VIS30010

VIS30010 30V N-Channel Power Trench MOSFET General Description Product Summary • Trench Power MOSFET Technology VDS 30V • Low RDS(ON) ID (at VGS=10V) 240A • Optimized for High Reliable Switch Application RDS(ON) (at VGS=10V, typ) 0.96mΩ • High Current Capability RDS(ON) (at VGS=4.5V, typ) 1.25mΩ • RoHS and Halogen-Free Compliant Applications • Motor Drive 100% UIS Tested • Load Switch 100% RG Tested • Battery Protection • General DC/DC Converters D DFN5X6 Top View Bottom View S S S G G 1 8 2 7 3 6 4 5 D D D D PIN1 S Orderable Part Number Package Type Form Minimum Order Quantity VIS30010 DFN 5×6 Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (5) 30 V VGS ±20 V IDM TA=25°C IDSM TA=100°C IAS Avalanche Energy L=0.1mH Power Dissipation (1) VDS ID TC=100°C Avalanche Current (3) Power Dissipation (2) Units TC=25°C Pulsed Drain Current (3) Continuous Drain Current Maximum (3) EAS TC=25°C PD TC=100°C TA=25°C PDSM TA=100°C Junction and Storage Temperature Range TJ, TSTG 240 A 150 A 646 A 68 A 54 A 85 361 A mJ 104 W 41 W 8 W 5.1 W °C -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient Symbol (1) t ≤ 10s Maximum Junction-to-Ambient (1,4) Steady-State Maximum Junction-to-Case Steady-State Rev0.91 (10/2020) RθJA RθJC Typ Max Units 13 15.6 °C/W 34 41 °C/W 0.95 1.2 °C/W Voltaic Semiconductor Confidential and Proprietary Information 1 VIS30010 30V N-Channel Power Trench MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA V VDS=30V, VGS=0V 1 TJ=55°C VGS=10V, ID=20A RDS(ON) 30 Static Drain-Source On-Resistance TJ=125° VGS=4.5V, ID=20A 5 1.4 μA ±100 nA 1.8 2.2 V 0.96 1.15 1.33 1.25 mΩ 1.50 gFS Forward Transconductance VDS=5V, ID=20A 140 S VSD Diode Forward Voltage IS=1A, VGS=0V 0.66 V IS Maximum Body-Diode Continuous Current 110 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz f=1MHz 10354 pF 1414 pF 857 pF 2.0 Ω 180.2 nC 89.6 nC 34.7 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge VGS=10V, VDS=15V, ID=20A Qgd Gate Drain Charge 35.1 nC tD(on) Turn-On DelayTime 17.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 11.2 ns 136.4 ns tf Turn-Off Fall Time 25.8 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=200A/μs 37.5 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=200A/μs 37.6 nC 1) 2) 3) 4) 5) 2 RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. Single pulse width limited by junction temperature TJ(MAX)=150°C. RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. The maximum current rating is package limited. Rev0.91 (10/2020) Voltaic Semiconductor Confidential and Proprietary Information 2 VIS30010 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250.00 250 VDS=5V 4.5V 200.00 200 10V ID (A) 150 ID (A) 150.00 100.00 TJ=150°C 100 3V TJ=25°C 50.00 50 VGS=2.5V 0.00 0 0.00 1.00 2.00 3.00 4.00 5.00 0.0 1.0 2.0 VDS (V) Fig 1. Typical Output Characteristics 4.0 5.0 Fig 2. Typical Transfer Characteristics 1.6 14000 1.5 12000 Ciss 1.4 Capacitance (pF) Normalized On-Resistance 3.0 VGS (V) VGS=4.5V ID=20A 1.3 1.2 1.1 VGS=10V ID=20A 1 10000 8000 6000 Coss Crss 4000 2000 0.9 0.8 0 0 25 50 75 100 125 150 0 5 10 TJ, Junction Temperature (℃) 15 20 25 30 1 1.2 VDS (V) Fig 3. Normalized On-Resistance vs. Temperature Fig 4. Typical Capacitance vs. VDS 10 1000 9 8 100 TJ=150°C 6 IS(A) VGS(V) 7 5 TJ=25°C 10 4 3 1 2 1 0 0.1 0 40 80 120 160 200 0 0.2 0.4 Qg(nC) Fig 5. Typical Gate Charge vs. VGS Rev0.91 (10/2020) 0.6 0.8 VSD(V) Fig 6. Typical Source-Drain Diode Forward Voltage Voltaic Semiconductor Confidential and Proprietary Information 3 VIS30010 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 300 10μs 250 RDS(ON) limited 100μs 1ms 10 TJ(MAX)=150℃ TC=25℃ DC 10ms 1 Current Rating ID (A) ID (A) 100 200 150 100 50 0 0.1 0.01 0.1 1 10 0 100 25 50 Fig 7. Maximum Safe Operating Area ZθJC Normalized Transient Thermal Resistance 100 125 150 Fig 8. Maximum Drain Current vs. Case Temperature 10 1 75 TCASE (℃) VDS(V) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJC∙RθJC RθJC=1.2℃/W 0.1 PD 0.01 TON T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Case ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, 0.005, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJA∙RθJA RθJA=42℃/W 1 0.1 PD 0.01 TON T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Fig 10. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Rev0.91 (10/2020) Voltaic Semiconductor Confidential and Proprietary Information 4 VIS30010 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10000 TJ(MAX)=150℃ TC=25℃ 1000 Power (W) Power (W) 800 TJ(MAX)=150℃ TA=25℃ 600 400 100 10 200 0 0.0001 0.001 0.01 0.1 1 1 0.00001 10 0.001 Pulse Width (s) 0.1 10 1000 Pulse Width (s) Fig 11. Single Pulse Power Rating Junction-to-Case Fig 12. Single Pulse Power Rating Junction-to-Ambient 120 5 ID=20A 4 80 RDSON (mΩ) Power Dissipation (W) 100 60 40 3 2 125℃ 1 20 25℃ 0 0 0 25 50 75 100 125 150 TCASE (℃) 2.0 4.0 6.0 8.0 10.0 VGS (V) Fig 13. Maximum Power Rating vs. Temperature Fig 14. On-Resistance vs. VGS 2.50 RDSON (mΩ) 2.00 VGS=4.5V 1.50 1.00 VGS=10V 0.50 0.00 0 5 10 15 20 25 30 ID (A) Fig 15. On-Resistance vs. Drain Current Rev0.91 (10/2020) Voltaic Semiconductor Confidential and Proprietary Information 5 VIS30010 30V N-Channel Power Trench MOSFET TEST CIRCUIT BV DSS VDS L IAS + VDD DUT IAS Fig16. Unclamped Inductive Test Circuit Fig17. Unclamped Inductive Waveform VDS Qg VGS 10V L DUT VCC Qgs Fig18. Qg Test Circuit Qgd Fig19. Qg Waveform RL VDS 90% + VGS RG DUT VDD 10% tr td (o n ) td (o ff) to n Fig18. Resistive Switching Test Circuit Rev0.91 (10/2020) tf to ff Fig19. Switching Time Waveform Voltaic Semiconductor Confidential and Proprietary Information 6 VIS30010 30V N-Channel Power Trench MOSFET TEST CIRCUIT VDS+ VG S DUT VDS- L ISD ISD + VGS VDD IF dI/ dt trr VD D VD S Fig20. Diode Recovery Test Circuit Fig21. Diode Recovery Test Waveform L1 D1 A C DFN5×6 OUTLINE E4 H D2 e b L K Rev0.91 (10/2020) DIM SYMBOL A b C D1 D2 e E1 E2 E4 H K L L1 MILLIMITERS MIN [mm] MAX [mm] 0.900 1.000 0.350 0.450 0.254 REF 4.824 4.976 3.910 4.110 1.270 TYP 6.126 5.974 5.826 5.674 3.375 3.575 0.574 0.726 1.190 1.390 0.559 0.711 0 0.120 Voltaic Semiconductor Confidential and Proprietary Information 7