MXDLN16TL
VED
APPRO
SiGe LNA for Global Navigation Satellite System (GNSS)
Description
Applications
MXDLN16TL high gain, low noise amplifier (LNA) is dedicated
Automotive Navigation
to GPS, GLONASS Galileo and Beidou standards. This
Personal Navigation Device (PND)
Cell Phone with GPS
MID/PAD with GPS
product has an extremely low noise figure of 0.7dB, 17dB gain
and excellent linearity.
MXDLN16TL works under a 1.6V to 3.3V single power supply
while consumes 0.8 mA current, in power down (PD) mode, the
power consumption will be reduced to less than 1uA.
Features
MXDLN16TL use a small 1.1mmx0.7mmx0.45mm LGA 6-pin
High Gain: 17dB
Low noise figure 0.7dB @ 1575.42MHz
Low operation current 0.8mA & PD current less than 1uA
Single supply voltage range 1.6V to 3.3V
Small package 1.1mmx0.7mmx0.45mm,MSL1
Low cost BOM
Lead-Free and RoHS-Compliant
package.
Page 1 / 8
MXDLN16TL Rev1.5
This document contains information that is confidential and proprietary to Maxscend Microelectronics Company, Ltd.
(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or
licensing of technology is implied by this document.
Pin Description
SiGe LNA for Global Navigation Satellite System (GNSS)
Pin Configuration/Application Diagram (Top view)
Figure 1 MXDLN16TL application circuit
Table 1 Pin Descriptions
Pin
Pin Name
I/O
Pin Description
1
GND
AG
Analog VSS
2
VDD
AP
Power supply
3
RFOUT
AO
LNA output
4
GND
AG
Analog VSS
5
RFIN
AI
LNA input from antenna
6
EN
DI
Pull high enable, pull low into power down mode
Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional),
AP (analog power), AG (analog ground),
Table 2 Recommended component value in application circuit
Component
Vendor
Type
Part Number & value
Murata
Wired inductor, high Q
LQW15AN, 15nH
Various
Ceramic
14nH
L1
Page 2 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Electrical Characteristics
SiGe LNA for Global Navigation Satellite System (GNSS)
Electrical Characteristics
Table 3 Absolute Maximum Ratings
Parameter
Symbol
Min
Max
DC Supply Voltage
VDD
-0.3
4.0
Supply Voltage For other Pin
VIO
-0.3
VDD+0.3
Max RF Input Power(RFx to GND)
PIN
-
10
dBm
Device Operating Temperature
TOP
-40
90
℃
Junction Temperature
TJun
150
-
℃
Device Storage Temperature
TSTG
-65
150
-
Lead Temperature (soldering)
TLT
260
-
Soldering Temperature (reflow)
TST
260
-
VESD(MM)
125
-
VESD(HBM)
2000
-
VESD(CDM)
1000
-
Electrostatic Discharge
Unit
V
-
V
Notice: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device
with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits
listed here may result in permanent damage to the device.
Table 4 Recommended Operating Conditions
Parameter
Operating Frequency
Symbol
MIN
TYP
MAX
Unit
F0
1559
-
1610
MHz
0.6
0.8
1.15
mA
0
0.01
1
uA
IDD
EN=High
Supply Current
IDD
EN=Low
MIPI Logic Voltage(SDATA, SCL) High
VIH
1.0
1.8
VDD
MIPI Logic Voltage(SDATA, SCL) Low
VIL
0
0
0.3
V
Page 3 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Electrical Characteristics
SiGe LNA for Global Navigation Satellite System (GNSS)
AC Characteristics
TA=-40~+85℃, typically TA=25℃ VDD=2.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 5 AC Characteristics(VDD=2.8V)
Parameters
Conditions
Min
Typ
Max
Units
RF Frequency Range
None
1559
-
1610
MHz
15
17
19
15
17
19
-
0.7
1.1
Note5
-
0.75
1.15
Note1
-
-8
-5
Note5
-
-8
-5
Note1
-
-20
-15
Note5
-
-20
-15
Reverse Isolation
Note1
-
-30
-24
dB
Desense
Note2
-
0.25
0.75
dB
Stability
Note3
1.5
-
-
-
Input Power 1-dB Compression Point
1575MHz
-25
-18
-
dBm
Input In-Band IP3
Note4
-13
-8
-
dBm
Power Gain
dB
Note5
Noise Figure
dB
Input Return Loss
dB
Output Return Loss
dB
Note1: sweep power -30dBm, 1575.42MHz
Note2: jammed signal @ 1463MHz & 1712MHz, -20dBm
Note3: frequency range 500MHz-5GHz
Note4: f1 = 1574.5 MHz, f2 = 1575.5 MHz, -20dBm
Note5: Beidou frequency range
B1:1559.052MHz---1591.788MHz
Page 4 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Electrical Characteristics
SiGe LNA for Global Navigation Satellite System (GNSS)
TA=-40~+85℃, typically TA=25℃ VDD=1.8V, all data measured on Maxscend’s EVB, unless otherwise noted
Table 6 AC Characteristics(VDD=1.8V)
Parameters
Conditions
Min
Typ
Max
Units
RF Frequency Range
None
1559
-
1610
MHz
14.8
16.8
18.8
14.8
16.8
18.8
-
0.7
1.1
Note5
-
0.75
1.15
Note1
-
-8
-5
Note5
-
-8
-5
Note1
-
-20
-15
Note5
-
-20
-15
Reverse Isolation
Note1
-
-30
-24
dB
Desense
Note2
-
0.25
0.75
dB
Stability
Note3
1.5
-
-
-
Input Power 1-dB Compression Point
1575MHz
-26
-19
-
dBm
Input In-Band IP3
Note4
-14
-9
-
dBm
Power Gain
dB
Note5
Noise Figure
dB
Input Return Loss
dB
Output Return Loss
dB
Note1: sweep power -30dBm, 1575.42MHz
Note2: jammed signal @ 1463MHz & 1712MHz, -20dBm
Note3: frequency range 500MHz-5GHz
Note4: f1 = 1574.5 MHz, f2 = 1575.5 MHz, -20dBm
Note5: Beidou frequency range
B1:1559.052MHz---1591.788MHz
Page 5 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Package Information
SiGe LNA for Global Navigation Satellite System (GNSS)
Package Outline Dimensions
Figure 2 Package Outline Dimensions
Page 6 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Package Information
SiGe LNA for Global Navigation Satellite System (GNSS)
Marking Specifications
Manufacture Code(Variable):
XA
Product Code(Fixed):
X
From 0~9 and A ~Z
excluding letter "I" and "O"
for lot tracking
Pin 1
Figure 3 Marking Specification (Top View)
Tape and Reel Dimensions
Figure 4 Tape and Reel Dimensions
Page 7 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential
Package Information
SiGe LNA for Global Navigation Satellite System (GNSS)
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5 Recommended Lead-Free Reflow Profile
Table 7 Reflow condition
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate(TSmax to Tp)
3℃/second max.
Preheat temperature(TSmin to TSmax)
150℃ to 200℃
Preheat time(ts)
60 - 180 seconds
Time above TL , 217℃(TL)
60 - 150 seconds
Peak temperature(Tp)
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be
used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated
diphenyl ethers (PBDE), and are considered RoHS compliant.
Page 8 / 8
MXDLN16TL: Rev1.5
Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved.
Maxscend Confidential