MXDLN16TP

MXDLN16TP SiGe Low Noise Amplifier for Global Navigation Satellite System (GNSS) VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS General Description Features MXDLN16TP high gain, low noise amplifier (LNA) is dedicated to GPS, GLONASS Galileo and Beidou standards. This product has an extremely low noise figure of 0.5dB, 18dB gain and excellent linearity. MXDLN16TP works under a 1.6V to 3.6V single power supply while consumes 3 mA current, in power down (PD) mode, the power consumption will be reduced to less than 1uA. MXDLN16TP uses a small 1.1mm x 0.7mm x 0.45mm LGA 6-pin package.  High Gain: 18dB  Low noise figure 0.5dB @ 1575.42MHz  Low operation current 3mA & PD current less than 1uA  Single supply voltage range 1.6V to 3.6V  Small package 1.1mmx0.7mmx0.45mm ， MSL1  240GHz transit frequency - SiGe technology  Low cost BOM  Lead-Free and RoHS-Compliant Applications Automotive Navigation Personal Navigation Device (PND) Cell Phone with GPS MID/PAD with GPS Pin Configuration/Application Diagram (Top view) GND 4 3 RFOUT RF output VDD MXDLN16TP RF input L1 RFIN 5 2 VDD 1nF Enable EN 6 1 GND Figure 1.MXDLN16TP application circuit Table 1. Component L1 Vendor Type Part Number & value Murata Wired inductor, high Q LQW15AN7N3, 7.3nH various Ceramic inductor, low Q 6.8nH Page 2 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS Absolute Maximum Ratings Table 2. Parameters Power supply Other Pin to GND Maximum RF Input Power Operation Temperature Range Junction Temperature Storage temperature Range Lead Temperature (soldering) Soldering Temperature (reflow) Human Body Mode ESD Machine Mode ESD Charge Device Mode ESD Range -0.3 ~ 4.0 -0.3~VDD+0.3 20 -40~90 150 -65~160 260 260 -2000~+2000 -150~+150 -500~+500 Units V V dBm ℃ ℃ ℃ ℃ ℃ V V V Specifications DC Characteristics TA=-40~+90℃, Typically TA=25℃ VDD=2.8V, unless otherwise noted Table 3. Parameters Supply Voltage Supply Current EN Input High EN Input Low Condition VDD=1.6~3.6V EN=High, EN=Low Min 1.6 Typ 2.8 Max 3.6 Units V 2.5 3.0 4.3 mA 0 1.0 0 0.01 1.8 0 1 VDD 0.3 uA V V Page 3 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS AC Characteristics TA=-40~+90℃, typically TA=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted Table 4. Parameters RF Frequency Range Conditions None Power Gain Note6 Noise Figure Note6 Note1 Note6 Note1 Note6 Note1 Note2 Note3 Input Return Loss Output Return Loss Reverse Isolation Desense Stability Input Power 1-dB Compression Point Input In-Band IP3 Input Out-Band IP3 1575MHz Note4 Note5 Min 16.5 16.5 1.5 Typ 1575.42 18 18 0.5 0.55 -10 -10 -10 -12 -27 0.25 - -10 -7 1 6 -3 2 Max 19.5 19.5 1 1.05 Units MHz dB dB -8 -8 -8 -8 -22 0.5 - dBm - dBm dBm dB dB dB dB TA=-40~+90℃, typically TA=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted Table 5. Parameters RF Frequency Range Conditions None Power Gain Note6 Noise Figure Input Return Loss Output Return Loss Reverse Isolation Desense Stability Input Power 1-dB Compression Point Input In-Band IP3 Input Out-Band IP3 Note6 Note1 Note6 Note1 Note6 Note1 Note2 Note3 1575MHz Note4 Note5 Min 16.5 16.5 1.5 Typ 1575.42 18 18 0.5 0.55 -10 -10 -10 -12 -27 0.25 - Max 19.5 19.5 1 1.05 -12 -9 -1 4 - dBm - dBm dBm -5 0 -8 -6 -8 -8 -22 0.5 - Units MHz dB dB dB dB dB dB Note1: sweep power -30dBm, 1575.42MHz Note2: jammed signal @ 1463MHz & 1712MHz, -20dBm Note3: frequency range 500MHz-5GHz Note4: f1 = 1574.5 MHz, f2 = 1575.5 MHz, -30dBm Note5: f1 = 1712.7 MHz, -20dBm, f2 = 1850 MHz, -65dBm, IP3=（2*P1+P2+ Gain1575MHz -IM3)/2 Note6: Beidou frequency range B1：1559.052MHz---1591.788MHz Page 4 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS Pin Descriptions Table 6. Pin Pin Name I/O Pin Description 1 GND AG Analog VSS 2 VDD AP Power supply 3 RFOUT AO LNA output 4 GND AG Analog VSS 5 RFIN AI LNA input from antenna 6 EN DI Pull high enable, pull low into power down mode Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground), Outline Dimensions aaa C A D ccc C A3 E A A2 SIDE VIEW aaa C LASER MARK FOR PIN1 IDENTIFICATION IN THIS AREA TOP VIEW e ALL DIMENSIONS ARE IN MILLIMETERS. 0.050 SYMBOL A A A A A B 0.050 A PIN1 ID A A2 A3 e D E aaa MILLIMETER MIN. NOR. 0.40 0.45 0.09 0.12 0.31 0.33 0.35 0.40 0.65 0.70 1.05 1.10 0.10 ccc MAX. 0.50 0.15 0.35 0.45 0.85 1.15 0.20 MIN. 0.0157 0.0035 0.0122 0.0138 0.0256 0.0413 INCH NOR. 0.0177 0.0047 0.0130 0.0157 0.0276 0.0433 0.0039 MAX. 0.0197 0.0059 0.0138 0.0177 0.0295 0.0453 0.0079 BOTTOM VIEW 0.1±0.035 0.2±0.035 B 0.2±0.035 0.1±0.035 0.2±0.035 A 0.2±0.035 Figure 2. MXDLN16TP outline dimension Page 5 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS Marking Specification Pin 1 Point st 1 letter: Product Code. last letter(Variable): Can be Z, B. Lot Code From 1~9 and A ~Z excluding letter "I" and "O" for each letter Figure 3． Marking specification (Top View) Tape and Reel Dimensions Figure 4. Tape and reel dimensions Page 6 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXDLN16TP Low Noise Amplifier for GNSS Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 5. Recommended Lead-Free Reflow Profile Table 7. Profile Parameter Lead-Free Assembly,Convection,IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.1.1 Page 7 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential