SFS08R03GNF

SFS08R03GNF Enhancement Mode N-Channel Power MOSFET General Description ® SFGMOS MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The high Vth series is specially optimized for high systems with gate driving voltage greater than 10V. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent stability and uniformity  Fast switching and soft recovery Applications  Switched mode power supply  Motor driver  Battery protection  DC-DC convertor  Solar inverter  UPS and energy inverter Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 80 V ID, pulse 390 A RDS(ON), max @ VGS=10V 3.3 mΩ Qg 71.5 nC Marking Information Product Name Package Marking SFS08R03GNF PDFN5*6 SFS08R03GN Package & Pin information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 80 V Gate source voltage VGS ±20 V ID 130 A ID, pulse 390 A IS 130 A IS, pulse 390 A PD 132 W EAS 194 mJ Tstg，Tj -55 to 150 °C 1) Continuous drain current , TC=25 °C 2) Pulsed drain current , TC=25 °C 1) Continuous diode forward current , TC=25 °C 2) Diode pulsed current , TC=25 °C 3) Power dissipation , TC=25 °C 5) Single pulsed avalanche energy Operation and storage temperature Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient 4) Symbol Value Unit RθJC 0.95 °C/W RθJA 62 °C/W Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Symbol Min. BVDSS 80 VGS(th) 2.0 RDS(ON) Typ. 3.0 Max. Unit V VGS=0 V, ID=250 μA 4.0 V VDS=VGS, ID=250 μA 3.3 mΩ 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=10 V, ID=50 A VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 Test condition 1 2.6 VGS=-20 V μA VDS=80 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 5661 pF Output capacitance Coss 1631 pF Reverse transfer capacitance Crss 95.2 pF Turn-on delay time td(on) 28 ns tr 10 ns td(off) 60.2 ns tf 14 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=25 V, ƒ=100 kHz VGS=10 V, VDS=40 V, RG=2 Ω, ID=50 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 71.5 nC Gate-source charge Qgs 21 nC Gate-drain charge Qgd 10 nC Vplateau 4.4 V Gate plateau voltage Test condition VGS=10 V, VDS=40 V, ID=50 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 67.2 ns Reverse recovery charge Qrr 87.9 nC Peak reverse recovery current Irrm 2.2 A Test condition IS=12 A, VGS=0 V VR=50 V, IS=50 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 500 1000 10 V Tj = 25 ℃ Tj = 25 ℃ 6.5 V 400 100 ID, Drain current(A) ID, Drain current (A) VDS= 10 V 7V 6V 300 5.5 V 200 5V 4.5 V 100 10 1 VGS= 4 V 0.1 0 0 2 4 6 8 VDS,Drain-source voltage 0 10 Figure 1. Typ. output characteristics 8 10 ID = 50 A VGS, Gate-source voltage(V) 3 Coss 2 10 f = 100 kHz Crss VGS = 0 V 1 VDS = 40 V 8 6 4 2 0 10 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 Qg, Gate charge(nC) VDS, Drain-source voltage (V) Figure 3. Typ. capacitances Figure 4. Typ. gate charge 94 7m ID = 250 μA VGS = 0 V RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 6 10 Ciss 10 92 4 VGS, Gate-source voltage(V) Figure 2. Typ. transfer characteristics 4 10 C, Capacitance (pF) 2 90 88 86 84 6m ID =50 A VGS = 10 V 5m 4m 3m 2m 82 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 1m -50 0 50 100 Tj, Junction temperature (℃) 150 Figure 6. Drain-source on-state resistance Page.4 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET 3.5 1000 Tj = 25 ℃ 3.0 100 IS, Source current (A) Vth, Threshold voltage (V) ID = 250 μA 2.5 2.0 1.5 -50 0 50 100 0.4 1.6 2.0 140 120 25m 5.5 V 6V 100 6.5 V ID, Drain current (A) 5V VGS=4.5 V 15m 10m 10 V 5m 0 80 60 40 20 0 100 200 300 400 500 0 25 50 Figure 9. Drain-source on-state resistance zthjc, Thermal Response(K/W) 100 100 10 μs 100 μs RDS(ON) Limited 1 ms 10 ms 1 DC 0.1 0.1 1 10 VDS, Drain-source voltage(V) 100 125 150 Figure 10. Drain current 1000 10 75 TC, Case temperature (℃) ID, Drain current(A) ID, Drain current(A) 1.2 Figure 8. Forward characteristic of body diode 30m RDS(ON), On-resistance(Ω) 0.8 VSD, Source-drain voltage (V) Figure 7. Threshold voltage 20m 1 0.1 150 Tj, Junction temperature (℃) 10 100 Figure 11. Safe operation area TC=25 °C Oriental Semiconductor © Copyright Reserved V2.0 10-1 D= tp/T D= 1 0.5 0.2 0.1 0.05 10-2 10-5 0.02 0.01 Single Pulse 10-4 10-3 10-2 tp, Pulse width(s) 10-1 100 Figure 12. Max. transient thermal impedance Page.5 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Package Information mm Symbol Min Nom Max A 1.00 1.10 1.20 b 0.30 0.40 0.50 c 0.154 0.254 0.354 D1 5.00 5.20 5.40 D2 3.80 4.10 4.25 e 1.17 1.27 1.37 E1 5.95 6.15 6.35 E2 5.66 5.86 6.06 E4 3.52 3.72 3.92 H 0.40 0.50 0.60 L 0.30 0.60 0.70 L1 K 0.12 REF 1.15 1.30 1.45 Version 1: PDFN5*6-C package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Package Information Symbol mm Min Nom Max A 0.90 1.00 1.10 A1 0.00 - 0.05 b 0.33 0.41 0.51 C 0.20 0.25 0.30 D1 4.80 4.90 5.00 D2 3.61 3.81 3.96 E 5.90 6.00 6.10 E1 5.70 5.75 5.80 E2 3.38 3.58 3.78 e 1.27 BSC H 0.41 0.51 0.61 K 1.10 - - L 0.51 0.61 0.71 L1 0.06 0.13 0.20 а 0° - 12° Version 2: PDFN5*6-M package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.8 SFS08R03GNF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Reel Reels / Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box PDFN5*6-C 5000 2 10000 5 50000 PDFN5*6-M 5000 2 10000 5 50000 Product Information Product Package Pb Free RoHS Halogen Free SFS08R03GNF PDFN5*6 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.9