.6 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=25 V, ƒ=100 kHz VGS=10 V, VDS=30 V, RG=2 Ω, ID=60 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 31.3 nC Gate-source charge Qgs 6.2 nC Gate-drain charge Qgd 5.9 nC Vplateau 3.6 V Gate plateau voltage Test condition VGS=10 V, VDS=30 V, ID=60 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 61.2 ns Reverse recovery charge Qrr 35 nC Peak reverse recovery current Irrm 1 A Test condition IS=20 A, VGS=0 V VR=48 V, IS=50 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V1.0 Page.3 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 400 1000 Tj = 25 °C 350 VDS = 10 V VGS= 10 V 300 Tj = 25 °C 100 250 ID, Drain current(A) ID, Drain current (A) VGS= 6 V VGS= 5 V 200 VGS= 4.5 V 150 VGS= 4 V 100 VGS= 3.5 V 50 1 VGS= 3 V 0.1 0 0 2 4 6 VDS, Drain-source voltage (V) 8 0 10 2 4 6 8 10 VGS, Gate-source voltage(V) Figure 1. Typ. output characteristics Figure 2. Typ. transfer characteristics 104 10 ID = 60 A VDS = 30 V VGS, Gate-source voltage(V) Ciss C, Capacitance (pF) 10 8 103 6 Coss 4 102 f =100 kHz 2 Crss VGS = 0 V 101 0 0 20 40 60 0 5 10 VDS, Drain-source voltage (V) 20 25 30 35 Figure 4. Typ. gate charge 8m 74 ID = 250 μA VGS = 0 V 7m RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) Figure 3. Typ. capacitances 72 15 Qg, Gate charge(nC) 70 68 66 ID = 20 A VGS = 10 V 6m 5m 4m 3m 64 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V1.0 2m -50 0 50 100 Tj, Junction temperature (°C) 150 Figure 6. Drain-source on-state resistance Page.4 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET 2.2 1000 Tj = 25 ℃ ID = 250 μA 100 IS, Source current (A) Vth, Threshold voltage (V) 2.0 1.8 1.6 1.4 10 1 1.2 0.1 1.0 -50 0 50 100 0.4 150 0.8 1.2 1.6 2.0 VSD, Source-drain voltage (V) Tj, Junction temperature (°C) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 25m 70 VGS=3.5 V 4.5 V 5 V 4V 6V 10 V ID, Drain current (A) RDS(ON), On-resistance(Ω) 60 20m 15m 10m 5m 50 40 30 20 10 50 100 150 200 250 300 350 0 400 0 ID, Drain current(A) 25 Figure 9. Drain-source on-state resistance 1000 100 μs 10 RDS(ON) Limited 1 ms 1 10 ms DC 0.1 100 125 150 D= tp/T D= 1 zthjc, Thermal Response(K/W) ID, Drain current(A) 10 μs 75 Figure 10. Drain current 101 100 50 TC, Case temperature (°C) 0.5 100 0.2 0.1 0.05 0.02 10-1 0.01 Single Pulse 10-2 0.01 0.01 0.1 1 10 100 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25 ℃ Oriental Semiconductor © Copyright Reserved V1.0 10-5 10-4 10-3 10-2 10-1 tp, Pulse width(s) Figure 12. Max. transient thermal impedance Page.5 100 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V1.0 Page.6 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Package Information mm Symbol Min Nom Max A 0.50 - 0.60 A1 - - 0.005 A2 0.10 - 0.25 D 3.20 3.30 3.40 E 3.20 3.30 3.40 D1 2.80 2.90 3.00 E1 1.91 2.01 2.11 b 0.25 0.30 0.35 L 0.30 0.35 0.40 L1 0.01 0.05 0.09 k 0.57 0.67 0.77 e 0.65 BSC Version 1: PDFN3.3*3.3-X package outline dimension Oriental Semiconductor © Copyright Reserved V1.0 Page.7 SFS06R045UNF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box PDFN3.3*3.3-X 5000 1 5000 8 40000 Product Information Product Package Pb Free RoHS Halogen Free SFS06R045UNF PDFN3.3*3.3 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V1.0 Page.8