MH254
Micro-power CMOS Unipolar Hall Effect Switch
MH254 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of sensitivity
micro-power switch. Superior high-temperature performance is made possible through a dynamic
offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage
normally caused by device over molding, temperature dependencies, and thermal stress.
MH254 is special made for low operation voltage, 1.65V, to active the chip which is includes
the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal
amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer
fabrication processing is used to take advantage of low-voltage requirements, component matching,
very low input-offset errors, and small component geometries. This device requires the presence of
unipolar magnetic fields for operation.
The package type is in a Halogen Free version has been verified by third party Lab.
Features and Benefits
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CMOS Hall IC Technology
Strong RF noise protection
1.65 to 6V for battery-powered applications
Operation down to 1.65V, Unipolar Hall Switch Micro power consumption
High Sensitivity for reed switch replacement applications
Low sensitivity drift in crossing of Temp. range
Ultra Low power consumption at 5uA (Avg)
High ESD Protection, HBM > ±4KV( min )
Totem-pole output
RoHS compliant 2011/65/EU and Halogen Free
Applications
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082118
Solid state switch
Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set)
Magnet proximity sensor for reed switch replacement in low duty cycle applications
Water Meter
PDA
PDVD
NB
Pad PC
Page 1 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
Ordering Information
Company Name and Product Category
XXXXXXXXX - X
MH:MST Hall Effect/MP:MST Power MOSFET
Part number
Sorting Code
Package type
181,182,183,184,185,248,249,276,477,381,381F,381R,382…..
If part # is just 3 digits, the forth digit will be omitted.
Temperature range
Temperature Code
Part number
E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃
Package type
UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23,
Company Name and Product Category
SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin)；
SS:TSOT-26,SD:DFN-6
Sorting
α,β,Blank…..
Part No.
MH254EUA
MH254EST
MH254ESN
MH254ESQ
MH254ESS
Temperature Suffix
E (-40℃ to + 85℃)
E (-40℃ to + 85℃)
E (-40℃ to + 85℃)
E (-40℃ to + 85℃)
E (-40℃ to + 85℃)
Package Type
UA(TO-92S)
ST (TSOT-23)
SN (SOT-553)
SQ (QFN2020-3)
SS (QFN1x1x0.4)
Custom sensitivity selection is available by MST sorting technology
Functional Diagram
VDD
Awake/Sleep
Timing Control
Offset
Cancellation
VDD
Control
Logic
Amp
Out
Hall
Sensor
GND
Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage
protection, a 100Ω resistor in series with VDD is recommended.
MH254, HBM > ±4KV which is verified by third party lab.
082118
Page 2 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
Absolute Maximum Ratings At(Ta=25℃)
Characteristics
Supply voltage, (VDD)
Output Voltage, (Vout)
Reverse Voltage, (VDD) (VOUT)
Magnetic flux density
Output current, (IOUT)
Operating temperature range, (Ta)
Storage temperature range, (Ts)
Maximum Junction Temp, (Tj)
(θJA) ST/SN/UA/SQ/SS
Thermal Resistance
(θJC) ST/SN/UA/SQ/SS
Package Power Dissipation, (PD) ST/SN/UA/SQ/SS
Values
7
7
-0.3
Unlimited
1
Unit
V
V
V
Gauss
mA
-40 to +85
-65 to +150
150
310/540/206/540/540
223/390/148/390/390
400/230 /606/230/230
℃
℃
℃
℃/W
℃/W
mW
Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability.
Electrical Specifications
DC Operating Parameters：Ta=25℃, VDD=1.8V
Parameters
Test Conditions
Supply Voltage, (VDD)
Supply Current, (IDD)
Output Leakage
Current,(I
off)
Output High
Voltage, (VOH)
Operating
Awake State
Sleep State
Average
Output off
Min
Typ
Max
Units
1.4
3.6
5
6
3
7
10
1
Volts
mA
μA
μA
uA
1.65
IOUT=0.5mA(Source)
Output Low Voltage, (VOL)
Awake mode time, (Taw)
IOUT=0.5mA(Sink)
Operating
Sleep mode time, (TSL)
Operating
Duty Cycle, (D,C)
Electro-Static Discharge
HBM
VDD-0.2
V
0.2
V
40
80
uS
40
80
mS
0.1
4
%
KV
Typical application circuit
C1：10nF
C2：100pF
082118
Page 3 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
MH254EST/UA/SQ/SS Magnetic Specifications
DC Operating Parameters：Ta=25℃, VDD=2.0V
Parameter
Symbol
Test Conditions
Min.
Typ.
Operating Point
BOP
N pole to branded side, B > BOP, Vout On
Release Point
BRP
N pole to branded side, B < BRP, Vout Off
-20
Hysteresis
BHY
|BOPx - BRPx|
10
-50
Max.
Units
Gauss
-30
Gauss
-10
Gauss
MH254ESN Magnetic Specifications
DC Operating Parameters：Ta=25℃, VDD=2.0V
Parameter
Symbol
Test Conditions
Min.
Operating Point
BOP
S pole to branded side, B > BOP, Vout On
Release Point
BRP
S pole to branded side, B < BRP, Vout Off
Hysteresis
BHY
|BOPx - BRPx|
10
Typ.
Max.
Units
30
50
Gauss
20
Gauss
10
Gauss
MH254EST/SQ/SS/SN/UA Output Behavior versus Magnetic Polar
DC Operating Parameters：Ta = -40 to 85℃, VDD =1.65V to 6V
Test
OUT
Parameter
Parameter
condition
（ST/SS/SQ/UA）
Null or weak
magnetic field
North pole
North Pole
B=0 or B <
BRP
BBop-S
High
Low
South Pole
North Pole
ST Package
SQ Package
SS Package
UA Package
Out (SN)
Out (ST/SQ/SS/UA)
082118
SN Package
South Pole
Page 4 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
Performance Graph
Typical Supply Voltage (VDD) Versus Flux Density
55
Typical Temperature (TA) Versus Flux Density
55
25℃
45
25
25
Flux Density(Gauss）
35
Flux Density(Gauss)
35
15
Bop-S
5
Brp-S
-5
-15
-25
5
-25
-45
5.4
-55
6.0
Typical Supply Voltage (VDD) Versus Flux Density
55.0
-40
BRP- N
15.0
5.0
-5.0
-15.0
-25.0
5.4
BOP -N
BRP -N
5.0
-15.0
-25.0
-55.0
6.0
-40
-20
0
25
40
55
20
3.0V
Sleep Current(uA)
Average Current(uA)
Awarke Current(mA)
18
16
14
Current Consumption
14
85
Typical Supply Voltage(VDD) Versus Supply current current(IDD)
20
16
70
Temperature(℃)
Typical Temperature(TA) Versus Supply Current(IDD)
18
85
-5.0
-45.0
3.0 3.6 4.2
4.8
Supply Voltage(V)
70
15.0
-35.0
2.3
55
3V
25.0
-45.0
11.65
40
45.0
-35.0
-55.0
20
Temperature(℃)
55.0
Flux Density(Gauss)
BOP- N
25.0
Current Consumption
0
35.0
35.0
12
Sleep Current(uA)
Average Current(uA)
Awarke Current(mA)
25℃
12
10
10
8
6
4
2
8
6
4
2
0
-40
-20
0
25
40
55
70
85
Temperature(℃)
082118
-20
Typical Temperature (TA) Versus Flux Density
25℃
45.0
Brp-S
-15
-45
3.0 3.6 4.2
4.8
Supply Voltage(V)
Bop-S
-5
-35
11.65 2.3
Flux Density(Gauss)
15
-35
-55
3V
45
Page 5 of 17
0
11.65 2.5
3.0 3.5 4.0 4.5
Supply Voltage(V)
5.0
6.0
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
Typical Supply Voltage(VDD) Versus Output Voltage(VDSON)
250.0
25℃
25℃
Output Saturation Voltage (mV)
Output Saturation Voltage (mV)
250.0
Typical Temperature (TA) Versus Output Voltage(VDSON)
200.0
150.0
100.0
50.0
200.0
150.0
100.0
50.0
0.0
0.0
11.65 2.3
3.0 3.6 4.2 4.8
Supply Voltage(V)
5.4
-40
6.0
0.035
0.030
0.025
0.020
0.015
0.010
55
70
85
UA Package
600
R
θja
= 206℃/w
ST/SQ Package
500
R
θja
= 310℃/w
400
300
200
SN Package
100
Rθja = 540℃/w
0.005
0
0.000
082118
40
700
Package power Dissipation(mW)
Output Leakage Current(uA)
0.040
11.65
20
Power Dissipation versus Temperature(TA)
25℃
0.045
0
Temperature(℃)
Typical Supply Voltage (VDD) Versus Leakage Current(IOFF)
0.050
-20
2.3
3
3.6
4.2 4.8
Supply Voltage(V)
5.4
6.0
Page 6 of 17
-40
0
40
80
Temperature(℃)
120
160
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
Package Power Dissipation
The power dissipation of the Package is a function of the pad size. This can vary from the minimum
pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the
thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the
values provided on the data sheet for the package, PD can be calculated as follows:
PD =
TJ(max) - Ta
R j a
The values for the equation are found in the maximum ratings table on the data sheet. Substituting
these values into the equation for an ambient temperature Ta of 25°C, one can calculate the power
dissipation of the device which in this case is 400 milliwatts.
PD(ST) =
150C - 25C
= 400mW
310C/ W
The 310℃/W for the SN package assumes the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of 400 milliwatts. There are other alternatives to
achieving higher power dissipation from the Package. Another alternative would be to use a ceramic
substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad,
an aluminum core board, the power dissipation can be doubled using the same footprint.
Sensor Location, package dimension and marking
MH254 Package
ST Package(TSOT-23)
(Top View)
Hall Plate Chip Location
(Bottom view)
3
0.80
2
Hall Sensor
Location
1
1.45
NOTES:
1.
PINOUT (See Top View at left:)
Pin 1
VDD
Pin 2
Output
Pin 3
GND
2. Controlling dimension: mm;
082118
Page 7 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
SS Package (DFN 1.0*1.0)
NOTES:
1. Controlling dimension: mm
2. Leads must be free of flash and plating voids
3. Lead thickness after solder plating will be
0.254mm maximum
4. PINOUT:
Pin No.
Pin Name
Function
1
VDD
Power Supply
2
GND
Ground
3
SPD
4
VOUT
Output
5. (For reference only)Land Pattern
SN Package (SOT-553)
(Top View)
Hall Plate Chip Location
(Top View)
0.80
5
4
0.60
1
2.
082118
3
Hall Sensor
Location
NOTES:
1.
2
PINOUT (See Top View at left:)
Pin 1
NC
Pin 2
GND
Pin 3
NC
Pin 4
VDD
Pin 5
Out
Controlling dimension: mm;
Page 8 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
SQ Package (QFN2020-3)
Hall Plate Chip Location
(Top view)
1
NOTES:
3. PINOUT (See Top View at left)
Pin 1
VDD
Pin 2
Output
1
Pin 3
GND
4. Controlling dimension: mm;
5. Chip rubbing will be 10mil
Hall Sensor
Location
maximum;
6. Chip must be in PKG. center.
UA Package (TO-92S)
3
1
2
Hall Chip location
2.00
0.9
Hall Sensor
Location
Mark
Output Pin Assignment
NOTES:
(Top view)
1).Controlling dimension: mm
2).Leads must be free of flash
and plating voids
3).Do not bend leads within 1 mm
of lead to package interface.
4).PINOUT:
082118
Pin 1
VDD
Pin 2
GND
Pin 3
Output
Page 9 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
MH254 UA(TO-92S) Package Date Code
XXX
Year
Week
EX：2018 Year_8 Week →808
MH 254EST/ESN/ESQ Package Date Code
XX
Week Code
week
1
2
3
4
5
6
7
8
9
10
11
12
13
code
AA
AB
AC
AD
AE
AF
AG
AH
AI
AJ
AK
AL
AM
week
14
15
16
17
18
19
20
21
22
23
24
25
26
code
AN
AO
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
week
27
28
29
30
31
32
33
34
35
36
37
38
39
code
BA
BB
BC
BD
BE
BF
BG
BH
BI
BJ
BK
BL
BM
week
40
41
42
43
44
45
46
47
48
49
50
51
52
BP
BQ
BR
code BN BO
EX：2018 Year_8 Week → AH
BS
BT
BU
BV
BW
BX
BY
BZ
082118
Page 10 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
TSOT- 23 package Tape On Reel Dimension
NOTES:
1. Material: Conductive polystyrene;
2. DIM in mm;
3. 10 sprocket hole pitch cumulative tolerance
±0.2;
4. Camber not to exceed 1mm in 100mm;
5. Pocket position relative to sprocket hole
measured as true position of pocket, not
pocket hole;
6. (S.R. OHM/SQ) Means surface electric
resistivity of the carrier tape.
082118
Page 11 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
SOT-553 Tape On Reel Dimension
NOTES:
1.
Material: Conductive polystyrene;
2.
DIM in mm;
3.
10 sprocket hole pitch cumulative
tolerance ±0.2;
4.
Camber not to exceed 1mm in 100mm;
5.
Pocket position relative to sprocket hole
measured as true position of pocket, not
pocket hole;
6.
(S.R. OHM/SQ) Means surface electric
resistivity of the carrier tape.
082118
Page 12 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
QFN2020-3 Tape On Reel Dimension
NOTES:
1.
2.
3.
4.
5.
6.
082118
Page 13 of 17
Material: Conductive polystyrene;
DIM in mm;
10 sprocket hole pitch cumulative
tolerance ±0.2;
Camber not to exceed 1mm in 100mm;
Pocket position relative to sprocket
hole measured as true position of
pocket, not pocket hole;
(S.R. OHM/SQ) Means surface
electric resistivity of the carrier tape.
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
SS (DFN 1.0x1.0-4) Tape On Reel Dimension
NOTES:
10 sprocket hole pitch cumulative tolerance is ±0.1mm;
Pocket position relative to sprocket hole measured as true position of pocket,
not pocket hole;
9. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top
surface of the carrier.
10. Ko measured from a plane on the inside bottom of the pocket to the top
surface of the carrier.
11. Carrier camber shall be not than 1mm per 100mm through a length of 250m.
7.
8.
082118
Page 14 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
IR reflow curve
ST/SN/SS/SQ Soldering Condition
082118
Page 15 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
UA Soldering Condition
Packing specification:
Package
Bag
Box
Carton
TSOT-23(ST)
3,000pcs/reel
10 reel/box
2 box/carton
SOT-553(SN)
3,000pcs/reel
10 reel/box
2 box/carton
TO-92S-3L(UA)
1,000pcs/bag
10bag/box
10 box/carton
QFN2020-3(SQ)
3,000pcs/reel
10 reel/box
2 box/carton
SS(DFN1.0x1.0)
8,000pcs/reel
5reel/box
12 box/carton
TSOT-23-3L
Weight
SOT-553(SN)
Weight
TO-92S-3L(UA)
Weight
3000pcs/reel
0.18kg
3000pcs/reel
0.13kg
1000pcs/bag
0.11kg
10 reels/box
1.99kg
10 reels/box
1.40kg
10bags/box
1.24kg
2 boxes/carton
4.9kg
2 boxes/carton
3.70kg
10 boxes/carton
12.57kg
082118
QFN2020-3(SQ)
Weight
SS(DFN1.0x1.0)
Weight
3000pcs/reel
0.13kg
8,000pcs/reel
0.11kg
10 reels/box
1.40kg
5 reels/box
0.66kg
2 boxes/carton
3.70kg
12boxes/carton
8.72kg
Page 16 of 17
Rev. 1.07
MH254
Micro-power CMOS Unipolar Hall Effect Switch
ST/SN/SQ/SS Package Inner box label：Size:3.4cm*6.4cm
Bag and inner box Halogen Free Label
ST/SN/SQ/SS Carton label：Size:5.6cm* 9.8cm
Bag and inner box Halogen Free Label
UA Package Inner box label：Size:3.4cm*6.4cm
Bag and inner box Halogen Free Label
UA Carton label：Size:5.6cm* 9.8cm
Bag and inner box Halogen Free Label
Combine:
When combine lot, one reel could have two D/C and no more than two DC. One carton could have
two devices, no more than two;
082118
Page 17 of 17
Rev. 1.07
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