NJG1105F-TE1

NJG1105F-TE1

  • 厂商:

    NISSHINBO(日清纺)

  • 封装:

    SOT-23-6-1

  • 描述:

    射频放大器 IC 手机,W-CDMA,CDMA,GSM,UMTS 1.8GHz,1.9GHz,2.1GHz SOT-23-6-1

  • 数据手册
  • 价格&库存
NJG1105F-TE1 数据手册
NJG1105F 1.8/1.9/2.1GHz BAND LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.8/1.9/2.1GHz digital cellular phone handsets such as DCS1800, PCS and W-CDMA. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. nPACKAGE OUTLINE NJG1105F nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain +2.8V typ. 7mA typ. 19dB typ. @f=1860MHz 18dB typ. @f=1960MHz 15dB typ. @f=2140MHz 1.7dB typ. @f=1860/1960/2140MHz -3dBm typ. @f=1860.0+1860.1MHz -3dBm typ. @f=1960.0+1960.1MHz +1dBm typ. @f=2140.0+2140.1MHz MTP6 (Mount Size: 2.8x2.9x1.2mm) lLow Noise Figure lHigh Input IP3 lPackage nPIN CONFIGURATION (Top View) 4 3 Pin connection 5 2 6 1 1.VDD 2.GND 3.RF OUT 4.RF IN 5.GND 6.EXTCAP Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1105F nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Input Power SYMBOL VDD Pin VDD=2.8V Power Dissipation Operating Temp. Storage Temp. (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNITS 6.5 V +15 dBm CONDITIONS PD Topr Tstg 150 -40~+85 -55~+125 mW °C °C nELECTRICAL CHARACTERISTICS 1 (1.8GHz Band) (VDD=2.8V, f=1860MHz, Ta=+25°C, Zs=Zl=50Ω, with application circuit) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency Freq 1840 1860 1870 MHz Drain Voltage VDD 2.7 2.8 5.5 V Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point LNAIN Port VSWR LNAOUT Port VSWR IDD Gain Gflat NF RF OFF f=1840~1870MHz P-1dB IIP3 f=1860.0+1860.1MHz, Pin=-35dBm VSWRi VSWRo IN/OUT terminal: open or short, No RF input, Ta=20~80°C, freq
NJG1105F-TE1 价格&库存

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