PIN-4X4D

4X4D 4x4 Silicon Array Detectors The PIN-4X4D is a 4 by 4 array of superblue enhanced Photodetectors. Our proprietary design provides virtually complete isolation between all of the 16 elements. The standard LCC package allows easy integration into your surface mount applications. Numerous applications include Ratio and Scattering measurements, as well as Position Sensing. For custom packages, special electro-optic requirements, or to order these parts in die form, please contact our Applications group. APPLICATIONS FEATURES • Scattering Measurements • Position Sensing • Speedy Response • Extremely Low Cross-talk • Surface Mount Design Typical Spectral Response 0. 60 0. 50 0. 40 0. 30 0. 20 PIN-4X4D 0. 10 UDT-4X4D 0. 00 300 400 500 600 800 900 1000 Responsivity (A/W) λp Capacitance (pF) Package Style ¶ Storage 0V 632nm 1.96 1.4 x 1.4 850 --- 0.35 75 50 0.01 5.2e-14 1 -20 ~ +80 0V 632nm Temp. Range (˚C) Crosstalk Ceramic LCC 1.0 1.0 x 1.0 810 0.35 0.40 35 1.0 0.01 1.0e-14* 0.02% -20 ~ +80 -10 mV NEP (W/√Hz) Operating 0V Shunt Resistance (MΩ) -20 ~ +60 632nm 1100 -20 ~ +60 Dimensions (mm) Area (mm2) Model Number Active Area 700 Peak Responsivity Wavelength 200 Ceramic LCC nm 0V 810nm* typ. min. typ. typ. min typ. typ. typ. 4 x 4 Array Detectors PIN-4X4D UDT-4X4D* • Non-condensing temperature and storage range, Non-condensing environment. • All Electro-Optical specifications are given on a per element basis. • UDT-4X4D: NEP tested at 810nm* World Class Products - Light Sensing Solutions 55 Mechanical Specifications 4x4 Silicon Array Detectors PIN-4X4D Top views are shown without window All units in inches. NC: NOT CONNECTED SD: SUCTION DIDODE UDT-4X4D Top views are shown without window All units in inches. 56 Photodiode Care and Handling Instructions AVOID DIRECT LIGHT Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to high ambient light levels, particularly from tungsten sources or sunlight. During shipment from OSI Optoelectronics, your photodiodes are packaged in opaque, padded containers to avoid ambient light exposure and damage due to shock from dropping or jarring. AVOID SHARP PHYSICAL SHOCK Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the photodiode’s bonding pads when the detector is dropped or otherwise receives a sharp physical blow. CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE Most windows on OSI Optoelectronics photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft (optical grade) pad. OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage temperature guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing environment for optimum performance and lifetime. OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS OSI Optoelectronics photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in ESD protective packaging. When unpacking and using these products, anti-ESD precautions should be observed. DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE. INSTALL WITH CARE Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering temperatures and conditions specified below: Soldering Iron: Soldering 30 W or less Temperature at tip of iron 300°C or lower. Dip Soldering: Bath Temperature: Immersion Time: Soldering Time: Vapor Phase Soldering: DO NOT USE Reflow Soldering: DO NOT USE 260±5°C. within 5 Sec. within 3 Sec. Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those of black plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses the wire bonds and can cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for 24 hours at 85°C. The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact OSI Optoelectronics Applications group at (310)978-0516 before forming a product’s leads. Product warranties could be voided. *Most of our standard catalog products are RoHS Compliant. Please contact us for details World Class Products - Light Sensing Solutions 59 A a B c = = = = Distance from top of chip to top of glass. Photodiode Anode. Distance from top of glass to bottom of case. Photodiode Cathode (Note: cathode is common to case in metal package products unless otherwise noted). W = Window Diameter. F.O.V. = Filed of View (see definition below). 2. Dimensions are in inches (1 inch = 25.4 mm). 3. Pin diameters are 0.018 ± 0.002" unless otherwise specified. 4. Tolerances (unless otherwise noted) General: 0.XX ±0.01" 0.XXX ±0.005" Chip Centering: ±0.010" Dimension ‘A’: ±0.015" 5. Windows All ‘UV’ Enhanced products are provided with QUARTZ glass windows, 0.027 ± 0.002" thick. All ‘XUV’ products are provided with removable windows. All ‘DLS’ PSD products are provided with A/R coated glass windows. All ‘FIL’ photoconductive and photovoltaic products are epoxy filled instead of glass windows. Mechanical Drawings Mechanical Specifications and Die Topography 1. Parameter Definitions: For Further Assistance Please Call One of Our Experienced Sales and Applications Engineers 310-978-0516 - Or visit our website at www.osioptoelectronics.com 61