MXD8626L
SPDT Switch for 3G/4G Application
VED
APPRO
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(Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No
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MXD8626L – SPDT Switch for 3G/4G Application
General Description
Applications
The MXD8626L is a Single-Pole, Double-Throw
GSM/WCDMA/LTE receive
(SPDT) LTE/WCDMA/GSM switch. Switching is
controlled by an integrated GPIO interface with a
Features
single control pin.
Broadband frequency range: 0.7 to 2.7 GHz
Low insertion loss: 0.45 dB @ 2.7 GHz
High isolation: 25 dB up to 2.7 GHz
P0.1dB >29dBm
No external DC blocking capacitors required
Single GPIO control line with VDD voltage
No external DC blocking capacitors are required
as long as no DC voltage is applied on any RF
path.
The MXD8626L is provided in a compact 1.1mm x
regulator:
0.7mm x 0.45mm 6-lead LGA package that meets
VCTL= 1.6 to 3.00 V
requirements for board-level assembly.
A
functional
block
diagram
and
VDD= 2.5 to 3.00 V
the
pin
configuration are shown in Figure 1.
Small, 6-Lead LGA, 400 um pitch (1.1mm x
0.7mmx 0.45 mm) package
Functional Block Diagram and Pin Function
Figure 1.Functional Block Diagram and Pin-out
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MXD8626L -- SPDT Switch for 3G/4G Application
Application Circuit
Figure 2. MXD8626L Application Circuit
Note: C1 = 100pF
Table 1. Pin Description
Pin No.
1
2
3
Name
V1
GND
VDD
Description
Digital control input
Ground
Power supply
Pin No.
4
5
6
Name
RF2
ANT
RF1
Description
RF I/O. Throw 2 of the switch.
Antenna
RF I/O. Throw 1 of the switch.
Truth Table
Table 2.
State
0
1
Active Path
ANT to RF1
ANT to RF2
V1 (Bump B1)
0
1
Note: “1” = 1.6 V to 3.00 V. “0” = 0 V to +0.3 V.
Recommended Operation Range
Table 3.
Parameters
Operation Frequency
Power supply
Switch Control Voltage High
Switch Control Voltage Low
Symbol
Min
Typ
Max
f1
0.1
2.5
1.6
0
2.8
1.8
0
3.0
3.0
3.0
0.3
VDD
VCTL_H
VCTL_L
Units
GHz
V
V
V
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MXD8626L -- SPDT Switch for 3G/4G Application
Specifications
Table 4.Electrical Specifications
Parameter
Symbol
Min.
Specification
Typical
Max.
Units
Test Condition
DC Specifications
Supply voltage
Control voltage:
Low
High
Current on V1
pin
Supply current
VDD
2.5
2.8
3.0
V
VCTL_L
VCTL_H
0
+1.6
0
+1.8
+0.3
+3.0
V
V
5
μA
60
μA
10
μs
2
μs
20
mVpp
ICTL
IDD
45
DC supply turnon/turn-off time
ton
RF path
switching time
tsw
Supply ripple
VPP
RF Specifications
Insertion loss
(RF1 or RF2 to
ANT pin)
IL
Isolation (ANT to
RF1 or RF2)
Voltage Standing
Wave Ratio, all
ports
0.1dB
compression
point (from
antenna to RF1
and RF2)
1
ISO
35
28
23
VSWR
0.35
0.38
0.45
40
30
25
1.25:1
dB
dB
dB
dB
dB
dB
1.5:1
29
-
dBm
VDD= 2.8 V, V1 = VCTL_H
Measured from 50% of final VDD
supply voltage to 90% of final RF
power
From one active state to another
active state transition, measured
from 50% of final control voltage to
90% of final RF power
700 to 960 MHz
1710 to 2170 MHz
2170 to 2690 MHz
700 to 960 MHz
1710 to 2170 MHz
2170 to 2690 MHz
Referenced to 50 Ω,
700 to 2690 MHz
700 to 2690 MHz
Absolute Maximum Ratings
Table 5. Maximum ratings
Parameters
Symbol
Minimum
Maximum
Supply voltage
Digital control voltage
RF input power
Operating temperature
Storage temperature
Electrostatic
discharge:
Human Body Model
(HBM), Class 1C
Machine Model (MM),
Class A
VDD
VCTL
PIN
TOP
TSTG
+2.5
0
+3.0
+3.0
+29
+85
+150
V
V
dBm
℃
℃
1000
V
100
V
–30
–55
ESD
Units
Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with
only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed
here may result in permanent damage to the device.
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MXD8626L -- SPDT Switch for 3G/4G Application
Package Outline Dimension
ALL DIMENSIONS ARE IN MILLIMETERS.
SYMBOL
A
A2
A3
e
D
E
aaa
ccc
MIN.
0.40
0.09
0.31
0.35
0.65
1.05
MILLIMETER
NOR.
0.45
0.12
0.33
0.40
0.70
1.10
0.10
MAX.
0.50
0.15
0.35
0.45
0.80
1.15
0.05
Figure 3. Package outline dimension
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MXD8626L -- SPDT Switch for 3G/4G Application
Reflow Chart
Figure 4. Recommended Lead-Free Reflow Profile
Table 6.
Profile Parameter
Lead-Free Assembly, Convection, IR/Convection
Ramp-up rate(TSmax to Tp)
3℃/second max.
Preheat temperature(TSmin to TSmax)
150℃ to 200℃
Preheat time(ts)
60 - 180 seconds
Time above TL , 217℃(tL)
60 - 150 seconds
Peak temperature(Tp)
260℃
Time within 5℃ of peak temperature(tp)
20 - 40 seconds
Ramp-down rate
6℃/second max.
Time 25℃ to peak temperature
8 minutes max.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD
protection techniques should be used when handling these devices.
RoHS Compliant
This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls
(PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant.
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