Semitel
Ultra Low Capacitance ESD/Transient Protection Diode
Enabling your idea
Features
SESUC5VD882SY-2B
■ 60Watts peak pulse power (tp = 8/20μs)
■ SOD-882 Package
■ Bidirectional configurations
■ R2R + Zener technology
■ Low clamping voltage
■ Low leakage current
■ Ultra low capacitance (Cj=0.3pF typ.)
■ Protection one data/power line to:
IEC 61000-4-2 ±10kV contact ±15kV air
SOD-882
IEC 61000-4-4 (EFT) 40A (5/50ns)
Ultra Low Capacitance ESD/Transient Protection Diode
IEC 61000-4-5 (Lightning) 3A (8/20μs)
■ RoHS compliant
Applications
■ USB3.0, Firewire, DVI, HDMI, S-ATA
■ Thunderbolt, Display Port
Schematic Diagram
■ Mobile HDMI Link, MDDI, MIPI, SWP / NFC
Absolute Maximum Ratings
(TA=25℃, Unless otherwise specified.)
Parameter
Symbol
Value
Unit
Peak Pulse Power (TP=8/20μS)
PPP
ESD contact/air discharge (IEC-61000-4-2)
VESD
60
10/15
W
kV
A
℃
Peak Pulse Current ( tP = 8/20μS )
IPP
Junction Temperature
TJ
3
-55 to +125
Storage temperature
TSTG
-55 to +150
℃
TL
260
℃
Maximum Lead Solder Temperature(10 second duration)
Electrical Characteristics
(TA=25℃, Unless otherwise specified.)
Parameter
Reverse stand-off Voltage
Reverse Breakdown Voltage
Symbol
Condition
Min
Typ
VRWM
VBR
IT=1mA
Reverse Leakage Current
IR
VR=5.0V
6.5
Clamping Voltage (IEC 61000-4-5)
VC
IPP=3A
Trigger Voltage (IEC 61000-4-2)
VT
VESD=8kV
Clamping Voltage (IEC 61000-4-2)
VC
VESD=8kV
20
Junction Capacitance
CJ
VR=0V, f=1MHz
0.3
Max
Unit
5.0
V
100
nA
20.5
V
8.5
5
V
135
V
V
0.35
pF
1
@copyright Semitel 2016
www.semiteltech.com
Semitel
Ultra Low Capacitance ESD/Transient Protection Diode
Enabling your idea
Typical Characteristic Curves
Fig.1 Peak Pulse Power Rating Curve
Fig.2 Pulse Derating Curve
1
% of Rated Power (PPP) or IPP
Peak Pulse Power –PPP(KW)
10
60W
0.1
1
10
100
1000
80
60
40
20
0
0
Pulse Duration tp (μs)
100
125
100%IPP , 8μS
150
100%
90%
30ns
80
50%IPP, 20μS
-t
e
60
Percent of IPP
Percent of IPP
75
Fig.4 Pulse Waveform-ESD(IEC61000-4-2)
100
40
20
0
50
Ambient Temperature—TA(℃)
Fig.3 Pulse Waveform-8/20μs
120
25
60ns
10%
0
5
10
15
20
25
30
0
30
60
Fig.5 IEC61000-4-2 +8kV Contact Discharge
Fig.6 IEC61000-4-2 -8kV Contact Discharge
Trigger and Clamping Voltage(V)
Time (ns)
Trigger and Clamping Voltage(V)
Time (μs)
tr 0.7 to 1ns
Time (ns)
Ultra Low Capacitance ESD/Transient Protection Diode
0.01
0.1
110
100
Time (ns)
2
@copyright Semitel 2016
www.semiteltech.com
Semitel
Ultra Low Capacitance ESD/Transient Protection Diode
Enabling your idea
Product Dimensions
Unit: mm
P
Order Information
Device
SESUC5VD882SY-2B
Package
Carrier
Quantity
HSF Status
SOD-882
Tape & Reel(7")
10,000pcs/reel
RoHS compliant
Revision history
Date
Revision
Description of changes
22-April-2016
A0
First issue
Ultra Low Capacitance ESD/Transient Protection Diode
Marking
3
@copyright Semitel 2016
www.semiteltech.com
Semitel
Ultra Low Capacitance ESD/Transient Protection Diode
Enabling your idea
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Ultra Low Capacitance ESD/Transient Protection Diode
CAUTION / WARNING
· Information in this document is believed to be accurate and reliable. However, SEMITEL does not give any representations or warranties, expressed
· Resale of SEMITEL products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by SEMITEL for the SEMITEL product or service described herein and shall not create or extend in any manner whatsoever, any
liability of SEMITEL.
· SEMITEL expressly disclaims all implied warranties regarding the information contained herein, including, but not limited to, any implied warranties
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in no case will SEMITEL be liable for any incidental, indirect, or consequential damages arising from the sale, resale, use, or misuse of its products.
Specifications are subject to change without notice
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. ® is a registered trademark of Semitel Electronics
All rights reserved
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@copyright Semitel 2016
www.semiteltech.com
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