MXD8011H

MXD8011H LTE Low Noise Amplifier with Bypass Mode VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode Features General Description MXD8011H high gain, low noise amplifier (LNA) is dedicated to LTE middle band and high band receive. This product has two operation modes, low noise mode and bypass mode.  Frequency range from 1.8GHz to 2.7GHz  Two operation modes - Low noise mode: 14dB gain, 0.8dB noise figure at 1800MHz to 2200MHz; MXD8011H works under a 1.6V to 3.0V single power supply while consumes 7 mA current in low noise mode, in bypass mode, the power consumption will be reduced to less than 1uA. 13dB gain, 0.9dB noise figure at 2300MHz to 2700MHz - MXD8011H uses a small 1.1mmx0.7mmx0.45mm LGA 6-pin package.  Low noise mode current 7 mA & bypass mode current less than 1uA  Single supply voltage range 1.6V to 3.0V  Small package 1.1mmx0.7mmx0.45mm  Low cost BOM  Lead-Free and RoHS-Compliant Applications LTE DRX Cell Phone with LTE MID/PAD with LTE Bypass mode: 2 dB insertion loss, 15dBm input P1dB Pin Configuration/Application Diagram (Top view) RFin GND L1 4 3 RFOUT RF output V DD MXD8011H RF inp ut RFI N 5 2 EN V DD VDD 0.1uF E nabl e EN 6 1 GND RFOUT Figure 1 MXD8011H application circuit Page 2 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode Absolute Maximum Ratings Table 1. Parameters Power supply Other Pin to GND Maximum RF Input Power Operation Temperature Range Junction Temperature Storage temperature Range Lead Temperature (soldering) Soldering Temperature (reflow) Human Body Mode ESD Machine Mode ESD Charge Device Mode ESD Range -0.3 ~ 3 -0.3~VDD+0.3 10 -40~85 150 -65~160 260 260 -1500~+1500 -100~+100 -500~+500 Units V V dBm ℃ ℃ ℃ ℃ ℃ V V V Specifications DC Characteristics Typically TA=25℃ VDD=2.8V, unless otherwise noted Table 2. Parameters Supply Voltage Supply Current EN Input High EN Input Low Condition Min 1.6 EN=High EN=Low Typ 2.8 7 1 Max 3.0 0.8 0.6 Units V mA uA V V Page 3 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode AC Characteristics All AC characteristics are measured on Maxscend’s EVB, unless otherwise noted. Typically TA=25℃ VDD=2.8V Low noise mode characteristics Table 3 Middle Band Specifications EN = high, low noise mode. L1 = 4.3nH, input matching to Middle band only Parameters RF Frequency Range Operation current Power Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation VSWR Stability Input Power 1-dB Compression Point In-band Input 3rd order intercept point Out-of band Input 3rd order intermodulation Input 2nd order intercept intermodulation Conditions None Min 1800 -6 -6 Typ Max 2200 Units MHz mA dB dB dB dB dB 7 14 0.8 -10 -10 -25 1.7 1.5 dB dBm -3 2 2 3 -68 -37 Note1 Note2 Note3 Note4 Note5 dBm dBm dBm Note1: F1=1843MHz, F2=1844MHz, two tone input power -25dBm Note2: F1=1960MHz, F2=1961MHz, two tone input power -25dBm Note3: F1=2140MHz, F2=2141MHz, two tone input power -25dBm Note4: F1=2700MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2100MHz Note5: F1=2650MHz, F2=950MHz, two tone input power -25dBm, measure 2nd order intermodulation at 1700MHz Table 4 High Band Specifications EN = high, low noise mode. L1 = 3.9nH, input matching to High band only Parameters RF Frequency Range Operation current Power Gain Noise Figure Input Return Loss Output Return Loss Reverse Isolation VSWR Stability Input Power 1-dB Compression Point In-band Input 3rd order intercept point 3rd Out-of band Input order intermodulation Input 2nd order intercept intermodulation Conditions None Min 2300 -6 -6 Typ Max 2700 Units MHz mA dB dB dB dB dB 7 13 0.9 -10 -10 -25 1.7 1.5 Note6 Note7 Note8 Note9 dB dBm 0 3 2 -67 -38 dBm dBm dBm Note6: F1=2350MHz, F2=2351MHz, two tone input power -25dBm Note7: F1=2655MHz, F2=2656MHz, two tone input power -25dBm Note8: F1=2100MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2700MHz Note9: F1=950MHz, F2=1700MHz, two tone input power -25dBm, measure 2nd order intermodulation at 2650MHz Page 4 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode Bypass mode AC characteristics Table 5 Middle Band Specifications EN = low, low noise mode. L1 = 4.3nH, input matching to Middle band only Parameters RF Frequency Range Operation current Insertion loss Input Return Loss Output Return Loss Input Power 1-dB Compression Point Conditions None Min 1800 Typ Max 2200 Units MHz uA dB dB dB dBm Max 2700 Units MHz uA dB dB dB dBm 1 2 -15 -10 +15 Table 6 High Band Specifications EN = low, low noise mode. L1 = 3.9nH, input matching to High band only Parameters RF Frequency Range Operation current Insertion loss Input Return Loss Output Return Loss Input Power 1-dB Compression Point Conditions None Min 2300 -7 -8 Typ 1 2 -10 -10 +14 Pin Descriptions Table 7 Pin Pin Name I/O Pin Description 1 GND AG Analog VSS 2 VDD AP Power supply, 1.6~3.0V 3 RFOUT AO LNA output 4 GND AG Analog VSS 5 RFIN AI LNA input from antenna 6 EN DI Pull high into low noise mode, pull low into bypass mode Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground) Page 5 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode Outline Dimensions aaa C A D ccc C A3 E A A2 SIDE VIEW aaa C LASER MARK FOR PIN1 IDENTIFICATION IN THIS AREA TOP VIEW e ALL DIMENSIONS ARE IN MILLIMETERS. 0.050 SYMBOL A A A A A B 0.050 A PIN1 ID A A2 A3 e D E aaa MILLIMETER MIN. NOR. 0.40 0.45 0.09 0.12 0.31 0.33 0.35 0.40 0.65 0.70 1.05 1.10 0.10 ccc MAX. 0.50 0.15 0.35 0.45 0.75 1.15 0.20 MIN. 0.0157 0.0035 0.0122 0.0138 0.0256 0.0413 INCH NOR. 0.0177 0.0047 0.0130 0.0157 0.0276 0.0433 0.0039 MAX. 0.0197 0.0059 0.0138 0.0177 0.0295 0.0453 0.0079 BOTTOM VIEW 0.1±0.035 0.2±0.035 B 0.2±0.035 0.1±0.035 0.2±0.035 A 0.2±0.035 Figure 2 MXD8011H outline dimension Page 6 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8011H LTE High-Mid band LNA with bypass mode Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 3 Recommended Lead-Free Reflow Profile Table 8 Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.3.2 Page 7 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential