WD2SN02GX816-667G-PF

Page 1 of 2 DRAM DDR2 SODIMM RDIMM UDIMM SODIMM mini DIMM DDR2 has been the standard memory solutions for applications in virtually all market segments from Servers, PCs and Notebooks to Printers, Networking and Storage systems and many more for several years providing superior cost and performance criteria. DDR2 has started to relinquish its role as the memory industry’s mainstream technology to DDR3 and is forecasted to become a legacy product by early 2011 Available in power supply voltages of 1.8V (and 1.55V for FBDIMMs) and with transfer data rates from 400Mb/s to 800Mb/s and beyond, DDR2 has been designed in a wide range of applications providing designers with numerous module options to choose from. Wintec offers a wide range of DDR2 Module solutions. Please click on the link to find out more about our solutions. DDR2 - 200-Pin SODIMM - Registered ECC Standard Profile (1.181”) with Nominal Voltage (1.8V) Density Part Number Rank DIMM Config Component Config Voltage 1GB WD2AE01GX809-xxxx-yyz 1 rank 128x72 128Mx8 1.8V 2GB WD2AE02GX809-xxxx-yyz 1 rank 256x72 256Mx8 1.8V 4GB WD2AE04GD809-xxxx-yyz 2 rank 512x72 512Mx8 1.8V DDR2 - 200-Pin SODIMM - Unbuffered ECC Standard Profile (1.181”) with Nominal Voltage (1.8V) Density Part Number Rank DIMM Config Component Config Voltage 1GB WD2SE01GX809-xxxx-yy 1 rank 128x72 128Mx8 1.8V 5/31/2012 Page 2 of 2 WD2SE02GX818-xxxx-yy 2 rank 256x72 128Mx8 1.8V WD2SE02GX809-xxxx-yy 1 rank 256x72 256Mx8 1.8V WD2SE04GX818-xxxx-yy 2 Rank 512x72 256Mx8 1.8V 2GB 4GB DDR2 - 200-Pin SODIMM - Unbuffered Non-ECC Standard Profile (1.181”) with Nominal Voltage (1.8V) Density Part Number Rank DIMM Config Component Config Voltage 1GB WD2SN01GX808-xxxx-yy 1 rank 128x64 128Mx8 1.8V WD2SN02GX816-xxxx-yy 2 rank 256x64 128Mx8 1.8V WD2SN02GX808-xxxx-yy 1 rank 256x64 256Mx8 1.8V WD2SN04GX816-xxxx-yy 2 rank 512x64 256Mx8 1.8V WD2SN04GX808-xxxx-yy 1 rank 512x64 512Mx8 1.8V 2GB 4GB (xxxxx) Modules Speed (MHz) and CAS Latency 800I: 800MHz CL6 = 800G : 800MHz CL5 667G : 667MHz CL5 533E : 533MHz CL4 (yy) = (z) = DRAM Manufacturer and Die Revision P: Samsung A: A-Die H: Micron B: B-Die C: Hynix C: C-Die Buffer / Register set (Only applies to Registered/Buffered modules) I: Inphi D: IDT L: Intel COPYRIGHT © 2011 WINTEC INDUSTRIES ALL RIGHTS RESERVED 5/31/2012