MXD8625C

MXD8625C SPDT Switch for 3G/4G Application VED APPRO This document contains information that is confidential and proprietary to Maxscend Microelectronics Company Limited (Maxscend) and may not be reproduced in any form without express written consent of Maxscend. No transfer or licensing of technology is implied by this document. Page 1 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8625C – SPDT Switch for 3G/4G Application General Description Applications The MXD8625C is a Single-Pole, Double-Throw  GSM/WCDMA/LTE transmit and receive (SPDT) LTE/WCDMA/GSM transmit and receive switch. Switching is controlled by an integrated Features GPIO interface with a single control pin.  Broadband frequency range: 0.1 to 3 GHz  Low insertion loss: 0.35 dB @ 2.7 GHz  High isolation: 28 dB up to 2.7 GHz  P0.1dB 36dBm  No external DC blocking capacitors required  Single GPIO control line with VDD voltage No external DC blocking capacitors are required as long as no DC voltage is applied on any RF path. The MXD8625C is provided in a compact 1.1mm x regulator: 0.7mm x 0.45mm 6-lead QFN package that meets VCTL= 1.6 to 3.00 V requirements for board-level assembly. VDD= 2.5 to 3.00 V A functional block diagram and the pin  Small, 6-Lead QFN, 400 um pitch (1.1mm x 0.7mmx 0.45 mm) package configuration are shown in Figure 1. Functional Block Diagram and Pin Function 1 RF2 6 V1 2 GND 5 ANT 3 RF1 4 VDD RF1 ANT RF2 Logic and Supply VDD V1 Figure 1.Functional Block Diagram and Pin-out (Top View) Page 2 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8625C -- SPDT Switch for 3G/4G Application Application Circuit 1 RF2 6 V1 2 GND 5 ANT VCTL1 VDD 3 RF1 4 VDD C1 100pF Figure 2. MXD8625C Application Circuit Note: C1 = 100pF Table 1. Pin Description Pin No. Name Description 1 2 3 RF2 GND RF1 RF I/O. Throw 1 of the switch. Ground RF I/O. Throw 2 of the switch. Pin No. 6 5 4 Name V1 ANT VDD Description Digital Antenna Supply Truth Table Table 2. State 0 1 Active Path ANT to RF1 ANT to RF2 V1 (Bump B1) 0 1 Note: “1” = 1.6 V to 3.00 V. “0” = 0 V to +0.3 V. Recommended Operation Range Table 3. Parameters Operation Frequency Power supply Switch Control Voltage High Switch Control Voltage Low Symbol Min Typ Max f1 0.1 2.5 1.6 0 2.8 1.8 0 3.0 3.0 3.0 0.3 VDD VCTL_H VCTL_L Units GHz V V V Page 3 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8625C -- SPDT Switch for 3G/4G Application Specifications Table 4.Electrical Specifications Parameter Symbol Specification Min. Typical Max. Units Test Condition DC Specifications Supply voltage Control voltage: Low High Current on V1 pin Supply current VDD 2.5 2.8 3.0 V VCTL_L VCTL_H 0 +1.6 0 +1.8 +0.3 +3.0 V V 5 μA 25 μA 10 μs 2 μs 20 mVpp 0.25 0.30 0.35 40 35 28 0.35 0.40 0.50 dB dB dB dB dB dB 1.25:1 1.5:1 - ICTL IDD DC supply turnon/turn-off time ton RF path switching time tsw Supply ripple VPP RF Specifications Insertion loss (RF1 or RF2 to ANT pin) 1 IL Isolation (ANT to RF1 or RF2) Voltage Standing Wave Ratio, all ports 0.1dB compression point （from antenna to RF1 and RF2） 13 ISO 35 30 25 VSWR P0.1dB 35 36 dBm VDD= 2.8 V, V1 = VCTL_H Measured from 50% of final VDD supply voltage to 90% of final RF power From one active state to another active state transition, measured from 50% of final control voltage to 90% of final RF power 700 to 960 MHz 1710 to 2170 MHz 2170 to 2690 MHz 700 to 960 MHz 1710 to 2170 MHz 2170 to 2690 MHz Referenced to 50 Ω, 700 to 2690 MHz 700 to 2690 MHz Absolute Maximum Ratings Table 5. Maximum ratings Parameters Symbol Minimum Maximum Supply voltage Digital control voltage RF input power Operating temperature Storage temperature Electrostatic discharge: Human Body Model (HBM), Class 1C Machine Model (MM), Class A VDD VCTL PIN TOP TSTG +2.0 0 +3.3 +3.0 +36.5 +85 +150 V V dBm ℃ ℃ 1000 V 100 V ESD –30 –55 Units Note: Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. Page 4 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8625C -- SPDT Switch for 3G/4G Application Package Outline Dimension aaa A D C B // bbb C E ccc A2 C e PIN 1 ID. ddd C B A Φb 0.050 0.200 A A A PIN1 ID A A 0.050 BOTTOM VIEW B 0.100 0.100 SIDE VIEW C aaa C TOP VIEW A3 A A4 ALL DIMENSIONS ARE IN MILLIMETERS. SYMBOL A A1 A2 A3 b e D E aaa MIN. 0.40 0.00 0.25 0.15 0.65 1.05 MILLIMETER NOR. 0.45 0.30 0.15 REF 0.20 0.4 BSC 0.70 1.10 0.10 bbb 0.10 ccc 0.08 ddd 0.10 MAX. 0.50 0.05 0.35 0.25 0.75 1.15 Figure 3. Package outline dimension Page 5 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential MXD8625C -- SPDT Switch for 3G/4G Application Reflow Chart tP TP Critical Zone TL to TP Ramp-up Temperature TL TSmax tL TSmin Ramp-down tS Preheat t 25 ℃ to Peak Time Figure 4. Recommended Lead-Free Reflow Profile Table 6. Profile Parameter Lead-Free Assembly, Convection, IR/Convection Ramp-up rate（TSmax to Tp） 3℃/second max. Preheat temperature（TSmin to TSmax） 150℃ to 200℃ Preheat time（ts） 60 - 180 seconds Time above TL , 217℃（tL） 60 - 150 seconds Peak temperature（Tp） 260℃ Time within 5℃ of peak temperature(tp) 20 - 40 seconds Ramp-down rate 6℃/second max. Time 25℃ to peak temperature 8 minutes max. ESD Sensitivity Integrated circuits are ESD sensitive and can be damaged by static electric charge. Proper ESD protection techniques should be used when handling these devices. RoHS Compliant This product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) and polybrominated diphenyl ethers (PBDE), and are considered RoHS compliant. 1.2.1 Page 6 of 6 Maxscend Microelectronics Company Limited. All rights reserved. Maxscend Confidential