MXD8921H
SiGe Low Noise Amplifier
with Bypass Mode for LTE Mid-High Band
Rev1.3
VED
APPRO
This document contains information that is confidential and proprietary to Maxscend Microelectronics
Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
Maxscend. No transfer or licensing of technology is implied by this document.
Page 1 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Features
General Description
MXD8921H high gain, low noise amplifier (LNA) is
dedicated to LTE middle band and high band
receive using advanced SiGe process. This
product has two operation modes, low noise mode
and bypass mode.
MXD8921H works under a 1.6V to 3.6V single
power supply while consumes 4.2 mA current in
low noise mode, in bypass mode, the power
consumption will be reduced to less than 1uA.
Broadband frequency range: 1.7G to 2.7 GHz
High Gain
MXD8921H uses a small 1.1mm × 0.7mm ×
0.45mm LGA 6-pin package.
Applications
LTE high-mid band receiving
-
14.6dB gain at 1.7GHz to 1.8GHz
-
14.5dB gain at 1.8GHz to 2.2GHz
-
13.5dB gain at 2.3GHz to 2.7GHz
Ultra low noise figure
-
0.60dB noise figure at 1.7GHz to 1.8GHz
-
0.65dB noise figure at 1.8GHz to 2.2GHz
-
0.8dB noise figure at 2.3GHz to 2.7GHz
Operation current 4.2mA
Single supply voltage range 1.6V to 3.6V
Small, LGA (6-pin, 1.1mm x 0.7mm x 0.45mm)
package ，MSL1
Pin Configuration/Application Diagram (Top view)
RFin
GND
4
3
RFOUT RF output
V DD
L1
MXD8921H
1nF
RF inp ut
RFI N
5
2
EN
V DD
VDD
0.1u F
E nabl e
EN
6
1
GND
RFOUT
Figure 1 MXD8921H application circuit
Page 2 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Pin Descriptions & Input matching inductance
Table 1
Pin
1
2
3
4
5
6
Pin Name
I/O
Pin Description
GND
AG
Analog VSS
VDD
AP
Power supply
RFOUT
AO
LNA output
GND
AG
Analog VSS
RFIN
AI
LNA input from antenna
EN
DI
Pull high into low noise mode, pull low into bypass mode
Note: DI (digital input), DO (digital output), DIO (digital bidirectional), AI (analog input), AO (analog output), AIO
(analog bidirectional), AP (analog power), AG (analog ground),
Table 2 Input matching inductance
Component
Matching Band
1700MHz – 1800MHz
L1
1800MHz – 2200MHz
2300MHz – 2700MHz
Vendor
Type
Part Number & value
Murata
Wired inductor, high Q
LQW15AN, 5.1nH
various
Ceramic inductor, low Q
4.7nH
Murata
Wired inductor, high Q
LQW15AN, 4.6nH
various
Ceramic inductor, low Q
4nH
Murata
Wired inductor, high Q
LQW15AN, 3.9nH
various
Ceramic inductor, low Q
3.3nH
Recommended Operation Range
Table 3
Parameters
Operation Frequency
Power supply
Control Voltage High
Control Voltage Low
Symbol
Min
Typ
Max
Units
f1
VDD
VCTL_H
VCTL_L
1700
1.6
1.0
0
2.8
1.8
0
2700
3.6
VDD
0.3
MHz
V
V
V
Absolute Maximum Ratings
Table 4 Maximum ratings
Parameters
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic Discharge
Human body model
Note1
(HBM), Class 1B
Charged device model
Note2
(CDM), Class III
Symbol
Minimum
Maximum
Units
VDD
VCTL
PIN
TOP
TSTG
-0.3
-0.3
–40
–65
+4.0
VDD+0.3
+25
+90
+160
V
V
dBm
℃
℃
ESD_HBM
2000
V
ESD_CDM
1000
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
Note1: According to ESDA/JEDECJS-001-2014
Note2: According to ESDA/JEDECJS-002-2014
Page 3 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Specifications
Typically TA=25℃ VDD=2.8V, All data measured on Maxscend’s EVB, unless otherwise noted
Table 5 High Gain mode Electrical Specifications
Parameter
Symbol
Min.
Specification
Typical
Max.
Units
Test Condition
DC Specifications
Supply voltage
Supply current
VDD
IDD
1.6
3
2.8
4.2
3.6
5.8
V
mA
VDD = 2.8V, VEN=1.8V
12.6
12.5
11.5
-
14.6
14.5
13.5
0.6
0.65
0.8
-8
-10
-12
-8
-12
-14
-23
16.6
16.5
15.5
0.95
1.0
1.15
-4
-5
-6
-4
-6
-8
-18
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700 to 2700MHz
1.0
-8.3
-6
0
2
-4.8
-2.5
5
7
-
dBm
dBm
dBm
dBm
turn-on-time
-
-
4
μs
turn-off-time
-
-
1
μs
RF Specifications
Power gain
G
Noise figure
NF
Input Return loss
|S11|
Output Return loss
|S22|
Isolation
ISL
Stability factor
Input 1 dB
compression point
Kf
Input IP3
P1dB
IIP3
Switch time
at 2GHz
at 2.5GHz
Note1
Note2
Bypass state to High gain state,
to 90% of the Gain
High Gain state to Bypass state,
to 10% of the Gain
Note1: Pin=Pin2=-20dBm, F1=2000MHz, F2=2001MHz
Note2: Pin=Pin2=-20dBm, F1=2500MHz, F2=2501MHz
Table 6 Bypass mode Electrical Specifications
Parameter
Symbol
DC Specifications
Supply voltage
Supply current
VDD
IDD
Specification
Min.
Typical
Max.
Units
Test Condition
1.6
0
2.8
0.1
3.6
1
V
uA
VDD = 2.8 V, VEN=low
-5
-4
-10
-5
dB
dB
dB
1700-1800MHz
1800-2700MHz
1700 to 2700MHz
RF Specifications
Input Return loss
|S11|
-8
-7
-
Output Return loss
Input 1 dB
compression point
|S22|
-
-10
-5
dB
1700 to 2700MHz
P1dB
5
10
-
dBm
1700 to 2700MHz
Insertion loss
IL
Page 4 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Specifications
Typically TA=25℃ VDD=1.8V, All data measured on Maxscend’s EVB, unless otherwise noted
Table 7 High Gain mode Electrical Specifications
Parameter
Symbol
Min.
Specification
Typical
Max.
Units
Test Condition
DC Specifications
Supply voltage
Supply current
VDD
IDD
1.6
2.8
1.8
4.0
3.6
5.6
V
mA
VDD = 1.8V, VEN=1.8V
12.3
12.2
11.2
-
14.3
14.2
13.2
0.6
0.65
0.8
-8
-10
-12
-8
-12
-14
-23
16.3
16.2
15.2
0.95
1.0
1.15
-4
-5
-6
-4
-6
-8
-18
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700-1800MHz
1800-2200MHz
2300-2700MHz
1700 to 2700MHz
1.0
-10.5
-8.5
-1
0
-7
-5
3
5
-
turn-on-time
-
-
4
μs
turn-off-time
-
-
1
μs
RF Specifications
Power gain
G
Noise figure
NF
Input Return loss
|S11|
Output Return loss
|S22|
Isolation
ISL
Stability factor
Input 1 dB
compression point
Kf
Input IP3
P1dB
IIP3
-
dBm
dBm
dBm
dBm
Switch time
at 2GHz
at 2.5GHz
Note1
Note2
Bypass state to High gain state,
to 90% of the Gain
High Gain state to Bypass state,
to 10% of the Gain
Note1: Pin=Pin2=-20dBm, F1=2000MHz, F2=2001MHz
Note2: Pin=Pin2=-20dBm, F1=2500MHz, F2=2501MHz
Table 8 Bypass mode Electrical Specifications
Parameter
Symbol
DC Specifications
Supply voltage
Supply current
VDD
IDD
Specification
Min.
Typical
Max.
Units
Test Condition
1.6
0
1.8
0.1
3.6
1
V
uA
VDD = 1.8 V, VEN=low
-5.4
-4.4
-10
-5
dB
dB
dB
1700-1800MHz
1800-2700MHz
1700 to 2700MHz
RF Specifications
Input Return loss
|S11|
-8.4
-7.4
-
Output Return loss
Input 1 dB
compression point
|S22|
-
-10
-5
dB
1700 to 2700MHz
P1dB
5
10
-
dBm
1700 to 2700MHz
Insertion loss
IL
Page 5 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Package Outline Dimensions
aaa C
A
D
ccc C
A3
E
A
A2
SIDE VIEW
aaa C
LASER MARK FOR PIN1
IDENTIFICATION IN THIS AREA
TOP VIEW
e
ALL DIMENSIONS ARE IN MILLIMETERS.
0.050
SYMBOL
A
A
AA
A
A
B
0.050
PIN1 ID
A
A2
A3
e
D
E
aaa
MILLIMETER
MIN.
NOR.
0.40
0.45
0.09
0.12
0.31
0.33
0.35
0.40
0.65
0.70
1.05
1.10
0.10
ccc
0.20
MAX.
0.50
0.15
0.35
0.45
0.75
1.15
MIN.
0.0157
0.0035
0.0122
0.0138
0.0256
0.0413
INCH
NOR.
0.0177
0.0047
0.0130
0.0157
0.0276
0.0433
0.0039
MAX.
0.0197
0.0059
0.0138
0.0177
0.0295
0.0453
0.0079
BOTTOM VIEW
0.1±0.035
0.2±0.035
B
0.2±0.035
0.1±0.035
0.2±0.035
A
0.2±0.035
Figure 2 MXD8921H outline dimension
Page 6 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Marking Specification
Manufacture Code(Variable):
Product Code(Fixed)：
From 1~9 and A ~Z
V
excluding letter "I" and "O"
for lot tracking
Pin 1
Figure 3 Marking specification (Top View)
Tape and Reel Dimensions
Figure 4 Tape and reel dimensions
Page 7 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
MXD8921H LNA with bypass mode for LTE mid-high band
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5 Recommended Lead-Free Reflow Profile
Table 9 Reflow condition
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate（TSmax to Tp）
3℃/second max.
Preheat temperature（TSmin to TSmax）
150℃ to 200℃
Preheat time（ts）
60 - 180 seconds
Time above TL , 217℃（tL）
60 - 150 seconds
Peak temperature（Tp）
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
1.3.1
Page 8 of 8
Maxscend Microelectronics Company Limited. All rights reserved.
Maxscend Confidential
