EMIRS200 602.907

EMIRS200_AT01T_BC010_Series EMIRS200_AT02V_BC010_Series Thermal MEMS based infrared source For direct electrical fast modulation TO39 header with Reflector 4 With Germanium (AR coated), Barium Fluoride, Calcium Fluoride or Sapphire window  Infrared Source Axetris infrared (IR) sources are micro-machined, electrically modulated thermal infrared emitters featuring true blackbody radiation characteristics, low power consumption, high emissivity and a long lifetime. The appropriate design is based on a resistive heating element deposited onto a thin dielectric membrane which is suspended on a micro-machined silicon structure.  Infrared Gas Detection Applications  Measurement principles: non-dispersive infrared spectroscopy (NDIR), photoacoustic infrared spectroscopy (PAS) or attenuated-total-reflectance FTIR spectroscopy (ATR)  Target gases: CO, CO2, VOC, NOX, NH3, SOX, SF6, hydrocarbons, humidity, anesthetic agents, refrigerants, breath alcohols  Medical: Capnography, anesthesia gas monitoring, respiration monitoring, pulmonary diagnostics, blood gas analysis  Industrial Applications: Combustible and toxic gas detection, refrigerant monitoring, flame detection, fruit ripening monitoring, SF6 monitoring, semiconductor fabrication  Automotive: CO2 automotive refrigerant monitoring, alcohol detection & interlock, cabin air quality  Environmental: Heating, ventilating and air conditioning (HVAC), indoor air quality and VOC monitoring, air quality monitoring Product Datasheet  Features  Large modulation depth at high frequencies  Broad band emission  Low power consumption  Long lifetime  True black body radiation (2 to 14 μm)  Very fast electrical modulation (no chopper wheel needed)  Suitable for portable and very small applications  Rugged MEMS design  Absolute Maximum Ratings (TA = 22°C) Parameter Heater membrane temperature1 Window Optical output power (hemispherical spectral) (TM = 500°C) Optical output power between 4 μm and 5 μm (TM = 500°C) Optical output power between 6 μm and 8 μm (TM = 500°C) Optical output power between 8 μm and 10 μm (TM = 500°C) Optical output power between 10 μm and 13 μm (TM = 500°C) Electrical cold resistance (at TM = TA = 22°C) Electrical operating (hot) resistance2 (at TM = 500°C with f = ≥ 5 Hz and ton ≥ 8 ms) Package temperature Symbol Rating Unit TM 500 °C GeAR BaF2 CaF2 Sapph. POO 35 34 32 18 mW Ps4-5 4.9 4.8 4.9 4.7 mW Ps6-8 6.6 6.6 6.7 1.3 mW Ps8-10 4.1 4.0 4.0 0.0 mW Ps10-13 3.1 3.3 2.1 0.0 mW RC22 35 to 55 Ω RH500C 1.883 * RC22 – 12.02 Ω TP 80 °C Storage temperature TS -20 to +85 °C Ambient temperature3 (operation) TA -40 to +125 °C Heater area AH 2.1 x 1.8 mm2 Frequency4 f 5 to 50 Hz Note: Emission power in this table is defined by hemispherical radiation. Stress beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. RH500C — RC22 (TM = 500°C) | (TM = 500°C) How to ensure that the maximum temperature for TM is not exceeded: 1. Determine electrical cold resistance RC of the EMIRS device at TA=22°C 2. Ensure that anytime RH does not exceed the representative limit as shown in this diagram with respect to these conditions: a. f ≥ 5 Hz b. on-time (pulse duration) ≥ 8 ms Electrical operating (hot) resistance (RH500C) Note: Diagram RH500C — RC22 TM = 500 °C TA = 22 °C Cold resistance RC22 (Ω) Electrical operating (hot) resistance RH versus electrical cold resistance RC22 at TA = 22°C Temperatures above 500°C will impact drift and lifetime of the devices. See Diagram RH — RC | (TM = 500°C) 3 The environmental and package temperature might impact the lifetime and characteristic of the devices. 4 Lower cut-off frequency of 5 Hz for designed thermodynamic state. 1 2 Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 2/7  Ratings at Reference Operation (RO1 TA = 22°C) Parameter Symbol Rating Unit Heater membrane temperature TM < 500 °C Duty cycle of rectangular VH pulse D 62 % Frequency of rect. pulse shape2 fref 5 Hz On time constant of integral emissive power POO τon 18 ms Off time constant of integral emissive power POO τoff 8 ms Package temperature at TA = 22°C TP 40 to 85 °C Note: First order on-time model using τon: VH — t input pulse shape) 1 2 POO — t (Optical response of RO1 input) Rel. opt. output power POO (1) Relative heater voltage VH (1) (RO1 First order off-time model using τoff: Time t (ms) Time t (ms) Relative rectangular heater voltage (VH) pulse with a relative pulse width of 124 ms at 5 Hz (time description of reference operation RO1) Optical response time (relative optical output power POO) of a rectangular voltage pulse (RO1 conditions) Reference Operation: combines lower cut-off frequency of 5 Hz and maximum modulation depth (max-min signal) Recommended frequencies from 5 Hz to 50 Hz Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 3/7  Typical Timing Characteristics Frequency (D = 62%) Rel. opt. output power POO (1) POO - - - f (fixed VH) POO — f, (comp VH) VH, PH — f (compensation factor) max Rel. VH, PH (1) PH max-min VH min Frequency f (Hz) Frequency f (Hz) Relative (to RO) max, min, max-min values of optical output power (POO) versus frequency f with fixed and compensated VH Relative (to RO) electrical drive values heater voltage VH and power PH versus frequency f for compensation Note: Diagrams a, b Relative POO, VH, PH to reference operation (RO) f=5 Hz, rect. pulse D=62% max: maximum value of POO response shape min: minimum value of POO response shape max-min: amplitude calculation of POO resp. shape Fixed VH: same voltage for all frequencies. Compensated VH: for every frequency value, the voltage is adjusted to achieve the same maximum of POO response shape as for 5 Hz. Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 4/7  Typical Timing Characteristics Pulse Duration D1 (f = 50 Hz) Rel. opt. output power POO (1) POO - - D (fixed VH) POO — D (compensated VH) VH, PH — OD (compensation factor) max-min min Rel. VH, PH (1) max PH VH Voltage pulse duration D (%) Voltage pulse duration D (%) Relative (to D=62%) max, min, max-min values of optical output power (POO) versus duty cycle D with fixed and compensated VH Relative (to RO) electrical drive values heater voltage VH and power PH versus duty cycle D for compensation Note: Diagrams a, b Relative POO, VH, PH to reference operation (RO) f=50 Hz, rect. voltage pulse max: maximum value of POO response shape min: minimum value of POO response shape max-min: amplitude calculation of POO resp. shape Fixed VH: same voltage for all frequencies. Compensated VH: for every frequency value, the voltage is adjusted to achieve the same maximum of POO response shape as for D=62%. Effective D shorter than 30% and voltage or power compensation at high frequencies (e.g. 20% @ 50 Hz) might impact the lifetime and characteristic of the devices because of additional stress in material layers. 1 Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 5/7  Typical electrical/thermal characteristics (RO, TA = 22°C) Parameter Symbol Rating Unit Peak chip membrane temperature TM 460/500 °C Heater voltage VH 5.23/5.66 V Heater power PH 394/446 mW Heater voltage VH (V) U460 — RC22 U500 - - RC22 TM=500°C TM=460°C TM (K) TM = 500°C Cold resistance RC22 (Ω) VH (1) Mean1 and upper bound of heater voltage VH vs. cold resistance RC22 Relative change of membrane temperature (TM) by changing heater voltage (VH) P460 — RC22 P500 - - RC22 TM — PH TM=500°C TM= 500°C TM (K) Heater power PH (mW) 1 TM — VH TM=460°C Cold resistance RC22 (Ω) PH (1) Mean1 and upper bound of heater power PH vs. cold resistance RC22 Relative change membrane temperature (TM) by changing heater power (PH) Recommended operation mode TM =460°C, which ensures 95% confidence that the maximum temperature T M = 500°C is not exceeded. Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 6/7  Typical Optical Characteristics (RO, TA = 22°C) Hemispherical spectral emissive power PSE (mW/μm) PSE, Sapphire — λ / PSE, BaF2 - - λ TM=500 °C ε=0.85 TM=450 °C TM=400 °C Wavelength λ (μm) Hemispherical spectral emissive power of EMIRS200 chip surface with a typical emissivity (mean from 2 to 14 μm) of ε=0.85 Opt. output power POO (mW) Distance d between EMIRS and detector (mm) Opening angle αO (°) Optical output power (POO) versus distance d of a 1 mm2 detection surface at 500°C TM Optical output power (POO) versus opening angle αO (integral rotation of a cone) at 500°C TM POO — VH POO — PH TM=500 °C Rel. opt. output power POO (1) Rel. opt. output power POO (1) PSE, Sapphire — α0 / PSE, BaF2 - - α0 Opt. output power POO (mW) POO, Sapphire — d / POO, BaF2 - - d TM=500 °C VH (1) PH (1) Relative change of optical output power (POO) by changing heater voltage (VH) Relative change of optical output power (POO) by changing heater power (PH) Product Datasheet DS_IRS_603.448 & 603.456_EMIRS200_AT0XX_BC010_Series_RevA Page 7/7