MXD8650
DP4T Switch for 3G/4G and Diversity Application
VED
APPRO
This document contains information that is confidential and proprietary to Maxscend Technologies Inc.
(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No
transfer or licensing of technology is implied by this document.
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MXD8650 DP4T Switch for 3G/4G and Diversity Application
General Description
Features
MXD8650 is a general purpose DP4T for 3G/4G
and diversity application.
Advanced SOI Process
Frequency Range : 0.1 ~ 3.0 GHz
The device is processed in advanced CMOS
silicon-on-insulator (SOI) technology featuring low
insertion loss, high isolation, high linearity and
high ESD protection level. The excellent
performance makes it ideal to be applied in
application for 3G/4G multi-mode WCDMA, UMTS,
and LTE.
Low Control Voltage : 1.6 ~ 3.3 V
Low Insertion Loss : 0.4 dB at 2.7 GHz
High Isolation : 20 dB at 3.0 GHz
RoHS / Halogen Free Compliant
Moisture Sensitivity Level : MSL-1
The MXD8650 is packaged in small, ultra-thin, 10
pins, 0.4mm pitch (1.1 x 1.5 x 0.45 mm) package.
Applications
Cellular Handset Applications
Cellular Modems and USB devices
3G/4G WCDMA and LTE Applications
Functional Block Diagram and Pin Function
Figure 1. Functional Block Diagram
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Application Circuit
Figure 2. MXD8650 Pin Diagram
Note:
1. Recommend:
a) C1 =33pF
b) C2=1uF
Table 1. Pin Description
Pin No.
1
2
3
4
5
Name
Port3_P
GND
GND
Port2_N
Port2_P
Pin No.
6
7
8
9
10
Name
CTRL
Port1_P
Port1_N
VDD
Port3_N
Truth Table
Table 2.
Insertion Loss Path
Port1-Port2
Port1-Port3
CTRL
0
1
Note: “0” = 0 ~ 0.4 V, “1” = 1.6 ~ 3.3 V
Recommended Operation Range
Table 3. Recommended Operation Range
Parameters
Operation Frequency
Power supply
Switch Control Voltage (H)
Switch Control Voltage (L)
Symbol
Min
Typ
Max
Units
f1
VDD
VH
VL
0.1
2.0
1.6
0
2.8
2.8
0
3.0
3.3
3.3
0.4
GHz
V
V
V
Page 3 of 9
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Specifications
Table 4. Electrical Specifications
Specification
Min. Typ. Max.
Parameter
Unit
Condition
Nominal conditions unless otherwise stated.
UMTS-Low Band
VDD = 2.8 V, VHIGH/VLOW = 1.8 V/0 V,
Temp = 25°C, 50 Ω
Frequency Range
824
960
MHz
Insertion Loss
Port2_N to Port1_N
0.25
dB
Port2_P to Port1_P
0.25
dB
Port3_N to Port1_N
0.25
dB
Port3_P to Port1_P
0.25
dB
824MHz to 960MHz
Isolation
Port2_N - Port1_N
25
dB
Port2_N - Port1_N
25
dB
Port2_P - Port1_N
25
dB
Port2_N - Port1_P
25
dB
Port2_P - Port1_P
25
dB
Port2_N - Port3_N
25
dB
Port2_P - Port3_N
25
dB
Port2_N - Port3_P
25
dB
Port2_P - Port3_P
25
dB
Port3_N - Port1_N
25
dB
Port3_P - Port1_N
25
dB
Port3_N - Port1_P
25
dB
Port3_P - Port1_P
25
dB
Port3_N - Port2_N
25
dB
Port3_P - Port2_N
25
dB
Port3_N - Port2_P
25
dB
Port3_P - Port2_P
25
dB
824MHz to 960MHz; Port3 to Port1 active
824MHz to 960MHz; Port2 to Port1 active
Balanced Isolation
Port3_N/P - Port1_N/P
Port2_N/P - Port1_N/P
40
40
42
dB
44
dB
TX = 450MHz to 960MHz,
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 450MHz to 960MHz,
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
Harmonics
Ports 2 or 3 to Port 1 ( 2fo )
90
85
dBc
Ports 2 or 3 to Port 1 ( 3fo )
90
85
dBc
85
83
dBc
-1
0
+1
Deg.
Between active paths; Test frequency 960MHz
-1
0
+1
dB
Between active paths; Test frequency 960MHz
Port2 or Port3
1.5
:1
Port1
1.5
:1
Ports 2 or 3 to Port 1 ( 4fo to
12.75GHz )
TX = 824 to 960MHz, CW, Pin = 20dBm, 50 ohm
Phase Balance
Amplitude Balance
VSWR
824MHz to 960MHz
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Specification
Min. Typ. Max.
Parameter
Unit
Condition
Nominal conditions unless otherwise stated.
UMTS-High Band
VDD = 2.8 V, VHIGH/VLOW = 1.8 V/0 V,
Temp = 25°C, 50 Ω
Frequency Range
1710
2690
MHz
Insertion Loss
Port2_N to Port1_N
0.4
Port2_P to Port1_P
0.4
Port3_N to Port1_N
0.4
Port3_P to Port1_P
0.4
dB
1710MHz to 2690MHz
Isolation
Port2_N - Port1_N
20
dB
Port2_N - Port1_N
20
dB
Port2_P - Port1_N
20
dB
Port2_N - Port1_P
20
dB
Port2_P - Port1_P
20
dB
Port2_N - Port3_N
20
dB
Port2_P - Port3_N
20
dB
Port2_N - Port3_P
20
dB
Port2_P - Port3_P
20
dB
Port3_N - Port1_N
20
dB
Port3_P - Port1_N
20
dB
Port3_N - Port1_P
20
dB
Port3_P - Port1_P
20
dB
Port3_N - Port2_N
20
dB
Port3_P - Port2_N
20
dB
Port3_N - Port2_P
20
dB
Port3_P - Port2_P
20
dB
1710MHz to 2690MHz; Port3 to Port1 active
1710MHz to 2690MHz; Port2 to Port1 active
Balanced Isolation
Port3_N/P - Port1_N/P
33
34
dB
Port2_N/P - Port1_N/P
35
36
dB
Port3_N/P - Port1_N/P
34
35
dB
Port2_N/P - Port1_N/P
37
38
dB
TX = 2170MHz to 2690MHz,
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 2170MHz to 2690MHz z,
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
TX = 1710MHz to 2170MHz z,
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 1710MHz to 170MHz z,
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
Ports 2 or 3 to Port 1 ( 2fo )
90
85
dBc
Ports 2 or 3 to Port 1 ( 3fo )
90
85
dBc
85
83
dBc
-1
0
+1
Deg.
Between active paths; Test frequency 2GHz
-1
0
+1
dB
Between active paths; Test frequency 2GHz
Port2 or Port3
1.5
:1
Port1
1.5
:1
Ports 2 or 3 to Port 1 ( 4fo to
12.75GHz )
TX = 1710MHz to 2570MHz, CW, Pin = 20dBm, 50 ohm
Phase Balance
Amplitude Balance
VSWR
1710MHz to 2690MHz
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Specification
Min. Typ. Max.
Parameter
Unit
Condition
Nominal conditions unless otherwise stated.
LTE-Low Band
VDD = 2.8 V, VHIGH/VLOW = 1.8 V/0 V,
Temp = 25°C, 50 Ω
Frequency Range
698
792
MHz
Insertion Loss
Port2_N to Port1_N
0.3
dB
Port2_P to Port1_P
0.3
dB
Port3_N to Port1_N
0.3
dB
Port3_P to Port1_P
0.3
dB
698MHz to 792MHz
Isolation
Port2_N - Port1_N
25
dB
Port2_N - Port1_N
25
dB
Port2_P - Port1_N
25
dB
Port2_N - Port1_P
25
dB
Port2_P - Port1_P
25
dB
Port2_N - Port3_N
25
dB
Port2_P - Port3_N
25
dB
Port2_N - Port3_P
25
dB
Port2_P - Port3_P
25
dB
Port3_N - Port1_N
25
dB
Port3_P - Port1_N
25
dB
Port3_N - Port1_P
25
dB
Port3_P - Port1_P
25
dB
Port3_N - Port2_N
25
dB
Port3_P - Port2_N
25
dB
Port3_N - Port2_P
25
dB
Port3_P - Port2_P
25
dB
698MHz to 792MHz; Port3 to Port1 active
698MHz to 792MHz; Port2 to Port1 active
Balanced Isolation
Port3_N/P - Port1_N/P
Port2_N/P - Port1_N/P
40
42
dB
dB
TX = 450MHz to 960MHz,
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 450MHz to 960MHz,
40
44
-1
0
+1
Deg.
Between active paths; Test frequency 792MHz
-1
0
+1
dB
Between active paths; Test frequency 792MHz
Port2 or Port3
1.5
:1
Port1
1.5
:1
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
Phase Balance
Amplitude Balance
VSWR
698MHz to 792MHz
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Specification
Min. Typ. Max.
Parameter
Unit
Condition
Nominal conditions unless otherwise stated.
LTE-High Band
VDD = 2.8 V, VHIGH/VLOW = 1.8 V/0 V,
Temp = 25°C, 50 Ω
Frequency Range
2300
2690
MHz
Insertion Loss
Port2_N to Port1_N
0.4
dB
Port2_P to Port1_P
0.4
dB
Port3_N to Port1_N
0.4
dB
Port3_P to Port1_P
0.4
dB
2300MHz to 2690MHz
Isolation
Port2_N - Port1_N
20
dB
Port2_N - Port1_N
20
dB
Port2_P - Port1_N
20
dB
Port2_N - Port1_P
20
dB
Port2_P - Port1_P
20
dB
Port2_N - Port3_N
20
dB
Port2_P - Port3_N
20
dB
Port2_N - Port3_P
20
dB
Port2_P - Port3_P
20
dB
Port3_N - Port1_N
20
dB
Port3_P - Port1_N
20
dB
Port3_N - Port1_P
20
dB
Port3_P - Port1_P
20
dB
Port3_N - Port2_N
20
dB
Port3_P - Port2_N
20
dB
Port3_N - Port2_P
20
dB
Port3_P - Port2_P
20
dB
2300MHz to 2690MHz; Port3 to Port1 active
2300MHz to 2690MHz z; Port2 to Port1 active
Balanced Isolation
TX = 2170MHz to 2690MHz,
Port3_N/P - Port1_N/P
33
34
dB
Port2_N/P - Port1_N/P
35
36
dB
Port3_N/P - Port1_N/P
34
35
dB
Port2_N/P - Port1_N/P
37
38
dB
-1
0
+1
Deg.
Between active paths; Test frequency 2690MHz
-1
0
+1
dB
Between active paths; Test frequency 2690MHz
Port2 or Port3
1.5
:1
Port1
1.5
:1
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 2170MHz to 2690MHz z,
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
TX = 1710MHz to 2170MHz z,
Port2 to Port1 path active, Port2_N/P terminated in 50 Ω
TX = 1710MHz to 170MHz z,
Port3 to Port1 path active, Port3_N/P terminated in 50 Ω
Phase Balance
Amplitude Balance
VSWR
2300MHz to 2690MHz
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Power supply (VDD)
Control voltage (V1)
Maximum Input Power
Operation Temperature Range
Junction Temperature
Storage temperature Range
Soldering Temperature (reflow)
Human Body Mode ESD
Machine Mode ESD
Charge Device Mode ESD
Range
2.0 ~ 3.3
1.6 ~ 3.3
+30
-40~85
150
-65~160
260
-1200~+1200
-100~+100
-500~+500
Units
V
V
dBm
℃
℃
℃
℃
V
V
V
Package Outline Dimension
Figure 3. package outline dimension
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MXD8650 DP4T Switch For 3G/4G and Diversity Application
Reflow Chart
tP
TP
Critical Zone
TL to TP
Ramp‐up
Temperature
TL
TSmax
tL
TSmin
Ramp‐down
tS
Preheat
t 25 ℃ to Peak
Time
Figure 4. Recommended Lead-Free Reflow Profile
Table 6. Reflow condition
Profile Parameter
Ramp-up rate(TSmax to Tp)
Preheat temperature(TSmin to TSmax)
Preheat time(ts)
Time above TL , 217℃(tL)
Peak temperature(Tp)
Time within 5℃ of peak temperature(tp)
Ramp-down rate
Time 25℃ to peak temperature
Lead-Free Assembly, Convection, IR/Convection
3℃/second max.
150℃ to 200℃
60 - 180 seconds
60 - 150 seconds
260℃
20 - 40 seconds
6℃/second max.
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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