MXD8546
X-DPDT Switch for 0.4~3.8G Application
VED
APPRO
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Company Limited (Maxscend) and may not be reproduced in any form without express written consent of
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MXD8546 – X-DPDT Switch for 0.4~3.8G Application
General Description
Applications
The MXD8546 is a CMOS, Silicon-On-Insulator
(SOI) double-pole, double-throw (DPDT) switch.
The switch provides high linearity performance, low
insertion loss and high isolation.
Simultaneous voice and LTE systems
Diversity antenna switching
Switching is controlled by one control voltage,V1.
Depending on the logic voltage level applied to this
pin, the RF1 and RF2 pins connect to one of the
two other RF port pins (RF3 or RF4) through a low
insertion loss path, while maintaining a high
isolation path to the alternate port. No external DC
blocking capacitors are required on the RF path as
long as no DC voltage is applied externally.
Single control voltage input
Broadband frequency range: 0.4 to 3.8 GHz
Low insertion loss: 0.55 dB @ 2.7 GHz
P0.1dB of 37dBm
No DC blocking capacitors required
Positive control voltage range: 1.8 to 3.3 V
The MXD8546 DPDT switch is provided in a
compact Quad Flat No-Lead (QFN) 1.83 x 1.83 mm
package. A functional block diagram is shown in
Figure 1. The pin configuration and package are
shown in Figure 2. Signal pin assignments and
functional pin descriptions are provided in Table 1.
Small, QFN (12-pin, 1.83 x 1.83 mm) package
Features
Functional Block Diagram and Pin Function
VDD
2
GND
RF2
1
RF1
RF3
GND
12
11
10
RF3
RF4
RF1
V1
4
5
6
RF4
3
GND
Figure 1. Functional Block Diagram
GND
9
GND
8
RF2
7
GND
Figure 2. Pin Diagram
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MXD8546 – X-DPDT Switch for 0.4~3.8G Application
Application Circuit
RF1
GND
VDD
RF1
GND
VDD
RF3
RF3
GND
MXD8546
GND
V1
V1
RF2
GND
RF4
RF2
GND
RF4
Figure 3. MXD8546 Evaluation Board Schematic
Table 1. Pin Description
Pin No.
Name
Description
Pin No.
Name
Description
1
2
3
4
5
6
GND
VDD
GND
V1
GND
RF4
Ground.
DC power supply
Ground.
DC control voltage 1.
Ground.
RF port 4
7
8
9
10
11
12
GND
RF2
GND
RF3
GND
RF1
Ground.
RF port 2
Ground.
RF Port 3
Ground.
RF port 1
Note: Bottom ground paddles must be connected to ground.
Table 2. Truth Table
V1
1
0
State
Note: “1” = 1.8 to 3.1 V, “0” = –0.20 to +0.45 V;
Any state other than described in this Table places the switch into an undefined state.
RF3 to RF1,RF4 to RF2
RF3 to RF2, RF4 to RF1
Recommended Operation Range
Table 3.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
Min
Typ
Max
f1
0.4
1.8
1.5
-0.2
2.8
1.8
0
3.8
3.3
3.3
0.4
VDD
VCTL_H
VCTL_L
Units
GHz
V
V
V
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MXD8546 – X-DPDT Switch for 0.4~3.8G Application
Specifications
Table 4. Electrical Specifications
Parameter
Symbol
DC Specifications
Control voltage:
Low
High
Supply voltage
Supply current
VCTL_L
VCTL_H
VDD
IDD
Control current
Specification
Min.
Typical
Max.
0
1.5
1.8
Units
Test Condition
0
1.8
2.8
60
0.3
3.3
3.3
85
V
V
V
1
5
μA
VCTL= 1.8 V
ISO
40
36
32
26
0.45
0.50
0.55
0.70
45
40
35
28
dB
dB
dB
dB
dB
dB
dB
dB
0.7 to 1.0 GHz
1.0 to 2.2 GHz
2.5 to 2.7 GHz
3.4 to 3.8 GHz
0.7 to 1.0 GHz
1.0 to 2.2 GHz
2.5 to 2.7 GHz
3.4 to 3.8 GHz
RL
15
20
dB
0.7 to 3.8 GHz
P0.1dB
+37
dBm
0.7 to 3.8 GHz
2fo
-50
dBm
3fo
-50
dBm
ICTL
VDD = 2.8 V
RF Specifications
Insertion loss (RF1/RF2
to RF3/RF4)
Isolation (RF1/RF2 to
RF3/RF4, RF1 to RF2,
RF3 to RF4)
Input return loss
(RF1/RF2 to RF3/RF4)
0.1 dB Compression
Point (RF1/RF2 to
RF3/RF4)
2nd Harmonic (RF1/RF2
to RF3/RF4)
3rd Harmonic(RF1/RF2
to RF3/RF4)
Switching on time
IL
fo = 824 to 915 MHz, PIN = +35
dBm
2
5
μs
50% VCTL to 90% RF
Switching off time
2
5
μs
Startup time
10
50% VCTL to 10% RF
Power off state to any RF
switch state
μs
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Symbol
Minimum
Maximum
Units
Supply voltage
Digital control voltage
RF input power
Operating temperature
VDD
VCTL
PIN
TOP
+1.8
-0.3
V
V
dBm
–30
+3.6
+3.3
+40
+85
Storage temperature
TSTG
–55
+150
℃
Electrostatic Discharge
Human body model (HBM),
Class 2
Machine Model (MM),
Class B
Charged device model
(CDM), Class III
ESD_HBM
2000
ESD_MM
200
ESD_CDM
500
℃
V
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device
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MXD8546 – X-DPDT Switch for 0.4~3.8G Application
Package Outline Dimension
Figure 4. package outline dimension
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MXD8546 – X-DPDT Switch for 0.4~3.8G Application
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
TSmax
tL
TSmin
Ramp-down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 5. Recommended Lead-Free Reflow Profile
Table 6 Reflow condition
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate(TSmax to Tp)
3℃/second max.
Preheat temperature(TSmin to TSmax)
150℃ to 200℃
Preheat time(ts)
60 - 180 seconds
Time above TL , 217℃(tL)
60 - 150 seconds
Peak temperature(Tp)
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
1.4.1
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