MXD8015LC

MXD8015LC Low Noise Amplifier for LTE Low Band VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Features General Description MXD8015LC high gain, low noise amplifier (LNA) is dedicated to LTE low band receive using advanced RFCMOS process. The high linearity performance and low noise figure makes the device an ideal choice for LTE receiving Applications.  Broadband frequency range: 716 to 960MHz  High Gain - 13 dB gain at 1.8V 716MHz to 960MHz - 0.8dB noise figure at 2.8V 716MHz to 960MHz - 1.0dB noise figure at 1.8V 716MHz to 960MHz  Operation current 5.5mA  Small, DFN (6-pin, 1.1mm x 0.7mm x Applications  15 dB gain at 2.8V 716MHz to 960MHz Low noise figure  MXD8015LC works under a 1.6V to 3.3V single power supply while consumes 5.5 mA current in low noise mode, in power down mode, the power consumption will be reduced to less than 1uA. MXD8015LC uses a small 1.1mm × 0.7mm × 0.45mm DFN 6-pin package. - 0.45mm) package，MSL1 LTE low band receiving No DC blocking capacitors required.  Pin Configuration/Application Diagram (Top view) RFin GND 4 3 RFOUT RF output VDD RF input MXD8015LC L1 RFIN 5 2 EN VDD VDD 0.1uF Enable EN 6 1 GND RFOUT Figure 1 MXD8015LC application circuit Page 2 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Pin Descriptions & Input matching inductance Table 1 Pin 1 2 3 4 5 6 Pin Name I/O Pin Description GND AG Analog VSS VDD AP Power supply RFOUT AO LNA output GND AG Analog VSS RFIN AI LNA input from antenna EN DI Pull high into low noise mode, pull low into shutdown mode Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground). Table 2 Input matching inductance Component Matching Band 716MHz – 821MHz L1 850MHz – 970MHz Vendor Type Part Number & value Murata Wired inductor, high Q LQW15AN33N, 33nH various Ceramic inductor, low Q 30nH Murata Wired inductor, high Q LQW15AN33N, 20nH various Ceramic inductor, low Q 18nH Recommended Operation Range Table 3 Parameters Operation Frequency Power supply Control Voltage High Control Voltage Low Symbol Min Typ Max Units f1 VDD VCTL_H VCTL_L 716 1.6 1.0 0 2.8 1.8 0 960 3.3 VDD 0.3 MHz V V V Absolute Maximum Ratings Table 4 Maximum ratings Parameters Symbol Minimum Maximum Supply voltage Digital control voltage RF input power Operating temperature Storage temperature Electrostatic Discharge Human body model Note1 (HBM), Class 2 Machine Model (MM), Note2 Class B Charged device model Note3 (CDM), Class III VDD VCTL PIN TOP TSTG -0.3 -0.3 +3.6 VDD+0.3, Max: 3.6 +20 +90 +150 -35 -55 ESD_HBM ESD_MM Units V V dBm ℃ ℃ 2000 - ESD_CDM 200 V 500 Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Note1: According to ESDA/JEDECJS-001-2014 Note2: Acoording to JESD22-A115C Note3: Acoording to ESDA/JEDECJS-002-2014 Page 3 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Specifications Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted Table 5 High Gain mode Electrical Specifications Parameter Symbol DC Specifications Supply voltage VDD Supply current Min. Specification Typical Max. Units Test Condition IDD 1.6 4.0 0 2.8 5.5 0.05 3.3 8.0 1 V mA uA VDD = 2.8 V, VEN=high VDD = 2.8 V, VEN=low G 13.5 15 17 dB 716 to 960MHz NF |S11| |S22| Kf 1.5 0.8 -10 -10 - 1.3 -6 -6 - dB dB dB - 716 to 960MHz 716 to 960MHz 716 to 960MHz P1dB -9 -5 - dBm 716 to 960MHz IIP3 -2 -1 2 3 - dBm - - 1 us RF Specifications Power gain Noise figure Input Return loss Output Return loss Stability factor Input 1 dB compression point Input IP3 Startup time Note1 Note2 Shutdown state to power on state Note1: Pin=Pin2=-25dBm, F1=770MHz, F2=771MHz Note2: Pin=Pin2=-25dBm, F1=900MHz, F2=901MHz Page 4 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Specifications Typically TA=25℃ VDD=1.8V, All data measured on Maxscend’s EVB, unless otherwise noted Table 6 High Gain mode Electrical Specifications Parameter Symbol DC Specifications Supply voltage VDD Supply current Min. Specification Typical Max. Units Test Condition IDD 1.6 2.5 0 1.8 3.0 0.05 3.3 5.0 1 V mA uA VDD = 1.8 V, VEN=high VDD = 1.8 V, VEN=low G 11.5 13 14.5 dB 716 to 960MHz NF |S11| |S22| Kf 1.5 -8 -7 -3 -2 1.0 -10 -10 -4 -3 1 2 1.5 -5 -6 - dB dB dB - 716 to 960MHz 716 to 960MHz 716 to 960MHz - dBm - - 1 RF Specifications Power gain Noise figure Input Return loss Output Return loss Stability factor Input 1 dB compression point Input IP3 Startup time P1dB IIP3 - dBm us 716 to 821MHz 850 to 960MHz Note1 Note2 Shutdown state to power on state Note1: Pin=Pin2=-25dBm, F1=770MHz, F2=771MHz Note2: Pin=Pin2=-25dBm, F1=900MHz, F2=901MHz Page 5 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Package Outline Dimensions Dimension Table Figure 2 MXD8015LC outline dimension Page 6 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Marking Specification Pin 1 Point st 1 letter: Product Code. last letter(Variable): Lot Code From 1~9 and A ~Z excluding letter "I" and "O" for each letter Figure 3 Marking specification (Top View) Page 7 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Tape and Reel Dimensions Figure 4 Tape and reel dimensions Page 8 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015LC LNA for LTE low band Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 5 Recommended Lead-Free Reflow Profile Table 6 Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. Page 9 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential