MXD8015HC

MXD8015HC Low Noise Amplifier for LTE Mid-High Band VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Features General Description MXD8015HC high gain, low noise amplifier (LNA) is dedicated to LTE middle band and high band receive using advanced RFCMOS process. The high linearity performance and low noise figure makes the device an ideal choice for LTE receiving Applications. MXD8015HC works under a 1.6V to 3.3V single power supply while consumes 6 mA current in low noise mode, in power down mode, the power consumption will be reduced to less than 1uA.  Broadband frequency range: 1.8 to 2.7 GHz  High Gain - 15.0dB gain at 2.8V 1.8GHz to 2.2GHz - 13.5dB gain at 2.8V 2.3GHz to 2.7GHz - 14.0dB gain at 1.8V 1.8GHz to 2.2GHz - 12.0dB gain at 1.8V 2.3GHz to 2.7GHz Low noise figure  - 0.8dB noise figure at 2.8V 1.8GHz to 2.2GHz MXD8015HC uses a small 1.1mm × 0.7mm × 0.45mm DFN 6-pin package. - 1.0dB noise figure at 2.8V 2.3GHz to 2.7GHz Applications  - 1.0dB noise figure at 1.8V 1.8GHz to LTE high-mid band receiving 2.2GHz - 1.2dB noise figure at 1.8V 2.3GHz to 2.7GHz  Operation current 6mA  Small, DFN (6-pin, 1.1mm x 0.7mm x 0.45mm) package ，MSL1 No DC blocking capacitors required.  Pin Configuration/Application Diagram (Top view) RFin GND 4 3 RFOUT RF output VDD L1 MXD8015HC RF input RFIN 5 2 EN VDD VDD 0.1uF Enable EN 6 1 GND RFOUT Figure 1 MXD8015HC application circuit Page 2 of 9 Maxscend Microelectronics Company Limited. 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Maxscend Confidential MXD8015HC LNA for LTE mid-high band Pin Descriptions & Input matching inductance Table 1 Pin 1 2 3 4 5 6 Pin Name I/O Pin Description GND AG Analog VSS VDD AP Power supply RFOUT AO LNA output GND AG Analog VSS RFIN AI LNA input from antenna EN DI Pull high into low noise mode, pull low into power down mode Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground), Table 2 Input matching inductance Component Matching Band 1800MHz – 2200MHz L1 2300MHz – 2700MHz Vendor Type Part Number & value Murata Wired inductor, high Q LQW15AN6N8, 6.8nH various Ceramic inductor, low Q 6.2nH Murata Wired inductor, high Q LQW15AN4N3, 4.3nH various Ceramic inductor, low Q 3.9nH Recommended Operation Range Table 3 Parameters Operation Frequency Power supply Control Voltage High Control Voltage Low Symbol Min Typ Max Units f1 VDD VCTL_H VCTL_L 1800 1.6 1.0 0 2.8 1.8 0 2700 3.3 VDD 0.3 MHz V V V Absolute Maximum Ratings Table 4 Maximum ratings Parameters Symbol Minimum Maximum Units Supply voltage Digital control voltage RF input power Operating temperature Storage temperature Electrostatic Discharge Human body model Note1 (HBM), Class 1C Machine Model (MM), Note2 Class A Charged device model Note3 (CDM), Class III VDD VCTL PIN TOP TSTG -0.3 -0.3 -35 -55 +3.6 VDD+0.3, Max: 3.6 +20 +90 +150 V V dBm ℃ ℃ ESD_HBM ESD_MM 1500 - ESD_CDM 150 V 500 Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Note1: According to ESDA/JEDECJS-001-2014 Note2: According to JESD22-A115C Note3: According to ESDA/JEDECJS-002-2014 Page 3 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Specifications Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted Table 5 High Gain mode Electrical Specifications Parameter Symbol Min. Specification Typical Max. Units Test Condition DC Specifications Supply voltage VDD 1.6 2.8 3.3 V Supply current IDD 4.5 0 6 0.05 9 1 mA μA VDD = 2.8V, VEN=high VDD = 2.8V, VEN=low Power gain G 13.0 11.5 15.0 13.5 17.0 15.5 dB dB 1800-2200MHz 2300-2700MHz Noise figure NF - 0.8 1.0 1.3 1.5 dB dB 1800-2200MHz 2300-2700MHz Input Return loss Output Return loss Stability factor |S11| |S22| Kf dB dB dBm dBm 1800 to 2700MHz 1800 to 2700MHz P1dB -10 -10 -6 -4 -5 -6 - Input 1 dB compression point 1.2 -10 -8 -3 -2 1 2 - dBm dBm - - 1 μs Note1 Note2 Shutdown state to power on state RF Specifications Input IP3 Startup time IIP3 - 1800 to 2200MHz 2300 to 2700MHz Note1: Pin=Pin2=-25dBm, F1=2100MHz, F2=2101MHz Note2: Pin=Pin2=-25dBm, F1=2600MHz, F2=2601MHz Page 4 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Specifications Typically TA=25℃ VDD=1.8V, All data measured on Maxscend’s EVB, unless otherwise noted Table 6 High Gain mode Electrical Specifications Parameter Symbol Min. Specification Typical Max. Units Test Condition DC Specifications Supply voltage VDD 1.6 1.8 3.3 V Supply current IDD 3 0 4 0.05 6 1 mA μA VDD = 1.8V, VEN=high VDD = 1.8V, VEN=low Power gain G 12.0 10.0 14.0 12.0 15.5 13.5 dB dB 1800-2200MHz 2300-2700MHz Noise figure NF - 1.0 1.2 1.5 1.7 dB dB 1800-2200MHz 2300-2700MHz |S11| |S22| Kf 1.2 -12 -9 -3 -3 -10 -10 -8 -5 1 1 -5 -6 - dB dB dBm dBm dBm dBm - - 1 RF Specifications Input Return loss Output Return loss Stability factor Input 1 dB compression point Input IP3 Startup time P1dB IIP3 - μs 1800 to 2700MHz 1800 to 2700MHz 1800 to 2200MHz 2300 to 2700MHz Note1 Note2 Shutdown state to power on state Note1: Pin=Pin2=-25dBm, F1=2100MHz, F2=2101MHz Note2: Pin=Pin2=-25dBm, F1=2600MHz, F2=2601MHz Page 5 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Package Outline Dimensions Dimension Table Figure 2 MXD8015HC outline dimension Page 6 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Marking Specification Pin 1 Point st 1 letter: Product Code. last letter(Variable): Lot Code From 1~9 and A ~Z excluding letter "I" and "O" for each letter Figure 3 Marking specification (Top View) Page 7 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Tape and Reel Dimensions Figure 4 Tape and reel dimensions Page 8 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8015HC LNA for LTE mid-high band Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 5 Recommended Lead-Free Reflow Profile Table 7 Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. Page 9 of 9 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential