NV6156-RA

NV6156 GaNFast™ Power IC with GaNSense™ Technology 1. Features GaNFast™ Power IC • • • • • • • • • Monolithically-integrated gate drive Wide VCC range (10 to 30 V) Programmable turn-on dV/dt 200 V/ns dV/dt immunity 800 V Transient Voltage Rating 700 V Continuous Voltage Rating Low 170 mΩ resistance Zero reverse recovery charge 2 MHz operation GaNSense™ Technology • • • • • QFN 5 x 6 mm Integrated loss-less current sensing Short-circuit protection Over-temperature protection Autonomous low-current standby mode Auto-standby mode input Simplified schematic 3. Description This GaNFast™ power IC integrates a high performance eMode GaN FET with integrated gate drive to achieve unprecedented high-frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device. GaNSense™ enables integrated loss-less current sensing which eliminates external current sensing resistors and increases system efficiency. GaNSense™ also enables short circuit and over-temperature protection to increase system robustness, while auto-standby mode increases light, tiny & no-load efficiency. These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and industrystandard low-profile, low-inductance, SMT QFN packaging to enable designers to achieve simple, quick and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities at a very attractive cost structure. Small, low-profile SMT QFN • 5 x 6 mm footprint, 0.85 mm profile • Minimized package inductance • Large cooling pad Sustainability • RoHS, Pb-free, REACH-compliant • Up to 40% energy savings vs Si solutions • System level 4kg CO2 Carbon Footprint reduction Product Reliability • 20-year limited product warranty (see Section 14 for details) 2. Topologies / Applications • AC-DC, DC-DC, DC-AC • QR Flyback, PFC, AHB, Buck, Boost, Half bridge, Full bridge, LLC resonant, Class D • Wireless power, Solar Micro-inverters, LED lighting, TV SMPS, Server, Telecom 4. Typical Application Circuits Loss-less Current Sensing HF QR Flyback Final Datasheet 1 April 13, 2022 NV6156 5. Table of Contents 1. Features ...................................................................1 8.2. UVLO Mode ..................................................... 15 2. Topologies / Applications ......................................1 8.3. Normal Operating Mode ................................... 16 3. Description ..............................................................1 8.4. Low Power Standby Mode ............................... 17 4. Typical Application Circuits ..................................1 8.5. Programmable Turn-on dV/dt Control .............. 17 5. Table of Contents ...................................................2 8.6. GaNSenseTM Technology Loss-Less Current Sensing ................................................................... 18 6. Specifications .........................................................3 6.1. Absolute Maximum Ratings(1) .............................3 8.7. Over Current Protection (OCP) ........................ 19 6.2. Recommended Operating Conditions(3) ..............4 8.8. Over Temperature Protection (OTP)................ 20 8.9. Drain-to-Source Voltage Considerations ......... 21 6.3. ESD Ratings........................................................4 9. PCB Layout Guidelines ....................................... 22 6.4. Thermal Resistance ............................................4 10. Recommended PCB Land Pattern ................... 23 6.5. Electrical Characteristics.....................................5 11. Package Outline (Power QFN) .......................... 24 6.6. Electrical Characteristics (2, cont.) .....................6 12. Tape and Reel Dimensions ............................... 25 6.7. Electrical Characteristics (3, cont.) .....................7 13. Ordering Information ......................................... 26 6.8. Switching Waveforms .........................................8 14. 20-Year Limited Warranty ................................. 26 6.9. Characteristic Graphs .........................................9 15. Revision History………………..…………………26 7. Pin Configurations and Functions ......................12 8. Functional Description .........................................13 8.1. GaN Power IC Connections and Component Values ......................................................................13 Final Datasheet 2 April 13, 2022 NV6156 6. Specifications 6.1. Absolute Maximum Ratings(1) (with respect to Source (pad) unless noted) SYMBOL VDS (CONT) VDS (TRAN) PARAMETER Drain-to-Source Voltage (2) MAX UNITS -7 to +700 V Transient Drain-to-Source Voltage 800 V VCC Supply Voltage 30 V VDD Drive Supply Voltage 7 V RDD Input Voltage 7 V VSTBY Auto-Standby Mode Pin Voltage -0.6 to +20 or VCC V 6 V -0.6 to +20 or VCC V 5.3 V 8 A V5V VPWM VCS 5V Pin Voltage PWM Input Pin Voltage CS Pin Voltage ID Continuous Drain Current (@ TC = 100ºC) ID PULSE Pulsed Drain Current (10 µs @ TJ = 25ºC) 16 A Slew Rate 200 V/ns dV/dt TJ Junction Temperature -55 to 150 ºC TSTOR Storage Temperature -55 to 150 ºC (1) Absolute maximum ratings are stress ratings; devices subjected to stresses beyond these ratings may cause permanent damage. (2) VDS (TRAN) allows for surge ratings during non-repetitive events that are