GHXS010A060S-D3
VDC
IF
Tj,max
600V SiC Power Module
Dual Diode Pack
Features
600 V
10 A
175 °C
Package
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature independent switching behavior
- Positive temperature coefficient on VF
• Low stray inductance
• High junction temperature operation
• All parts tested to greater than 715V
Benefits
Parallel
• Outstanding performance at high frequency operation
• Low loss and low EMI noise
• Very rugged and easy mounting
• Internally isolated package (AlN)
Part #
• Low junction to case thermal resistance
• Easy paralleling due to positive T C of VF
GHXS010A060S-D3
• RoHS compliant
Package
Marking
SOT-227
GHXS010A060S-D3
Applications
• Switched-mode power supply
• Induction heater
• Welding equipment
• Charging station
Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg)
Characteristics
Continuous forward current
Symbol
IF*
Conditions
Values
TC=25 °C, Tj=175 °C
32
TC=152 °C, Tj=175 °C
10
TC=150 °C, Tj=175 °C
11
TC=25 °C, tp=8.3 ms
110
TC=110 °C, tp=8.3 ms
100
TC=25 °C, tp=10 μs
720
TC=25 °C, tp=8.3 ms
50
TC=110 °C, tp=8.3 ms
42
Unit
A
Surge non-repetitive forward current
sine halfwave
IFSM
Non-repetitive peak forward current
IF,max
i 2t value
i 2dt
Repetitive peak reverse voltage
VRRM
Tj=25 °C
600
V
Diode dv/dt ruggedness
dv/dt
Turn-on slew rate, repetitive
200
V/ns
TC=25 °C
Power dissipation
Operating junction temperature
Storage temperature
Ptot*
A
A
A2s
97
W
Tj
-55…175
°C
Tstorage
-55…150
°C
Notes: *Typical RthJC used
Rev. 1.3, 11/20/2020
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p.1
GHXS010A060S-D3
600V SiC Power Module
Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg)
Characteristics
Symbol
Values
Conditions
min.
typ.
max.
Unit
DC blocking voltage
VDC
IR=30µA, Tj=25 °C
600
-
-
V
Breakdown voltage
VBR
IR=396uA, Tj=25 °C
715
-
-
V
IF=10A, Tj=25 °C
-
1.35
1.50
IF=10A, Tj=125 °C
-
1.38
-
IF=10A, Tj=175 °C
-
1.45
1.90
VR=600V, Tj=25 °C
-
1
30
VR=715V, Tj=25 °C
-
7
-
VR=600V, Tj=125 °C
-
7
-
VF
Diode forward voltage
Reverse current
IR
Total capacitive charge
QC
Total capacitance
C
VR=600V, Tj=175 °C
-
26
300
VR=400V, Tj=25 °C
-
36
-
VR=1V, f=1 MHz
-
572
-
VR=200V, f=1 MHz
-
68
-
VR=400V, f=1 MHz
-
57
-
V
mA
nC
pF
Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified
Characteristics
Symbol
RthJC
Thermal resistance, junction-case
Values
Conditions
Per leg
min.
typ.
max.
-
1.54
1.73
Unit
o
Mounting torque
Md
M4-0.7 screws
1.1
-
1.5
C/W
N-m
Terminal connection torque
Mdt
M4-0.7 screws
-
1.1
1.3
N-m
Package weight
Wt
-
32
-
g
2500
-
-
V
IISOL < 1mA,
50/60 Hz, 1 min
VISOL
Isolation voltage
Typical Performance Per Leg
20
1.E-04
-55C
-55C
25C
25C
75C
15
75C
1.E-05
125C
125C
175C
IR (A)
IF (A)
175C
10
5
1.E-06
1.E-07
0
1.E-08
0.0
0.5
1.0
1.5
2.0
2.5
0
VF (V)
Fig. 1 Forward Characteristics (parameterized on Tj)
Rev. 1.3, 11/20/2020
100
200
300
400
500
600
VR (V)
Fig. 2 Reverse Characteristics (parameterized on Tj)
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GHXS010A060S-D3
600V SiC Power Module
1,000
120
-55C
900
25C
800
100
75C
125C
700
80
175C
PTotal (W)
IR (µA)
600
500
400
60
40
300
200
20
100
Tj=175 oC
0
0
100
200
300
400
500
600
700
800
900
25
45
65
85
VR (V)
105
125
145
165
TC (oC)
Fig. 3 Reverse Characteristics (parameterized on Tj)
Fig. 4 Power Derating
140
800
Duty cycle
100%
Tj=25 oC
700
70%
120
50%
600
30%
100
20%
500
10%
IF (A)
C (pF)
80
60
400
300
40
200
20
100
Tj=175 oC
0
0
25
45
65
85
105
125
145
165
1
TC (oC)
Fig. 5 Current Derating
Rev. 1.3, 11/20/2020
10
100
VR (V)
Fig. 6 Capacitance
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GHXS010A060S-D3
600V SiC Power Module
60
14
Tj=25 oC
Tj=25 oC
12
50
10
EC (μJ)
QC (nC)
40
30
8
6
20
4
10
2
0
0
0
100
200
300
400
500
600
0
100
200
300
400
500
600
VR (V)
VR (V)
Fig. 7 Capacitive Charge
Fig. 8 Typical Capacitance Stored Energy
Normalized Zthjc
1E+00
D=0.50
1E-01
D=0.30
D=0.10
D=0.05
D=0.02
D=0.01
1E-02
1E-03
1E-06
Single Pulse
1E-04
1E-02
1E+00
1E+02
Pulse Width (s)
Fig. 9 Transient Thermal Impedance
Rev. 1.3, 11/20/2020
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GHXS010A060S-D3
600V SiC Power Module
Package Dimensions SOT-227
Sym
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
Rev. 1.3, 11/20/2020
Millimeters
Min
Max
31.67
31.90
7.95
8.18
4.14
4.24
4.14
4.24
4.14
4.24
14.94
15.09
30.15
30.25
38.00
38.10
4.75
4.83
11.68
12.19
9.45
9.60
0.76
0.84
12.62
12.88
25.15
25.30
24.79
25.04
3.02
3.15
6.71
6.96
4.17
4.42
2.08
2.13
3.28
3.63
26.75
26.90
3.86
4.24
20.55
26.90
5.45
5.85
3.15
3.66
0.00
0.13
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Inches
Max
Min
1.256
1.247
0.322
0.313
0.167
0.163
0.167
0.163
0.167
0.163
0.594
0.588
1.191
1.187
1.500
1.496
0.190
0.187
0.480
0.460
0.378
0.372
0.033
0.030
0.507
0.497
0.996
0.990
0.986
0.976
0.124
0.119
0.274
0.264
0.174
0.164
0.084
0.082
0.143
0.129
1.059
1.053
0.167
0.152
0.814
0.809
0.230
0.215
0.144
0.124
0.005
0.000
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GHXS010A060S-D3
600V SiC Power Module
Revision History
Date
9/6/2011
6/4/2014
1/3/2020
11/20/2020
Revision
1.0
1.1
1.2
1.3
Notes
Initial release
Add the part number, pin assignment table.
Applied company name change.
Updated parameters.
Notes
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for
such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS
Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com.
REACh Compliance
REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of
their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to
insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to
SemiQ’s terms and conditions of sale in place at the time of order acknowledgement.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in
which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear
facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or
air traffic control.
SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special,
consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products.
To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ.
SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice.
Rev. 1.3, 11/20/2020
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p.6