MXD8011HF

MXD8011HF LNA with Bypass Mode for LTE Mid-High Band Description Features MXD8011HF high gain, low noise amplifier (LNA) is dedicated  Broadband frequency range: 1.8 to 2.7 GHz to LTE middle band and high band receive using advanced  High Gain  14.0 dB gain at 1.8GHz to 2.2GHz MXD8011HF works under a 1.6V to 3.0V single power supply  13.0 dB gain at 2.3GHz to 2.7GHz while consumes 7.5 mA current in low noise mode, in bypass  Low noise figure  0.8 dB noise figure at 1.8GHz to 2.2GHz package.  0.9 dB noise figure at 2.3GHz to 2.7GHz Applications  Operation current 7.5 mA  Small, LGA (6-pin, 1.1mm x 0.7mm x 0.45mm) package ， RFCMOS process. This product has two operation modes, low noise mode and bypass mode. mode, the power consumption will be reduced to less than 1uA. MXD8011HF uses a small 1.1mm×0.7mm×0.45mm LGA 6-pin  LTE high-mid band receiving MSL1  Page 1 / 7 No DC blocking capacitors required. MXD8011HF Rev1.8 This document contains information that is confidential and proprietary to Maxscend Microelectronics Company, Ltd. (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Pin Description LNA with Bypass Mode for LTE Mid-High Band Pin Configuration/Application Diagram RFIN GND 4 RFOUT 3 MXD8011HF RFIN L1 EN 5 VDD EN 2 VDD 1nF 6 1 GND RFOUT Figure 1 Pin Configuration/Application Diagram (Top View) Table 1 Pin Descriptions Pin No. Name I/O Pin Description 1 GND AG Analog VSS 2 VDD AP Power supply 3 RFOUT AO LNA output 4 GND AG Analog VSS 5 RFIN AI LNA input from antenna 6 EN DI Pull high into low noise mode, pull low into bypass mode Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO (analog bidirectional), AP (analog power), AG (analog ground), Table 2 Input matching inductance Component Matching Band 1800MHz – 2200MHz Vendor Type Part Number & value Murata Wired inductor, high Q LQW15AN4N7, 4.7nH various Ceramic inductor, low Q 4.3nH Murata Wired inductor, high Q LQW15AN3N9, 3.9nH various Ceramic inductor, low Q 3.6nH L1 2300MHz – 2700MHz Page 2 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential Electrical Characteristics LNA with Bypass Mode for LTE Mid-High Band Absolute Maximum Ratings Table 3 Absolute Maximum Ratings Parameters Symbol Ranges Units Supply voltage VDD -0.3～+3.3 V Digital control voltage VCTL -0.3～VDD+0.3, Max:3.3 V RF input power PIN +22 dBm Operating temperature TOP -40～+90 ℃ Storage temperature TSTG -65～+150 ℃ Human Body Mode ESD ESD_HBM 1500 V Charge Device Mode ESD ESD_CDM 1000 V Note1: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Note2: According to ESDA/JEDECJS-001-2014 Note3: According to ESDA/JEDECJS-002-2014 DC Characteristics Table 4 DC Electrical Specifications Parameter Symbol Specification Min. Typ. Max. Units Power supply VDD 1.6 2.8 3.0 V Supply current IDD_HG 5.5 7.5 11.0 mA Supply current IDD_BY - 0.05 1.0 uA Control Voltage High VCTL_H 1.0 1.8 VDD V Control Voltage Low VCTL_L 0.0 0.0 0.3 V Test Condition High Gain Mode VDD = 2.8V, VEN=high Bypass Mode VDD = 2.8 V, VEN=low Page 3 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential Electrical Characteristics LNA with Bypass Mode for LTE Mid-High Band AC Characteristics Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted Table 5 High Gain mode Electrical Specifications Parameter Symbol Specification Test Condition Typ. Max. 1800 - 2700 MHz 12.5 14.0 15.5 dB 1800-2200MHz 11.5 13.0 14.5 dB 2300-2700MHz 0.8 1.4 dB 1800-2200MHz 0.9 1.5 dB 2300-2700MHz DC Specifications Power gain Units Min. G Noise figure NF - Input Return loss |S11| - -10 -5 dB 1800 to 2700MHz Output Return loss |S22| - -10 -6 dB 1800 to 2700MHz Kf 1.2 - - -8 -3 dBm 1800 to 2200MHz Stability factor Input 1 dB compression P1dB - point -4 0 dBm 2300 to 2700MHz -2 3 dBm Note1 -3 2 dBm Note2 -3 2 dBm Note3 Out-of band Input 3rd -62 -68 dBm Note4 order intermodulation -61 -67 dBm Note5 Input 2nd order intercept -32 -37 dBm Note6 intermodulation -33 -38 dBm Note7 - - Input IP3 IIP3 Startup time - 1 μs Shutdown state to power on state Note1: Pin=Pin2=-25dBm, F1=1960MHz, F2=1961MHz Note2: Pin=Pin2=-25dBm, F1=2100MHz, F2=2101MHz Note3: Pin=Pin2=-25dBm, F1=2600MHz, F2=2601MHz Note4: F1=2700MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2100MHz Note5: F1=2100MHz, F2=2400MHz, two tone input power -25dBm, measure 3rd order intermodulation at 2700MHz Note6: F1=2650MHz, F2=950MHz, two tone input power -25dBm, measure 2nd order intermodulation at 1700MHz Note7: F1=950MHz, F2=1700MHz, two tone input power -25dBm, measure 2nd order intermodulation at 2650MHz Table 6 Bypass Mode Electrical Specifications Parameter Symbol Insertion loss Specification Units Test Condition - dB 1800 to 2700MHz -10 -6 dB 1800 to 2700MHz - -10 -6 dB 1800 to 2700MHz 10 15 - dBm 1800 to 2700MHz Min. Typ. Max. IL -5 -2 Input Return loss |S11| - Output Return loss |S22| P1dB Input 1 dB compression point Page 4 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential Package Information LNA with Bypass Mode for LTE Mid-High Band Package Outline Dimensions Figure 2 Package outline dimension Page 5 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential Package Information LNA with Bypass Mode for LTE Mid-High Band Marking Specifications ZA Product Code(Fixed)： Z or G Manufacture Code(Variable): From 0~9 and A ~Z excluding letter "I" and "O" for lot tracking Pin 1 Figure 3 Marking Specification (Top View) Tape and Reel Dimensions Figure 4 Tape and Reel Dimensions Page 6 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential Package Information LNA with Bypass Mode for LTE Mid-High Band Reflow Chart tP TP Critical Zone TL to TP Ramp-Up Temperature TL TSMAX tL TSMIN Ramp-Down tS Preheat t25-TP Time Figure 5 Recommended Lead-Free Reflow Profile Table 7 Reflow Chart Parameters Reflow Profile Preheat Temperature(TSMIN to TSMAX) Preheat Time(ts) Parameter 150℃ to 200℃ 60 to180 Seconds Ramp-Up Rate(TSMAX to TP) 3℃/s MAX Time Above TL 217℃(tL) 60 to 150 Seconds Peak Temperature（TP） 260℃ Time within 5℃ of Peak Temperature(tP) Ramp-Down Rate(TSMAX to TP) Time for 25℃ to Peak Temperature(t25-TP) 20 to 40 Seconds 6℃/s MAX 8 Minutes MAX ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be applied when devices are operated. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. Page 7 / 7 MXD8011HF: Rev1.8 Copyright @2018 Maxscend Microelectronics Company, Ltd. All rights reserved. Maxscend Confidential