S8050

S8050 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol VCEO VCBO VEBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C PD Junction Temperature Tj Storage, Temperature Tstg Unit Vdc Vdc Vdc mAdc Value 25 40 5.0 500 0.625 W 150 C C -55 to +150 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 25 - Vdc Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) V(BR)CBO 40 - Vdc Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) V(BR)EBO 5.0 Collector Cutoff Current (VCE= 20 Vdc, I B =0) ICE0 - 0.1 uAdc Collector Cutoff Current (VCB= 40 Vdc, IE=0) ICBO - 0.1 uAdc Emitter Cutoff Current (VEB= 3.0Vdc, I C =0) IEBO - 0.1 uAdc www.slkormicro.com 1 - Vdc S8050 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Symbol Min TYP Max Unit DC Current Gain (IC= 50 Adc, VCE=1.0 Vdc) hFE (1) 85 - 300 - DC Current Gain (IC= 500 mAdc, VCE= 1.0 Vdc) hFE (2) 50 - - - Collector-Emitter Saturation Voltage (IC= 500 Adc, IB= 50 mAdc) VCE(sat) - - 0.6 Vdc Base-Emitter Saturation Voltage (IC= 500 mAdc, IB= 50 mAdc) VBE(sat) - - 1.2 Vdc fT 150 - - MHz Characteristics ON CHARACTERISTICS Current-Gain-Bandwidth Product (IC= 20 mAdc, VCE=6.0 Vdc, f=30MHz) Classification of hFE(1) Rank B C Range 85-160 120-200 www.slkormicro.com 2 D 160-300 S8050 www.slkormicro.com 3 S8050 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G www.slkormicro.com 4 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50