SS8050

SS8050 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 MAXIMUM RATINGS(TA=25˚C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current-Continuous IC 1.5 A Total Device Dissipation TA=25°C PD 1.0 W TJ,Tstg -55 to +150 °C Junction and Storage, Temperature ELECTRICAL CHARACTERISTICS (TA=25˚C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC=100µA, IE=0 V(BR)CBO 40 - - V Collector-Emitter Breakdown Voltage IC=0.1mA, IB=0 V(BR)CEO 25 - - V Emitter Base Breakdown Voltage IE=100µA, IC=0 V(BR)EBO 5 - - V Collector cut-off current VCB=40V, IE=0 ICBO - - 0.1 µA Emitter cut-off current VCE=20V, IE=0 ICEO - - 0.1 µA Emitter cut-off current VEB=5V, IC=0 IEBO - - 0.1 µA www.slkormicro.com 1 SS8050 ON CHARACTERISTICS DC Current Gain VCE=1V, IC=100mA VCE=1V, IC=800 mA hFE(1) hFE(2) 85 40 - 400 - - Collector-Emitter Saturation Voltage IC=800mA, IB=80mA VCE(sat) - - 0.5 V Base-Emitter Saturation Voltage IC=800mA, IB=80mA VBE(sat) - - 1.2 V Base-Emitter ON Voltage VCE=1V, IC=10mA) VBE(ON) - - 1 V 100 - DYNAMIC CHARACTERISTICS Transition frequency VCE=10 V, IC=50 mA, f=30MHz fT - MHz CLASSIFICATION OF hFE(2) Rank B C D E Range 85-160 120-200 160-300 300-400 www.slkormicro.com 2 SS8050 1000 VCE = 1V IB= 3.0mA 0.4 IB= 2.5mA hFE, DC CURRENT GAIN I C , CO LLECTOR CURRENT (mA) 0.5 IB= 2.0mA 0.3 IB= 1.5mA 0.2 IB= 1.0mA 0.1 100 10 IB= 0.5mA 0 0.4 0 0.8 1.2 1.6 1 2.0 0.1 FIG.1 Static Characteristic VCE = 1V 10 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10000 1000 100 1000 I C =10 IB V BE (sat) 100 VCE (sat) 10 0.1 1 10 100 1000 I C , COLLECTOR CURRENT (mA) VBE, BASE- EMITTER VOLTAGE (VoLTS) FIG.3 Base-Emitter On Voltage FIG.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 VCE = 10V Cob,CAPACITANCE(PF) fT , CURRENT GAIN BANDWIDTH PRODUCT (MHz) 10 FIG.2 DC Current Gain VBE(s at), VCE(s at) , SATURATION VOLTAGE (mA) I C , COLLECTOR CURRENT (mA) 100 1 I C , COLLECTOR CURRENT (mA) VCE , C OLLECTOR-EMITTER VOLTAGE (VoLTS) 100 10 1 1 10 100 f=1.0 MHz IE=0 10 1 400 10 100 VCE,COLLECTOR-BASE VOLTAGE(V) IC,COLLECTORN CURRENT FIG.6 Collector Output Capacitance FIG.5 Current Gain Bandwidth Product www.slkormicro.com 100 3 SS8050 TO-92 Outline Dimensions unit:mm E TO-92 H Dim A B C D E G H J K L L C J K D A B G www.slkormicro.com 4 Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50