MXD8113H9

MXD8113H9 SP3T LNA for LTE mid-high band RX VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX General Description Applications The MXD8113H9 is an FEM integrated with SP3T, LNA. The high linearity performance and low noise  LTE high-mid band receiving Features figure makes the device an ideal choice for LTE  Broadband frequency range: 1.7 to 2.7 GHz receiving applications.  High Gain The MXD8113H9 FEM is provided in a compact - 13dB gain at 1.7GHz to 2.3GHz Quad Flat No-Lead (QFN) 1.15mm x 1.15mm x - 12dB gain at 2.3GHz to 2.7GHz 0.45mm package. A functional block diagram is  Low noise figure shown in Figure 1. The pin configuration and - 0.9dB noise figure at 1.7GHz to 2.3GHz package are shown in Figure 2. Signal pin - 1.1dB noise figure at 2.3GHz to 2.7GHz assignments and functional pin descriptions are  Input 1dB compression point -4dBm provided in Table 1.  Operation current 6.5mA  Small, LGA (9-pin, 1.15mm x 1.15mm x 0.45mm) package ，MSL1 Functional Block Diagram and Pin Function RF2 L3 L2 L1 RF1 RF3 1 V1 8 V2 7 VDD 2 RF2 9 GND 6 GND 3 RF1 4 RF3 5 OUT V1 1nF V2 1nF VDD 1nF MXD8113H9 RFOUT Figure 1.Functional Block Diagram Figure 2.Pin-out (Top View) Page 2 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX Table 1. Pin Description Pin No. Name Description Pin No. Name Description 1 2 3 4 5 V1 RF2 RF1 RF3 OUT Digital control 1# RF-Port 2 RF-Port 1 RF-Port 3 RF output 6 7 8 9 GND VDD V2 GND Ground Power Supply Digital control 2# Ground Table 2 Input matching inductance Component Matching Band 1700MHz – 2300MHz L1/L2/L3 2300MHz – 2700MHz Vendor Type Part Number & value Murata Wired inductor, high Q LQW15AN6N2, 6.2nH various Ceramic inductor, low Q 5.6nH Murata Wired inductor, high Q LQW15AN5N1, 5.1nH various Ceramic inductor, low Q 4.9nH Truth Table Table 3. V1 V2 Active Path 1 0 1 0 0 1 1 0 RF1 active RF2 active RF3 active Power down Note: “1” = 1.0 V to 3.00 V. “0” = –0 V to +0.3 V. Recommended Operation Range Table 4. Parameters Operation Frequency Power supply Switch Control Voltage High Switch Control Voltage Low Symbol Min Typ Max Units f1 1700 2.5 1.6 0 2.8 1.8 0 2700 3.0 3.0 0.3 MHz V V V VDD VCTL_H VCTL_L Page 3 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX Specifications Table 5.Electrical Specifications Parameter Symbol DC Specifications Control voltage: Low High Supply voltage Supply current VCTL_L VCTL_H VDD IDD Power down current IPD Specification Min. Typical Max. 0 1.60 2.5 0 +1.8 2.8 6.5 0.3 3.00 3.0 1 Units V V V mA Test Condition VDD = 2.8 V uA RF Specifications Input Return loss |S11| 11 10 - Output Return loss Isolation(active gain - inactive gain) Input 1 dB compression point Switching on time |S22| - -10 -6 dB 1700 to 2700MHz ISO 25 30 - dB 1700 to 2700MHz -7 -4 - -4 -1 2 3 dBm dBm us 1700 to 2300MHz 2300 to 2700MHz 50% VCTL to 10/90% RF - 2 3 us 3 4 us 50% VCTL to 90/10% RF Shutdown state to any RF switch state Power gain G Noise figure nf P1dB Switching off time - Startup time 13 12 0.9 1.1 -10 14.5 13.5 1.4 1.6 -6 dB dB dB dB dB 1700 to 2300MHz 2300 to 2700MHz 1700 to 2300MHz 2300 to 2700MHz 1700 to 2700MHz Absolute Maximum Ratings Table 6. Maximum ratings Parameters Symbol Minimum Maximum Units Supply voltage Digital control voltage RF input power Operating temperature Storage temperature Electrostatic discharge: Human Body Model (HBM), Class 1C Charged device model (CDM), Class III VDD VCTL PIN TOP TSTG +2.5 0 –35 –55 +3.3 +3.0 +10 +90 +150 V V dBm ℃ ℃ ESD - 1500 V 1000 V Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Page 4 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX Package Outline Dimension Figure 4. Package outline dimension Page 5 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX Marking Specification Last letter(Variable): GA st 1 letter (Fixed):G Product Code. Lot code From 1~9 and A ~Z excluding letter "I" and "O" Pin 1 Figure 5. Marking specification (Top View) Tape and Reel Dimensions Figure 6. Tape and reel dimensions Page 6 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8113H9 – SP3T LNA for LTE RX Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 7. Recommended Lead-Free Reflow Profile Table 7. Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.0.2 Page 7 of 7 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential