SFS15R10GNF

SFS15R10GNF Enhancement Mode N-Channel Power MOSFET General Description FSMOS® MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially designed to use in power supply systems with driving voltage of more than 10V. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent reliability and uniformity  Fast switching and soft recovery Applications  Switched mode power supply  Motor driver  Battery protection  DC-DC convertor  Inverters  UPS Key Performance Parameters Parameter Value Unit VDS 150 V ID, pulse 240 A RDS(ON), max @ VGS=10V 10 mΩ Qg 70 nC Product Name Package Marking SFS15R10GNF PDFN5*6 SFS15R10GN Marking Information Package & Pin information Oriental Semiconductor © Copyright Reserved V1.0 Page.1 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain-source voltage VDS 150 V Gate-source voltage VGS ±20 V ID 80 A ID, pulse 240 A IS 80 A IS, pulse 240 A Power dissipation3), TC=25 °C PD 160 W Single pulsed avalanche energy5) EAS 80 mJ Tstg, Tj -55 to 150 °C Symbol Value Unit Thermal resistance, junction-case RθJC 0.78 °C/W Thermal resistance, junction-ambient4) RθJA 62 °C/W Continuous drain current1), TC=25 °C Pulsed drain current2), TC=25 °C Continuous diode forward current1), TC=25 °C Diode pulsed current2), TC=25 °C Operation and storage temperature Thermal Characteristics Parameter Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Symbol Min. BVDSS 150 VGS(th) 3.0 RDS(ON) Typ. 9 Max. Unit V VGS=0 V, ID=250 μA 4.5 V VDS=VGS, ID=250 μA 10 mΩ 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=10 V, ID=20 A VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V1.0 Test condition 1 2.4 VGS=-20 V μA VDS=135 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 5132 pF Output capacitance Coss 1674 pF Reverse transfer capacitance Crss 175 pF Turn-on delay time td(on) 22 ns tr 22 ns td(off) 38 ns tf 8.8 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=25 V, ƒ=100 kHz VGS=10 V, VDS=75 V, RG=2 Ω, ID=44 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 70 nC Gate-source charge Qgs 27 nC Gate-drain charge Qgd 18 nC Vplateau 6.2 V Gate plateau voltage Test condition VGS=10 V, VDS=75 V, ID=44 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 76 ns Reverse recovery charge Qrr 285 nC Peak reverse recovery current Irrm 5.9 A Test condition IS=20 A, VGS=0 V VR=80 V, IS=40 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V1.0 Page.3 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 1000 280 Tj = 25 °C Tj = 25 °C ID, Drain current(A) 100 200 ID, Drain current (A) VDS = 10 V VGS= 10 V 240 VGS= 7.5 V 160 VGS= 7 V 120 VGS= 6.5 V 80 10 1 VGS= 6 V 40 0.1 0 0 2 4 6 8 VDS, Drain-source voltage (V) 2 10 Figure 1. Typ. output characteristics 6 8 10 Figure 2. Typ. transfer characteristics 104 10 ID = 44 A VDS = 75 V VGS, Gate-source voltage(V) Ciss 8 3 10 C, Capacitance (pF) 4 VGS, Gate-source voltage(V) Coss 6 102 4 Crss 101 2 f = 100 kHz VGS = 0 V 100 0 30 60 90 120 150 0 0 10 20 VDS, Drain-source voltage (V) 40 50 60 70 Figure 4. Typ. gate charge Figure 3. Typ. capacitances 16m 170 ID = 20 A ID = 250 μA VGS = 0 V RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 30 Qg, Gate charge(nC) 165 160 155 150 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V1.0 14m VGS = 10 V 12m 10m 8m 6m -50 0 50 100 Tj, Junction temperature (°C) 150 Figure 6. Drain-source on-state resistance Page.4 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET 4.6 1000 ID = 250 μA Tj = 25 ℃ 100 4.2 IS, Source current (A) Vth, Threshold voltage (V) 4.4 4.0 3.8 3.6 3.4 10 1 3.2 0.1 3.0 -50 0 50 100 0.4 150 0.8 1.2 1.6 2.0 VSD, Source-drain voltage (V) Tj, Junction temperature (°C) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 60m 90 80 VGS=6 V 6.5 V 7.5 V 7V 10 V 70 ID, Drain current (A) RDS(ON), On-resistance(Ω) 50m 40m 30m 20m 60 50 40 30 20 10m 10 0 40 80 120 160 200 240 0 280 0 ID, Drain current(A) 25 Figure 9. Drain-source on-state resistance ID, Drain current(A) 10 100 μs RDS(ON) Limited 1 ms 10 ms DC 1 100 125 150 D= tp/T zthjc, Thermal Response(K/W) 100 10 μs 75 Figure 10. Drain current 1000 100 50 TC, Case temperature (°C) D= 1 0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single Pulse 10-2 0.1 0.1 1 10 100 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25℃ Oriental Semiconductor © Copyright Reserved V1.0 10-5 10-4 10-3 10-2 10-1 100 tp, Pulse width(s) Figure 12. Max. transient thermal impedance Page.5 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V1.0 Page.6 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Package Information mm Symbol Min Nom Max A 1.00 1.10 1.20 b 0.30 0.40 0.50 c 0.154 0.254 0.354 D1 5.00 5.20 5.40 D2 3.80 4.10 4.25 e 1.17 1.27 1.37 E1 5.95 6.15 6.35 E2 5.66 5.86 6.06 E4 3.52 3.72 3.92 H 0.40 0.50 0.60 L 0.30 0.60 0.70 L1 K 0.12 REF 1.15 1.30 1.45 Version 1: PDFN5*6-P package outline dimension Oriental Semiconductor © Copyright Reserved V1.0 Page.7 SFS15R10GNF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box PDFN5*6-P 5000 2 10000 5 50000 Product Information Product Package Pb Free RoHS Halogen Free SFS15R10GNF PDFN5*6 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V1.0 Page.8