BSS138PS

UMW R BSS138PS Features D1 D2 VDS (V) = 60V RDS(ON) 2 (VGS = 10V) RDS(ON) 2.2 (VGS = 4.5V) . S1 Application G1 S2 G2 Notebook Load Switch D1 Networking G2 6 5 S2 4 1 2 3 G1 D2 Hand-held Instruments S1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol Vos VG s Limit Drain Current-Pulsed I DM Maximum Power Dissipation PD 60 ±20 0.3 0.19 0.8 0.35 T J ,T STG -55To150 Continuous Drain Current (T, =150℃ ) TA =25 ℃ ID TA =100°C Operating Junction and Storage Temperature Range RθJA Thermal Resistance,Junction-to-Ambient 350 Unit V V A A W ℃ ℃/W 8 www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R BSS138PS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics V Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS V G s=0V l D =250 µA IDSS 1 µA Gate-Body Leakage Current VD s=60V,V G s=0V V G s=±10V,VD s=0V IGSS ±1 µA V G s=±20V,VD s=0V ±10 µA 2 Ω 2.2 Ω 60 On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VGS(th) VDs=VGs,lD=250µA VGs=10V,lD=0.3A RDS(ON) VGs=4.5V,lD=0.2A VGs=10V,lD=0.2A gFS 1 1.6 0.1 S Dynamic Characteristics 27 PF 18 PF Crss 2 PF Turn-on Delay Time tD(on) 10 nS Turn-on Rise Time tr 50 nS Turn-Off Delay Time tD(off) 17 nS Turn-Off Fall Time tf 10 nS Total Gate Charge Qg 1.7 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance VDs=30V,VG s=0V, F=1.0MHz Switching Characteristics VDD=30V,lD=0.2A VGs=10V,RGEN=10Ω 3 nC Drain-Source Diode Characteristics Diode Forward Voltage Diode Forward Current VSD IS VGs=0V,Is=0.2A 1.2 V 0.3 A 8 www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R BSS138PS Typical Electrical Characteristics 1.5 3 8.0 7.0 VGS = 3.5V 6.0 1.2 RDS(on) , NORMALIZED 5.5 5.0 0.9 4.5 0.6 4.0 3.5 0.3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) V GS =10V 3.0 5.0 6.0 1.5 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 8.0 10 1 0.3 0.6 0.9 I D , DRAIN CURRENT (A) 5 1.2 1.5 Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 2.5 V GS = 10V R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 0.51A 1.8 R DS(ON), NORMALIZED 7.0 0.5 Figure 1. On-Region Characteristics. DRAIN-SOURCE ON-RESISTANCE 5.5 0 1 VDS V GS = 10V 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 2 TJ = 125°C 1.5 25°C 1 -55°C 0.5 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 0 150 0.3 I Figure 3. On-Resistance Variation with Temperature. D 0.6 0.9 , DRAIN CURRENT (A) 1.2 1.5 Figure 4. On-Resistance Variation with Drain Current and Temperature. 1.2 V DS = 10V T J = -55°C V th, NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE 1.5 25°C 125°C 1.2 I D , DRAIN CURRENT (A) 4.5 2 0 0 4.0 2.5 0.9 0.6 0.3 2 3 4 5 6 V GS , GATE TO SOURCE VOLTAGE (V) 7 1 0.9 0.8 0.7 -50 0 1 V DS = V GS I D = 250µA 1.1 8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 Figure 6. Gate Threshold Variation with Temperature. Figure 5. Transfer Characteristics. 8 www.umw-ic.com 3 UTD Semiconductor Co.,Limited R UMW BSS138PS 1.16 I D 1.5 1 = 250µA 1.12 1.08 1.04 1 0.96 0.92 0.88 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 TJ = 125°C -55°C 0.01 Figure 7. Breakdown Voltage Variation with Temperature. 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 10 100 VDS = 25V V GS , GATE-SOURCE VOLTAGE (V) 50 C iss CAPACITANCE (pF) 25°C 0.1 0.001 0.2 150 V GS = 0V 0.5 I S , REVERSE DRAIN CURRENT (A) BV DSS , NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE Typical Electrical Characteristics (continued) 20 C oss 10 C rss 5 f = 1 MHz 2 V GS = 0 V 1 0.1 8 I D = 0.51A 6 4 2 0 0.2 0.5 1 2 5 10 20 0 50 V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 9. Capacitance Characteristics. 0.2 0.4 0.6 0.8 Q g , GATE CHARGE (nC) 1 1.2 Figure 10. Gate Charge Characteristics. 0.7 V DS = 10V T I D , DRAIN CURRENT (A) 0.6 0.5 J = -55°C 25°C 0.4 125°C 0.3 0.2 0.1 0 0 0.3 V GS 0.6 0.9 1.2 , GATE TO SOURCE VOLTAGE (V) 1.5 Figure 11. Transconductance Variation with Drain Current and Temperature. 8 www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R BSS138PS Typical Thermal Characteristics 0.55 I D , STEADY-STATE DRAIN CURRENT (A) STEADY-STATE POWER DISSIPATION (W) 1.2 1.1 1a 1 0.9 1b 0.8 1c 4.5"x5" FR-4 Board 0.7 o TA = 2 5 C Still Air 0.6 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1 1a 0.5 1b 0.45 1c 0.4 4.5"x5" FR-4 Board o TA = 2 5 C Still Air VG S = 1 0 V 0.35 0 Figure 12. SOT23-6 Dual Package Maximum Steady-State Power Dissipation versus Copper Mounting Pad Area. 0.025 0.05 0.075 0.1 2 2oz COPPER MOUNTING PAD AREA (in ) 0.125 Figure 13. Maximum Steady-State Drain Current versus Copper Mounting Pad Area. 3 2 I D , DRAIN CURRENT (A) 1 RD S(O N) LIM IT 10 0 1m us s 0.5 10 0.2 10 0.1 V 0.05 GS 0m ms s 1s = 10V DC SINGLE PULSE R θJ A = See Note 1c 0.02 T A = 25°C 0.01 1 2 5 10 20 V DS , DRAIN-SOURCE VOLTAGE (V) 50 70 Figure 14. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0 .5 D = 0.5 0 .2 0.2 0 .1 R JA (t) = r(t) * R JA θ θ R JA = See Note 1c θ 0.1 P(pk) 0.05 t1 0.05 0.02 0.01 0.02 0.01 0 .0 0 0 1 = P * R JA (t) θ Duty Cycle, D = t 1 / t 2 A Single Pulse 0 .001 t2 TJ - T 0 .0 1 0 .1 t 1, TIME (sec) 1 10 100 300 8 www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R BSS138PS SOT23-6 8 www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW R BSS138PS Marking NZt Ordering information Order code Package Baseqty Deliverymode UMW BSS138PS SOT23-6 3000 Tape and reel 8 www.umw-ic.com 7 UTD Semiconductor Co.,Limited