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GHXS010A060S-D3

GHXS010A060S-D3

  • 厂商:

    SEMIQ

  • 封装:

    SOT-227-4

  • 描述:

    二极管阵列 2 个独立式 600 V 10A 底座安装 SOT-227-4,miniBLOC

  • 数据手册
  • 价格&库存
GHXS010A060S-D3 数据手册
GHXS010A060S-D3 VDC IF Tj,max 600V SiC Power Module Dual Diode Pack Features 600 V 10 A 175 °C Package • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on VF • Low stray inductance • High junction temperature operation • All parts tested to greater than 715V Benefits Parallel • Outstanding performance at high frequency operation • Low loss and low EMI noise • Very rugged and easy mounting • Internally isolated package (AlN) Part # • Low junction to case thermal resistance • Easy paralleling due to positive T C of VF GHXS010A060S-D3 • RoHS compliant Package Marking SOT-227 GHXS010A060S-D3 Applications • Switched-mode power supply • Induction heater • Welding equipment • Charging station Maximum Ratings, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Continuous forward current Symbol IF* Conditions Values TC=25 °C, Tj=175 °C 32 TC=152 °C, Tj=175 °C 10 TC=150 °C, Tj=175 °C 11 TC=25 °C, tp=8.3 ms 110 TC=110 °C, tp=8.3 ms 100 TC=25 °C, tp=10 μs 720 TC=25 °C, tp=8.3 ms 50 TC=110 °C, tp=8.3 ms 42 Unit A Surge non-repetitive forward current sine halfwave IFSM Non-repetitive peak forward current IF,max i 2t value i 2dt Repetitive peak reverse voltage VRRM Tj=25 °C 600 V Diode dv/dt ruggedness dv/dt Turn-on slew rate, repetitive 200 V/ns TC=25 °C Power dissipation Operating junction temperature Storage temperature Ptot* A A A2s 97 W Tj -55…175 °C Tstorage -55…150 °C Notes: *Typical RthJC used Rev. 1.3, 11/20/2020 www.SemiQ.com p.1 GHXS010A060S-D3 600V SiC Power Module Electrical Characteristics, at Tj=25 °C, unless otherwise specified (per leg) Characteristics Symbol Values Conditions min. typ. max. Unit DC blocking voltage VDC IR=30µA, Tj=25 °C 600 - - V Breakdown voltage VBR IR=396uA, Tj=25 °C 715 - - V IF=10A, Tj=25 °C - 1.35 1.50 IF=10A, Tj=125 °C - 1.38 - IF=10A, Tj=175 °C - 1.45 1.90 VR=600V, Tj=25 °C - 1 30 VR=715V, Tj=25 °C - 7 - VR=600V, Tj=125 °C - 7 - VF Diode forward voltage Reverse current IR Total capacitive charge QC Total capacitance C VR=600V, Tj=175 °C - 26 300 VR=400V, Tj=25 °C - 36 - VR=1V, f=1 MHz - 572 - VR=200V, f=1 MHz - 68 - VR=400V, f=1 MHz - 57 - V mA nC pF Thermal and Package Characteristics, at Tj=25 °C, unless otherwise specified Characteristics Symbol RthJC Thermal resistance, junction-case Values Conditions Per leg min. typ. max. - 1.54 1.73 Unit o Mounting torque Md M4-0.7 screws 1.1 - 1.5 C/W N-m Terminal connection torque Mdt M4-0.7 screws - 1.1 1.3 N-m Package weight Wt - 32 - g 2500 - - V IISOL < 1mA, 50/60 Hz, 1 min VISOL Isolation voltage Typical Performance Per Leg 20 1.E-04 -55C -55C 25C 25C 75C 15 75C 1.E-05 125C 125C 175C IR (A) IF (A) 175C 10 5 1.E-06 1.E-07 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 0 VF (V) Fig. 1 Forward Characteristics (parameterized on Tj) Rev. 1.3, 11/20/2020 100 200 300 400 500 600 VR (V) Fig. 2 Reverse Characteristics (parameterized on Tj) www.SemiQ.com p.2 GHXS010A060S-D3 600V SiC Power Module 1,000 120 -55C 900 25C 800 100 75C 125C 700 80 175C PTotal (W) IR (µA) 600 500 400 60 40 300 200 20 100 Tj=175 oC 0 0 100 200 300 400 500 600 700 800 900 25 45 65 85 VR (V) 105 125 145 165 TC (oC) Fig. 3 Reverse Characteristics (parameterized on Tj) Fig. 4 Power Derating 140 800 Duty cycle 100% Tj=25 oC 700 70% 120 50% 600 30% 100 20% 500 10% IF (A) C (pF) 80 60 400 300 40 200 20 100 Tj=175 oC 0 0 25 45 65 85 105 125 145 165 1 TC (oC) Fig. 5 Current Derating Rev. 1.3, 11/20/2020 10 100 VR (V) Fig. 6 Capacitance www.SemiQ.com p.3 GHXS010A060S-D3 600V SiC Power Module 60 14 Tj=25 oC Tj=25 oC 12 50 10 EC (μJ) QC (nC) 40 30 8 6 20 4 10 2 0 0 0 100 200 300 400 500 600 0 100 200 300 400 500 600 VR (V) VR (V) Fig. 7 Capacitive Charge Fig. 8 Typical Capacitance Stored Energy Normalized Zthjc 1E+00 D=0.50 1E-01 D=0.30 D=0.10 D=0.05 D=0.02 D=0.01 1E-02 1E-03 1E-06 Single Pulse 1E-04 1E-02 1E+00 1E+02 Pulse Width (s) Fig. 9 Transient Thermal Impedance Rev. 1.3, 11/20/2020 www.SemiQ.com p.4 GHXS010A060S-D3 600V SiC Power Module Package Dimensions SOT-227 Sym A B C D E F G H I J K L M N O P Q R S T U V W X Y Z Rev. 1.3, 11/20/2020 Millimeters Min Max 31.67 31.90 7.95 8.18 4.14 4.24 4.14 4.24 4.14 4.24 14.94 15.09 30.15 30.25 38.00 38.10 4.75 4.83 11.68 12.19 9.45 9.60 0.76 0.84 12.62 12.88 25.15 25.30 24.79 25.04 3.02 3.15 6.71 6.96 4.17 4.42 2.08 2.13 3.28 3.63 26.75 26.90 3.86 4.24 20.55 26.90 5.45 5.85 3.15 3.66 0.00 0.13 www.SemiQ.com Inches Max Min 1.256 1.247 0.322 0.313 0.167 0.163 0.167 0.163 0.167 0.163 0.594 0.588 1.191 1.187 1.500 1.496 0.190 0.187 0.480 0.460 0.378 0.372 0.033 0.030 0.507 0.497 0.996 0.990 0.986 0.976 0.124 0.119 0.274 0.264 0.174 0.164 0.084 0.082 0.143 0.129 1.059 1.053 0.167 0.152 0.814 0.809 0.230 0.215 0.144 0.124 0.005 0.000 p.5 GHXS010A060S-D3 600V SiC Power Module Revision History Date 9/6/2011 6/4/2014 1/3/2020 11/20/2020 Revision 1.0 1.1 1.2 1.3 Notes Initial release Add the part number, pin assignment table. Applied company name change. Updated parameters. Notes RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented March, 2013. RoHS Declarations for this product can be obtained from the Product Documentation sections of www.SemiQ.com. REACh Compliance REACh substances of high concern (SVHC) information is available for this product. Since the European Chemicals Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact our office at SemiQ Headquarters in Lake Forest, California to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. SemiQ Inc., reserves the right to make changes to the product specifications and data in this document without notice. SemiQ products are sold pursuant to SemiQ’s terms and conditions of sale in place at the time of order acknowledgement. This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control. SemiQ makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SemiQ assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using SemiQ products. To obtain additional technical information or to place an order for this product, please contact us. The information in this datasheet is provided by SemiQ. SemiQ reserves the right to make changes, corrections, modifications, and improvements of datasheet without notice. Rev. 1.3, 11/20/2020 www.SemiQ.com p.6
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