MXD8015LL
Low Noise Amplifier for LTE Low Band
VED
APPRO
This document contains information that is confidential and proprietary to Maxscend Microelectronics
Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
Maxscend. No transfer or licensing of technology is implied by this document.
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MXD8015LL LNA for LTE Low band
Features
General Description
MXD8015LL high gain, low noise amplifier (LNA)
is dedicated to LTE low band receive using
advanced RFCMOS process. The high linearity
performance and low noise figure makes the
device an ideal choice for LTE receiving
Applications.
MXD8015LL works under a 2.5V to 3.3V single
power supply while consumes 5.5 mA current in
low noise mode, in power down mode, the power
consumption will be reduced to less than 1uA.
MXD8015LL uses a small 1.1mm × 0.7mm ×
0.45mm DFN 6-pin package.
Broadband frequency range: 716 - 960MHz
High Gain
-
12.5 dB gain at 716MHz - 960MHz
Low noise figure
-
0.85dB noise figure at 716MHz - 960MHz
Operation current 5.5mA
Small, DFN (6-pin, 1.1mm x 0.7mm x
0.45mm) package,MSL1
No DC blocking capacitors required.
Applications
LTE low band receiving
Pin Configuration/Application Diagram (Top view)
RFin
GND
4
3
RFOUT RF output
VDD
RF input
MXD8015LL
L1
RFIN
5
2
EN
VDD
VDD
0.1uF
Enable
EN
6
1
GND
RFOUT
Figure 1 MXD8015LL application circuit
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MXD8015LL LNA for LTE Low band
Pin Descriptions & Input matching inductance
Table 1
Pin
1
2
3
4
5
6
Pin Name
I/O
Pin Description
GND
AG
Analog VSS
VDD
AP
Power supply
RFOUT
AO
LNA output
GND
AG
Analog VSS
RFIN
AI
LNA input from antenna
EN
DI
Pull high into low noise mode, pull low into shutdown mode
Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO
(analog bidirectional), AP (analog power), AG (analog ground).
Table 2 Input matching inductance
Component
Matching Band
716MHz – 821MHz
L1
850MHz – 970MHz
Vendor
Type
Part Number & value
Murata
Wired inductor, high Q
LQW15AN33N, 33nH
various
Ceramic inductor, low Q
30nH
Murata
Wired inductor, high Q
LQW15AN33N, 20nH
various
Ceramic inductor, low Q
18nH
Recommended Operation Range
Table 3
Parameters
Operation Frequency
Power supply
Control Voltage High
Control Voltage Low
Symbol
Min
Typ
Max
Units
f1
VDD
VCTL_H
VCTL_L
716
2.5
1.0
0
2.8
1.8
0
960
3.3
VDD
0.3
MHz
V
V
V
Absolute Maximum Ratings
Table 4 Maximum ratings
Parameters
Symbol
Minimum
Maximum
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model
Note1
(HBM), Class 2
Machine Model (MM),
Note2
Class B
Charged device model
Note3
(CDM), Class III
VDD
VCTL
PIN
TOP
TSTG
-0.3
-0.3
+3.6
VDD+0.3, Max: 3.6
+20
+90
+150
-35
-55
ESD_HBM
ESD_MM
Units
V
V
dBm
℃
℃
2000
-
ESD_CDM
200
V
500
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Note1: According to ESDA/JEDECJS-001-2014
Note2: Acoording to JESD22-A115C
Note3: Acoording to ESDA/JEDECJS-002-2014
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MXD8015LL LNA for LTE Low band
Specifications
Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted
Table 5 High Gain mode Electrical Specifications
Parameter
Symbol
DC Specifications
Supply voltage
VDD
Supply current
Min.
Specification
Typical
Max.
Units
Test Condition
IDD
2.5
4.0
0
2.8
5.5
0.05
3.3
8.0
1
V
mA
uA
VDD = 2.8 V, VEN=high
VDD = 2.8 V, VEN=low
G
11
12.5
14
dB
716 to 960MHz
NF
|S11|
|S22|
Kf
1.5
0.85
-10
-10
-
1.35
-6
-6
-
dB
dB
dB
-
716 to 960MHz
716 to 960MHz
716 to 960MHz
P1dB
-7
-3
-
dBm
716 to 960MHz
IIP3
-2
-1
2
3
-
dBm
-
-
1
us
RF Specifications
Power gain
Noise figure
Input Return loss
Output Return loss
Stability factor
Input 1 dB
compression point
Input IP3
Startup time
Note1
Note2
Shutdown state to power on
state
Note1: Pin=Pin2=-25dBm, F1=770MHz, F2=771MHz
Note2: Pin=Pin2=-25dBm, F1=900MHz, F2=901MHz
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MXD8015LL LNA for LTE Low band
Package Outline Dimensions
Dimension Table
Figure 2 MXD8015LL outline dimension
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MXD8015LL LNA for LTE Low band
Marking Specification
Last letter(Variable):
DA
st
1 letter (Fixed):
Product Code
Lot code
From 1~9 and A ~Z
excluding letter "I" and "O"
Pin 1
Figure 3 Marking specification (Top View)
Tape and Reel Dimensions
Figure 4 Tape and reel dimensions
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MXD8015LL LNA for LTE Low band
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5 Recommended Lead-Free Reflow Profile
Table 6 Reflow condition
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate(TSmax to Tp)
3℃/second max.
Preheat temperature(TSmin to TSmax)
150℃ to 200℃
Preheat time(ts)
60 - 180 seconds
Time above TL , 217℃(tL)
60 - 150 seconds
Peak temperature(Tp)
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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