MXDLN02G

MXDLN02G FM Low Noise Amplifier ED V APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Features General Description MXDLN02G low current, high gain, low noise amplifier (LNA) is dedicated to FM receive. This product achieved excellent noise figure of 0.9dB and 20dB gain. MXDLN02G works under a 1.6V to 3.3V single power supply while consumes 10 mA current, in power down (PD) mode, the power consumption will be reduced to less than 0.1uA.  Low noise figure: 0.9 dB  High gain: 20dB  PD current less than 0.1uA  Single supply voltage range 1.6V to 3.3V  Small package 1.0mmx1.5mmx0.75mm  Low cost BOM  Lead-Free and RoHS-Compliant MXDLN02G uses a small 1.0mmx1.5mmx0.75mm DFN 6-pin package. Applications Cell Phone with FM Portable audio device Pin Configuration and function block diagram (Top view) VDD 1 6 RFIN 5 EN 4 GND Power detect and clamping NC 2 LNA Enhanced EOS protect RFOUT 3 MXDLN02G Figure 1 MXDLN02G pin configuration and function block diagram Page 2 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Application circuit Application A: Internal antenna; Application B: Separated antenna, matching to 50 Ohm. Set LNA to off FM earphone state by using earphone antenna 22pF 4 GSM ANT Feed Point 47nF GSM ANT GND Point 5 1.6~VDD FM Receiver EN 2 NC Enable 68nH 33nH 68nH VDD Decouple capacitor close to LNA 47nF 6 RFIN 1 VDD 100nH GND feed point needs copper keepout and close to ANT GND feed point GSM 47nF FM receive input match (optional) MXDLN02G FM 39pF 3 RFOUT GND 120nH 47nF Reject GSM signal and impedance match 68nH To GSM circuit、match 39pF Filter FM signal and close to antenna feed point Figure 2 Application A: Internal antenna sharing with GSM 4 GND RFOUT 3 47nF FM receiver input match (optional) FM Receiver MXDLN02G FM antenna 5 1.6~VDD EN NC 2 Enable 100nH 47nF 6 RFIN VDD 1 VDD Decouple capacitor close to LNA 47nF NC LNA input matach Figure 3 Application B: Separated antenna, matching to 50 Ohm Page 3 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Pin Descriptions Table 1. Pin Descriptions Pin 1 2 3 4 5 6 Pin Name I/O Pin Description VDD AP Power supply NC RFOUT AO LNA output GND AG Analog VSS EN DI Pull high enable, pull low into power down mode RFIN AI LNA input from antenna Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground) Absolute Maximum Ratings Table 2. Parameters Power supply Other Pin to GND Maximum RF Input Power Operation Temperature Range Junction Temperature Storage temperature Range Lead Temperature (soldering) Soldering Temperature (reflow) Human Body Mode ESD Charge Device Mode ESD Range -0.3 ~ 3.8 -0.3~VDD+0.3 25 -40~85 150 -65~160 260 260 -6000~+6000 -500~+500 Units V V dBm ℃ ℃ ℃ ℃ ℃ V V Specifications DC Characteristics Typically TA=25℃ VDD=2.8V, VEN=1.8V, unless otherwise noted Table 3. Parameters Supply Voltage Supply Current EN Input High EN Input Low Condition EN=High, VDD=2.8V Min 1.6 8 1.6 0 Typ 2.8 10 1.8 0 Max 3.3 13 VDD 0.3 Units V mA V V Page 4 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA AC Characteristics Typically TA=25℃ VDD=2.8V, VEN=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted Table 4. AC Specifications, no any matching network, 50 Ohm port Parameters RF Frequency Range Operation Current Power Down Current Power Gain Input Power 1-dB Compression Point Noise Figure Input Return Loss Output Return Loss Reverse Isolation Stability Conditions Note1 Note1 Note1 Note1 Note1 Note1 Min 50 8 18 -20 -4.5 -10 1.3 Typ 10 0.05 20 -17 0.9 -3.5 -9 -32 - Max 150 13 0.1 22 1.2 -3.0 -5 -28 - Units MHz mA μA dB dBm dB dB dB dB N/A Note1: measuring at 50 Ohm load Figure 4 Power Gain & Input/output return loss Figure 5 Noise Figure & Stability factor Page 5 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Figure 6 Reverse isolation & Smith chart Figure 7 Gain curve over input power Page 6 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Package Outline Dimensions ccc C A A aaa C D A2 * CONTROLLING bbb C A3 E A1 B LASER MARK FOR PIN1 IDENTIFICATION IN THIS AREA SEATING PLANE SYMBOL A A1 A2 A3 b D D2 E E2 L e DIMENSION : MM MILLIMETER INCH MIN. NOR. MAX. MIN. NOR. 0.70 0.75 0.80 0.028 0.030 －－－ －－－ 0.05 －－－ －－－ 0.50 0.55 0.60 0.020 0.022 0.20 REF 0.008 REF 0.17 0.20 0.23 0.007 0.008 1.50 bsc 0.060 bsc 0.87 0.90 0.96 0.033 0.035 1.00 bsc 0.040 bsc 1.15 1.20 1.25 0.046 0.048 0.25 0.30 0.35 0.010 0.012 0.50 bsc 0.020 bsc TOLERANCES OF FORM AND POSITION aaa 0.10 0.004 bbb 0.10 0.004 ccc 0.05 0.002 MAX. 0.032 0.002 0.024 0.009 0.037 0.050 0.014 C 0.10 M C A B SIDE VIEW b 0.075 D2 L 0.075 e PIN1 ID E2 Figure 8 MXDLN02G outline dimension Page 7 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN02G FM LNA Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 9 Recommended Lead-Free Reflow Profile Table 5. Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 0.5.1 Page 8 of 8 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential