SMT12N60

SMT12N60 600V N-Channnel MOSFET ●Features： ■ 12.0A, 600V, RDS(on)(Typ) =0.63Ω@VGS=10V ■ Low Gate Charge ■ Low Crss ■ 100% Avalanche Tested ■ Fast Switching ■ Improved dv/dt Capability ●Application: ■ High Frequency Switching Mode Power Supply ■ Active Power Factor Correction Absolute Maximum Ratings(Tc=25C unless otherwise noted) Symbol Parameter VDSS ID IDM Drain-Source Voltage Drain Current - Continuous(Tc=25C) - Continuous(Tc=100C) Drain Current -Pulsed (Note1) Value Unit 600 V 12.0* A 7.4* A 48* A ±30 V VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 880 mJ IAR Avalanche Current (Note1) 12.0 A EAR Repetitive Avalanche Energy (Note1) 25 mJ Peak Diode Recovery dv/dt (Note3) 4.5 V/ns dv/dt PD Power Dissipation(TC =25C) -Derate above 25°C 145 W 1.16 W/C Tj Operating Junction Temperature 150 C -55 to+150 C Max Unit Tstg Storage Temperature Range * Drain Current Limited by Maximum Junction Temperature. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance,Junction to Case 0.86 C /W RθJA Thermal Resistance,Junction to Ambient 62.5 C /W HUAKE semiconductors 2017.08 1/5 编号：HK-WI-TD-005 版本/版次：B/0 SMT12N60 600V N-Channnel MOSFET Electrical Characteristics(Tc=25C unless otherwise noted) Symbol Parameter Test Conditons Off Characteristics BVDSS Drain-source Breakdown Voltage VGS=0V ,ID=250μA △BVDSS /△TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward IGSSF Gate-Body Leakage Current,Reverse IGSSR On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source On-Resistance gFS Forward Transconductance ID=250μA (Referenced to 25C) VDS=600V,VGS=0V VDS=480V,Tc=125C VGS=+30V, VDS=0V VGS=-30V, VDS=0V VDS= VGS, ID=250μA VGS=10 V, ID=6.0A VDS=40 V, ID=6.0A (Note4) Dynamic Characteristics Input Capacitance Ciss VDS=25V,VGS=0V, Output Capacitance Coss f=1.0MHz Reverse Transfer Capacitance Crss Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time tr VDD = 300 V, ID = 12 A, RG = 25 Ω (Note4,5) Turn-Off Delay Time td(off) Turn-Off Fall Time tf Total Gate Charge Qg VDS = 480 V, ID =12 A, Gate-Source Charge Qgs VGS = 10 V (Note4,5) Gate-Drain Charge Qgd Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS Maximum Pulsed Drain-Source Diode Forward Current ISM Drain-Source Diode Forward Voltage VGS =0V,IS=12.0A VSD Reverse Recovery Time trr VGS =0V, IS=12.0A, d IF /dt=100A/μs (Note4) Reverse Recovery Charge Qrr Min Typ Max Unit 600 -- -- V -- 0.7 -- V/C ----- ----- 1 10 100 -100 μA μA nA nA -4.0 0.63 0.80 V Ω -- 7.8 -- S ---- 1760 182 21 ---- pF pF pF -------- 30 85 140 90 48 8.5 21 -------- ns ns ns ns nC nC nC ------ ---425 4.31 12 48 1.3 --- A A V ns μC 2.0 -- Notes: 1、Repetitive Rating:Pulse Width Limited by Maximum Junction Temperature. 2、L = 11mH, IAS =12.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25C. 3、ISD≤12.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25C. 4、Pulse Test : Pulse Width ≤300 µ s, Duty Cycle≤2%. 5、Essentially Independent of Operating Temperature. HUAKE semiconductors 2017.08 2/5 编号：HK-WI-TD-005 版本/版次：B/0 SMT12N60 600V N-Channnel MOSFET On-Regin Characteristics On-Resistance Variation vs. Drain Current and Gate Voltage Transfer Characteristics Body Diode Forward Voltage Variation vs. Source Current and Temperature Capacitance Characteristics HUAKE semiconductors 2017.08 Gate Charge Characteristics 3/5 编号：HK-WI-TD-005 版本/版次：B/0 SMT12N60 600V N-Channnel MOSFET Breakdown Voltage Variation vs. Temperature On-Resistance Variation vs. Temperature Maximum Drain Current Vs. Case Temperature Maximum Safe Operating Area HUAKE semiconductors 2017.08 4/5 编号：HK-WI-TD-005 版本/版次：B/0 SMT12N60 600V N-Channnel MOSFET TO-220 MECHANICAL DATA SYMBOL A B B1 b1 c D D1 min 4.00 1.25 0.55 0.65 0.40 14.80 6.00 HUAKE semiconductors nom 2017.08 max 4.80 1.55 1.05 0.95 0.60 16.80 7.00 SYMBOL E e F L L1 Q Q1 φP 5/5 min 9.50 1.15 12.00 2.50 2.50 1.80 3.40 nom 2.54 3.00 UNIT：mm max 10.50 1.45 14.00 3.50 3.50 2.80 3.90 编号：HK-WI-TD-005 版本/版次：B/0