VIS30019A

VIS30019 30V N-Channel Power Trench MOSFET General Description Product Summary VDS • Trench Power MOSFET Technology • Low RDS(ON) 30V 150A 1.7mΩ 2.1mΩ ID (at VGS=10V) RDS(ON) (at VGS=10V, typ) RDS(ON) (at VGS=4.5V, typ) • Optimized for High Reliable Switch Application • High Current Capability • RoHS and Halogen-Free Compliant Applications 100% UIS Tested 100% RG Tested • Motor Drive • Load Switch • Battery Protection • General DC/DC Converters D DFN5X6 Top View G S S S S 1 8 D 2 7 3 6 D D G 4 5 D Bottom View PIN1 Orderable Part Number Package Type Form Minimum Order Quantity VIS30019 DFN 5×6 Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain TC=100°C Current (5) (3) ID Pulsed Drain Current TA=25°C Continuous Drain Current TA=70°C IDM Avalanche Current (3) (3) Avalanche energy L=0.1mH TC=25°C Power Dissipation (2) TC=100°C TA=25°C Power Dissipation (1) TA=70°C Junction and Storage Temperature Range IAS EAS Thermal Characteristics Parameter Maximum Junction-to-Ambient (1) t ≤ 10s Maximum Junction-to-Ambient (1,4) Steady-State Steady-State Maximum Junction-to-Case Rev 0.2 (07/2019) Maximum 30 ±20 150 104 288 51 41 65 211 83.3 33.3 8 5.1 -55 to 150 Symbol VDS VGS IDSM PD PDSM TJ, TSTG Symbol RθJA RθJC Typ 13 35 1.2 Units V V A A A mJ W W °C Max 15.6 42 1.5 Voltaic Semiconductor Confidential and Proprietary Information Units °C/W °C/W °C/W 1 VIS30019 30V N-Channel Power Trench MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250mA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1 5 1.4 VGS=10V, ID=20A TJ=125°C ±100 nA 2.2 V 1.7 2.1 mΩ 2.6 mΩ 2.5 2.1 120 0.69 gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current 5969 VGS=0V, VDS=15V, f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S V 110 DYNAMIC PARAMETERS Ciss Input Capacitance μA 1.8 VGS=4.5V, ID=20A VDS=5V, ID=20A Units V TJ=55°C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ A pF 805 pF 442 pF 0.7 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 104 nC Qg(4.5V) Total Gate Charge 51 nC Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 18 nC tD(on) Turn-On DelayTime 8.6 ns tr Turn-On Rise Time 9.6 ns tD(off) Turn-Off DelayTime 58.4 ns tf Turn-Off Fall Time 22.8 ns trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/ms 28.7 ns Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/ms 19.5 nC f=1MHz VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75W, RGEN=3W 1) RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. 2) The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 3) Single pulse width limited by junction temperature TJ(MAX)=150°C. 4) RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. 5) The maximum current rating is package limited. Rev 0.2 (07/2019) Voltaic Semiconductor Confidential and Proprietary Information 2 VIS30019 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 250 10V 160 150 ID (A) ID (A) VDS=5V 4.5V 200 100 3V 50 120 TJ=150℃ 80 TJ=25℃ 40 VGS=2.5V 0 0 1 2 3 4 0 5 0.0 1.0 2.0 VDS (V) 5.0 Fig 2. Typical Transfer Characteristics 10000 1.6 1.5 8000 1.4 Capacitance (pF) Normalized On-Resistance 4.0 VGS (V) Fig 1. Typical Output Characteristics VGS=10V ID=20A 1.3 1.2 1.1 VGS=4.5V ID=20A 1 0.9 3.0 0 25 50 75 100 125 Ciss 6000 4000 Coss 2000 0 150 Crss 0 5 10 TJ, Junction Temperature (℃) 15 20 25 30 VDS (V) Fig 3. Normalized On-Resistance vs. Temperature Fig 4. Typical Capacitance vs. VDS 10 1000 9 8 100 6 IS (A) VGS (V) 7 5 4 TJ=150℃ 10 TJ=25℃ 3 1 2 1 0 0 20 40 60 80 100 Qg (nC) Fig 5. Typical Gate Charge vs. VGS Rev 0.2 (07/2019) 120 0.1 0 0.2 0.4 0.6 0.8 1 1.2 VSD (V) Fig 6. Typical Sourse-Drain Diode Forward Voltage Voltaic Semiconductor Confidential and Proprietary Information 3 VIS30019 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 160 ID (A) 100 10μs 100μs 10 DC 1ms 10ms 1 0.1 Current Rating ID (A) 140 RDS(ON) limited 120 100 TJ(MAX)=150℃ TC=25℃ 80 60 40 20 0 0.01 0.1 1 10 100 0 25 50 75 100 125 150 TCASE (℃) VDS (V) Fig 7. Maximum Safe Operating Area Fig 8. Maximum Drain Current vs. Case Temperature ZθJC Normalized Transient ThermalResistance 10 D=Ton/T TJ,PK=TC+PDM∙ZθJC∙RθJC RθJC=1.5℃/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Single Pulse 0.1 PD TON T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Case ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM∙ZθJA∙RθJA RθJA=42℃/W 1 0.1 PD Single Pulse 0.01 TON T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Fig 10. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient Rev 0.2 (07/2019) Voltaic Semiconductor Confidential and Proprietary Information 4 VIS30019 30V N-Channel Power Trench MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 320 280 240 1000 200 Power (W) Power (W) TA=25℃ TJ(MAX)=150℃ TC=25℃ 160 120 100 10 80 40 0 0.0001 0.001 0.01 0.1 1 1 0.00001 10 0.001 Pulse Width (s) 0.1 10 Pulse Width (s) Fig 11. Single Pulse Power Rating Junction-to-Case Fig 12. Single Pulse Power Rating Junction-to-Ambient 90 5 ID=20A 4 70 60 RDSON (mΩ) Power Dissipation (W) 80 50 40 30 20 3 125℃ 2 25℃ 1 10 0 1000 0 25 50 75 100 125 150 TCASE (℃) 0 2 4 6 8 10 VGS (Volts) Fig 13. Maximum Power Rating vs. Temperature Fig 14. Maximum Power Rating vs. VGS 4.0 3.5 RDSON (mΩ) 3.0 2.5 VGS=4.5V 2.0 1.5 VGS=10V 1.0 0.5 0.0 0 5 10 15 20 25 30 ID (A) Fig 15. On-Resistance vs. Drain Current Rev 0.2 (07/2019) Voltaic Semiconductor Confidential and Proprietary Information 5 VIS30019 30V N-Channel Power Trench MOSFET TEST CIRCUIT VDS L BV DSS IAS + VDD DUT IAS Fig16. Unclamped Inductive Test Circuit Fig17. Unclamped Inductive Waveform VDS Qg VGS 10V L DUT VCC Qgs Fig18. Qg Test Circuit Qgd Fig19. Qg Waveform RL VDS 90% + VGS RG DUT VDD 10% tr T d-o n ton Fig18. Resistive Switching Test Circuit Rev 0.2 (07/2019) tf T d-o ff toff Fig19. Switching Time Waveform Voltaic Semiconductor Confidential and Proprietary Information 6 VIS30019 30V N-Channel Power Trench MOSFET TEST CIRCUIT VDS+ VG S DUT VDS- L ISD ISD + VGS VDD IF dI/ dt trr VD D VD S Fig20. Diode Recovery Test Circuit Fig21. Diode Recovery Test Waveform D1 A C DFN5×6 OUTLINE L1 DIM SYMBOL E4 H D2 e b L K Rev 0.2 (07/2019) A b C D1 D2 e E1 E2 E4 H K L L1 MILLIMITERS MIN [mm] MAX [mm] 1.0 1.2 0.3 0.5 0.23 0.27 5.0 5.4 3.8 4.25 1.17 1.37 5.95 6.35 5.66 6.06 3.92 3.52 0.4 0.6 1.15 1.45 0.3 0.7 0 0.12 Voltaic Semiconductor Confidential and Proprietary Information 7