SFS06R06PF

SFS06R06PF Enhancement Mode N-Channel Power MOSFET General Description ® FSMOS MOSFET is based on Oriental Semiconductor’s unique device design to achieve low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. The low Vth series is specially designed to use in synchronous rectification power systems with low driving voltage. Features  Low RDS(ON) & FOM  Extremely low switching loss  Excellent reliability and uniformity  Fast switching and soft recovery Applications  PD charger  Motor driver  Switching voltage regulator  DC-DC convertor  Switched mode power supply Key Performance Parameters Parameter Value Unit VDS, min @ Tj(max) 60 V ID, pulse 210 A RDS(ON) max @ VGS=10V 6 mΩ Qg 30 nC Marking Information Product Name Package Marking SFS06R06PF TO220 SFS06R06P Package & Pin information Oriental Semiconductor © Copyright Reserved V2.0 Page.1 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Absolute Maximum Ratings at Tj=25°C unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 60 V Gate source voltage VGS ±20 V ID 70 A ID, pulse 210 A IS 70 A IS, Pulse 210 A PD 87 W EAS 66 mJ Tstg，Tj -55 to 150 °C 1) Continuous drain current , TC=25 °C 2) Pulsed drain current , TC=25 °C 1) Continuous diode forward current , TC=25 °C 2) Diode pulsed current , TC=25 °C 3) Power dissipation , TC=25 °C 5) Single pulsed avalanche energy Operation and storage temperature Thermal Characteristics Parameter Thermal resistance, junction-case Thermal resistance, junction-ambient 4) Symbol Value Unit RθJC 1.44 °C/W RθJA 62 °C/W Electrical Characteristics at Tj=25°C unless otherwise specified Parameter Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance Drain-source on-state resistance Symbol Min. BVDSS 60 VGS(th) 1.0 Typ. Max. Unit Test condition V VGS=0 V, ID=250 μA 2.5 V VDS=VGS, ID=250 μA RDS(ON) 4.7 6 mΩ VGS=10 V, ID=20 A RDS(ON) 6.4 10 mΩ VGS=4.5 V, ID=10 A 100 Gate-source leakage current IGSS Drain-source leakage current IDSS Gate resistance RG VGS=20 V nA -100 Oriental Semiconductor © Copyright Reserved V2.0 1 2.8 VGS=-20 V μA VDS=60 V, VGS=0 V Ω ƒ=1 MHz, Open drain Page.2 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Input capacitance Ciss 2136 pF Output capacitance Coss 332 pF Reverse transfer capacitance Crss 10.6 pF Turn-on delay time td(on) 22.9 ns tr 6.5 ns td(off) 45.7 ns tf 20.4 ns Rise time Turn-off delay time Fall time Test condition VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, VDS=50 V, RG=2 Ω, ID=25 A Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Total gate charge Qg 30 nC Gate-source charge Qgs 5.8 nC Gate-drain charge Qgd 6.1 nC Vplateau 3.6 V Gate plateau voltage Test condition VGS=10 V, VDS=50 V, ID=25 A Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit 1.3 V Diode forward voltage VSD Reverse recovery time trr 50.3 ns Reverse recovery charge Qrr 45.1 nC Peak reverse recovery current Irrm 1.5 A Test condition IS=20 A, VGS=0 V VR=50 V, IS=25 A, di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature, using junction-case thermal resistance. 4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 °C. 5) VDD=30 V,VGS=10 V, L=0.3 mH, starting Tj=25 °C. Oriental Semiconductor © Copyright Reserved V2.0 Page.3 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Electrical Characteristics Diagrams 1000 350 Tj = 25 ℃ VDS= 10 V VGS= 10 V Tj = 25 ℃ 100 250 VGS= 6 V 200 VGS= 5.5 V 150 VGS=5 V VGS= 4.5 V 100 10 1 VGS= 4 V 50 0 ID, Drain current(A) ID, Drain current (A) 300 VGS= 3.5 V 0 2 4 6 8 0.1 10 2 4 Figure 1. Typ. output characteristics 10 4 ID = 25 A VGS, Gate-source voltage(V) C, Capacitance (pF) 10 10 10 3 Coss 10 8 Figure 2. Typ. transfer characteristics Ciss 10 6 VGS, Gate-source voltage(V) VDS, Drain-source voltage (V) 2 Crss 1 f = 100 kHz VDS = 50 V 8 6 4 2 VGS = 0 V 10 0 10 20 30 40 50 0 60 0 5 10 Figure 3. Typ. capacitances 25 30 35 9.0m ID = 250 μA 8.0m VGS = 0 V RDS(ON), On-resistance(Ω) BVDSS, Drain-source breakdown voltage (V) 20 Figure 4. Typ. gate charge 74 72 15 Qg, Gate charge(nC) VDS, Drain-source voltage (V) 70 68 66 ID =20 A VGS = 10 V 7.0m 6.0m 5.0m 4.0m 3.0m 2.0m 64 -50 0 50 100 150 Tj, Junction temperature (℃) Figure 5. Drain-source breakdown voltage Oriental Semiconductor © Copyright Reserved V2.0 -50 0 50 100 150 Tj, Junction Temperature (℃) Figure 6. Drain-source on-state resistance Page.4 SFS06R06PF Enhancement Mode N-Channel Power MOSFET 2.4 100 2.0 IS, Source current (A) Vth, Threshold voltage (V) Tj = 25 ℃ ID = 250 μA 2.2 1.8 1.6 1.4 10 1 1.2 1.0 0.1 -50 0 50 100 150 0.5 1.0 1.5 2.0 VSD, Source-Drain voltage (V) Tj, Junction Temperature (℃) Figure 7. Threshold voltage Figure 8. Forward characteristic of body diode 80 30.0m 70 25.0m VGS=4 V 4.5 V 5V 5.5 V 6 V 6.5 V 7 V 10 V 15.0m 10.0m ID, Drain current (A) RDS(ON), On-resistance(Ω) 60 20.0m 50 40 30 20 5.0m 10 0.0 50 100 150 200 250 300 0 350 0 20 40 60 80 100 120 140 TC, Case Temperature (℃) ID, Drain current(A) Figure 9. Drain-source on-state resistance Figure 10. Drain current 101 ID, Drain current(A) 100 10 μs 100 μs RDS(ON) Limited 10 1 ms 10 ms DC 1 zthjc Thermal Response(K/W) 1000 D= tp/T D= 1 100 0.5 0.2 0.1 0.05 10-1 0.02 0.01 Single Pulse 0.1 0.1 1 10 100 VDS, Drain-source voltage(V) Figure 11. Safe operation area TC=25 °C Oriental Semiconductor © Copyright Reserved V2.0 10-2 10-5 10-4 10-3 10-2 10-1 100 tp Pulse width(s) Figure 12. Max. transient thermal impedance Page.5 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Test circuits and waveforms Figure 1. Gate charge test circuit & waveform Figure 2. Switching time test circuit & waveforms Figure 3. Unclamped inductive switching (UIS) test circuit & waveforms Figure 4. Diode reverse recovery test circuit & waveforms Oriental Semiconductor © Copyright Reserved V2.0 Page.6 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Package Information A E D1 L2 D D2 θ1 H1 ΦP (E) H1 Q A1 θ1 L1 θ1 E1 L PIN#1 b1 b e e1 A2 C θ1 θ1 (E) Symbol A A1 A2 b b1 c D D1 D2 E E1 e e1 H1 L L1 L2 ΦP Q θ1 Min 4.40 1.27 2.30 0.70 1.27 0.45 15.30 9.10 13.10 9.70 7.80 6.30 12.78 3.55 2.73 1˚ mm Nom 4.50 1.30 2.40 0.50 15.70 9.20 9.90 8.00 2.54 BSC 5.08 BSC 6.50 13.08 4.60 REF 3.60 3˚ Max 4.60 1.33 2.50 0.90 1.40 0.60 16.10 9.30 13.70 10.20 8.20 6.70 13.38 3.50 3.65 2.87 5˚ Version 1: TO220-J package outline dimension Oriental Semiconductor © Copyright Reserved V2.0 Page.7 SFS06R06PF Enhancement Mode N-Channel Power MOSFET Ordering Information Package Type Units/ Tube Tubes / Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TO220-J 50 20 1000 5 5000 Product Information Product Package Pb Free RoHS Halogen Free SFS06R06PF TO220 yes yes yes Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com). © Oriental Semiconductor Co.,Ltd. All Rights Reserved Oriental Semiconductor © Copyright Reserved V2.0 Page.8