MXD8546F

MXD8546F X-DPDT Switch for 0.4～3.8G Application VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8546F – X-DPDT Switch for 0.4～3.8G Application General Description Applications The MXD8546F is a CMOS, Silicon-On-Insulator (SOI) double-pole, double-throw (DPDT) switch. The switch provides high linearity performance, low insertion loss and high isolation.  Simultaneous voice and LTE systems  Diversity antenna switching Switching is controlled by one control voltage, V1. Depending on the logic voltage level applied to this pin, the RF1 and RF2 pins connect to one of the two other RF port pins (RF3 or RF4) through a low insertion loss path, while maintaining a high isolation path to the alternate port. No external DC blocking capacitors are required on the RF path as long as no DC voltage is applied externally.  Single control voltage input  Broadband frequency range: 0.4 to 3.8 GHz  Low insertion loss: 0.45 dB @ 2.7 GHz  P0.1dB of 38dBm  No DC blocking capacitors required  Positive control voltage range: 1.8 to 3.3 V The MXD8546F DPDT switch is provided in a compact Quad Flat No-Lead (QFN) 2 x 2 mm package. A functional block diagram is shown in Figure 1. The pin configuration and package are shown in Figure 2. Signal pin assignments and functional pin descriptions are provided in Table 1.  Small, QFN (12-pin, 2 x 2 mm) package Features Functional Block Diagram and Pin Function RF3 GND RF2 GND RF3 12 11 10 RF4 RF1 1 9 RF4 N/C 2 8 N/C V1 3 7 RF1 4 5 6 GND RF2 GND Figure 1. Functional Block Diagram VDD Figure 2. Pin Diagram Page 2 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8546F – X-DPDT Switch for 0.4～3.8G Application Application Circuit RF3 GND RF3 GND VDD VDD MXD8546F N/C V1 RF4 RF4 V1 N/C RF1 RF1 GND RF2 GND RF2 Figure 3. MXD8546F Application Circuit Table 1. Pin Description Pin No. Name Description Pin No. Name Description 1 2 3 4 5 6 VDD N/C V1 GND RF2 GND DC power supply No connection DC control voltage 1. Ground. RF port 2 Ground. 7 8 9 10 11 12 RF1 N/C RF4 GND RF3 GND RF port 1 No connection RF Port 4 Ground. RF port 3 Ground. Note: Bottom ground paddles must be connected to ground. Truth Table Table 2. V1 State 1 0 RF3 to RF1,RF4 to RF2 RF3 to RF2, RF4 to RF1 Note: “1” = 1.8 to 3.1 V,“0” = –0.20 to +0.45 V; Any state other than described in this Table places the switch into an undefined state. Recommended Operation Range Table 3. Parameters Operation Frequency Power supply Switch Control Voltage High Switch Control Voltage Low Symbol Min Typ Max f1 0.4 1.8 1.0 0 2.8 1.8 0 3.8 3.3 3.3 0.3 VDD VCTL_H VCTL_L Units GHz V V V Page 3 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8546F – X-DPDT Switch for 0.4～3.8G Application Specifications Table 4. Electrical Specifications Parameter Specification Min. Typical Max. Symbol DC Specifications Control voltage: Low High Supply voltage Supply current VCTL_L VCTL_H VDD IDD Test Condition 0 1.8 2.8 60 0.3 3.3 3.3 85 V V V 1 5 μA VCTL= 1.8 V ISO 28 24 21 16 0.33 0.40 0.45 0.55 31 26 23 18 dB dB dB dB dB dB dB dB 0.7 to 1.0 GHz 1.0 to 2.2 GHz 2.5 to 2.7 GHz 3.4 to 3.8 GHz 0.7 to 1.0 GHz 1.0 to 2.2 GHz 2.5 to 2.7 GHz 3.4 to 3.8 GHz RL 15 20 dB 0.7 to 3.8 GHz P0.1dB +38 dBm 0.7 to 3.8 GHz 2fo -100 -83 dBc 3fo -95 -83 dBc 2 5 μs 50% VCTL to 90% RF Switching off time 2 5 μs Startup time 10 50% VCTL to 10% RF Power off state to any RF switch state Control current 0 1.0 1.8 Units ICTL VDD = 2.8 V RF Specifications Insertion loss (RF1/RF2 to RF3/RF4) IL Isolation (RF1/RF2 to RF3/RF4, RF1 to RF2, RF3 to RF4) Input return loss (RF1/RF2 to RF3/RF4) 0.1 dB Compression Point (RF1/RF2 to RF3/RF4) 2nd Harmonic (RF1/RF2 to RF3/RF4) 3rd Harmonic(RF1/RF2 to RF3/RF4) Switching on time μs fo = 824 to 915 MHz, PIN = +35 dBm Absolute Maximum Ratings Table 5. Maximum ratings Parameters Symbol Minimum Maximum Units Supply voltage Digital control voltage RF input power Operating temperature VDD VCTL PIN TOP +1.8 0 V V dBm –30 +3.3 +3.3 +39 +85 Storage temperature TSTG –55 +150 ℃ Electrostatic Discharge Human body model (HBM), Class 2 Machine Model (MM), Class B Charged device model (CDM), Class III ESD_HBM 2000 ESD_MM 200 ESD_CDM 500 ℃ V Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device Page 4 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8546F – X-DPDT Switch for 0.4～3.8G Application Package Outline Dimension D A J B eee C A B R0.20 PIN 1 I.D. e/2 1 PIN 1 CORNER e E K eee C A B EXPOSED DIE ATTACH PAD aaa 12×L C 12×b ddd M TOP VIEW // bbb BOTTOM VIEW ccc C C A B C C SEATING PLANE M DESCRIPTION SYM BOL M ILLlM ETER M IN NOM M AX TOTALTHlCKNESS A 0.51 0.55 0.60 STAND OFF A1 00. 0 0.02 0.05 L/F THICKNESS EAD WIDTH A3 b 0.15 0.15 Ref 0.20 0.25 X Y D E - - X e J 2.00 BSC 2.00 BSC 0.50 BSC 0.77 0.92 1.02 Y K 0.77 0.92 1.02 L 0.19 0.29 0.05 0.39 BODY SIZE LEAD PITCH EP SIZE LEAD LENGTH PACKAGE EDGE TOLERANCE M OLD FLATNESS aaa bbb COPLANARITY LEAD OFFSET ccc ddd 0.10 0.05 EXPOSED PAD OFFSET eee 0.08 0.10 M A3 A A1 Figure 4. package outline dimension Page 5 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8546F – X-DPDT Switch for 0.4～3.8G Application Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 5. Recommended Lead-Free Reflow Profile Table 6 Reflow condition Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.0.1 Page 6 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential