MH253EUA

MH253 Specifications High Sensitivity Omni-Polar Hall Effect Switch MH253 Hall-effect sensor is a temperature stable, stress-resistant switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH253 includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, open-drain output. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. MH253 is rated for operation between the ambient temperatures –40℃ and +85℃ for the E temperature range. The four package styles available provide magnetically optimized solutions for most applications. Package types SO is an SOT-23(1.1 mm nominal height), SQ is an QFN2020-3(0.55 mm nominal height), a miniature low-profile surface-mount package, while package UA is a three-lead ultra mini SIP for through-hole mounting. The package type is in a Halogen Free version was verified by third party Lab. Features and Benefits          CMOS Hall IC Technology Solid-State Reliability much better than reed switch Omni polar output switches with absolute value of North or South pole from magnet Low power consumption(2.6mA) High Sensitivity for reed switch replacement 100% tested at 125℃ for K. Small Size ESD HBM ±4KV Min COST competitive Applications          091713 Solid state switch Lid close sensor for power supply devices Magnet proximity sensor for reed switch replacement in high duty cycle applications. Safety Key on sporting equipment Revolution counter Speed sensor Position Sensor Rotation Sensor Safety Key Page 1 of 5 Rev. 1.04 MH253 Specifications High Sensitivity Omni-Polar Hall Effect Switch Ordering Information XXXXXXXXX - X Company Name and Product Category MH:MST Hall Effect/MP:MST Power IC Part number Sorting Code Package type 181,182,183,184,185,248,249,276,477,381,381F,381R,382….. If part # is just 3 digits, the forth digit will be omitted. Temperature range Temperature Code Part number E: 85 ℃, I: 105 ℃, K: 125 ℃, L: 150 ℃ Package type UA:TO-92S,VK:TO-92S(4pin),VF:TO-92S(5pin),SO:SOT-23, Company Name and Product Category SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin), SS:TSOT-26,SD:DFN-6,SG:SOT-89(3pin) Sorting α,β,Blank….. Part No. MH253KUA MH253EUA MH253ESO MH253ESQ Temperature Suffix K (-40℃ to + 125℃) E (-40℃ to + 85℃) E (-40℃ to + 85℃) E (-40℃ to + 85℃) Package Type UA (TO-92S) UA (TO-92S) SO (SOT-23) SQ (QFN2020-3) Custom sensitivity selection is available by MST sorting technology Functional Diagram VDD Out Voltage Regulator Amp Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. 091713 Page 2 of 5 Rev. 1.04 MH253 Specifications High Sensitivity Omni-Polar Hall Effect Switch Absolute Maximum Ratings At (Ta=25℃) Characteristics Values Unit Supply voltage,(VDD) 7 V Output Voltage,(Vout) 6 V -0.3 V Unlimited Gauss 25 mA “E” version -40 to +85 ℃ “K” version -40 to +125 ℃ Storage temperature range, (Ts) -55 to +150 ℃ Maximum Junction Temp,(Tj) 150 ℃ (θJA) UA / SO / SQ 206 / 543 / 543 ℃/W (θJC) UA / SO / SQ 148 / 410 /410 ℃/W 606 / 230 / 230 mW Reverse voltage, (VDD) (VOUT) Magnetic flux density Output current,(IOUT) Operating Temperature Range, (Ta) Thermal Resistance Package Power Dissipation, (PD) UA / SO / SQ Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters TA=+25℃, VDD=5.0V Parameters Test Conditions Min Typ Units 6 V 6.0 mA 400 mV 10 uA Supply Voltage,(VDD) Operating Supply Current,(IDD) Average Output Low Voltage,(VDSON) IOUT=10mA Output Leakage Current,(Ioff) IOFF Output Rise Time,(TR) RL=10kΩ, CL =20pF 0.45 uS Output Fall Time,(TF) RL=10kΩ; CL =20pF 0.45 uS Electro-Static Discharge HBM Operate Point, Release Point 2.5 Max 2.6 B BOP, Vout On (BOPN) N pole to branded side, B > BOP, Vout On -60 -30 (BRPS) S pole to branded side, B < BRP, Vout Off 5 25 (BRPN) N pole to branded side, B < BRP, Vout Off Hysteresis,(BHYS) 30 -25 5 |BOPx - BRPx| 60 Gauss Gauss -5 Gauss Typical Application circuit Vcc C1：10nF C2：100pF R1：10KΩ R1 VDD C1 253 Out Out GND C2 091713 Page 3 of 5 Rev. 1.04 MH253 Specifications High Sensitivity Omni-Polar Hall Effect Switch Sensor Location, Package Dimension and Marking MH253 Package UA Package Hall Chip location 2.00 0.9 253 Hall Sensor Location NOTES: XXX Mark 1).Controlling dimension: mm 2).Leads must be free of flash Output Pin Assignment and plating voids (Top view) 3).Do not bend leads within 1 mm of lead to package 253 interface. XXX 4).PINOUT: Pin 1 VDD Pin 2 GND Pin 3 Output 3 2 1 VDD GND Out SO Package Hall Plate Chip Location (Top View) (Bottom view) 3 3 0.80 253XX 1 2 2 Hall Sensor Location 1 1.45 NOTES: 1. PINOUT (See Top View at left :) Pin 1 VDD Pin 2 Output Pin 3 GND 2. Controlling dimension: mm 3. Lead thickness after solder plating will be 0.254mm maximum 091713 Page 4 of 5 Rev. 1.04 MH253 Specifications High Sensitivity Omni-Polar Hall Effect Switch SQ Package 253 XX Hall Plate Chip Location (Top view) NOTES: 1. 1 3 PINOUT (See Top View at left) 1 2 2. Pin 1 VDD Pin 2 Output Pin 3 GND 1 Hall Sensor Location 1 2 Controlling dimension: mm; 3. Chip rubbing will be 10mil 3 4. maximum; Chip must be in PKG. center. 091713 Page 5 of 5 Rev. 1.04