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TLV70430DBVR(MS)

TLV70430DBVR(MS)

  • 厂商:

    MSKSEMI(美森科)

  • 封装:

    SOT23-5

  • 描述:

    最大150mA电流、超低IQ,温度漂移系数小,广泛用于各类电源设备,通信设备,低压降稳压器

  • 数据手册
  • 价格&库存
TLV70430DBVR(MS) 数据手册
TLV70XXXDBVR(MS) Product specification TLV70XXXDBVR(MS) TLV70XXXDBVR(MS) LOW DROPOUT LINEAR REGULATOR GENERAL DESCRIPTION TLV70XXXDBVR(MS) series are a set of Low Dropout LinearRegulator ICs implemented in CMOS technology.They can withstand voltage 30V. And they areavailable with low voltage drop and low quiescentcurrent, widely used in audio, video and communication appliances. FEATURES TYPICAL APPLICATIONS  Low Power Consumption  Battery-powered Equipments  Low Voltage Drop  Communication Equipments  Low Temperature Coefficient  Audio/Video Equipments  Withstanding Voltage 30V  Quiescent Current 1.5μA  Output Voltage Accuracy: tolerance ±2%  High output current: 100mA Reference News PACKAGE OUTLINE PIN CONFIGURATION NC NC 5 4 WDJsemiconductor 1 2 3 GND VIN VOUT SOT-23-5 PIN DESCRIPTION Functions Description No. Name 1 GND 2 VIN input 3 VOUT output ground Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) OUTPUT Series Marking Output TLV70425 |425 2.5V TLV70428 |428 2.8V TLV70430 |QUQ 3.0V TLV70433 |PAO 3.3V TLV70436 |436 3.6V TLV70440 |440 4.0V TLV70444 |444 4.4V TLV70450 |PAX 5.0V Package SOT-23-5 FUNCTIONALBLOCKDIAGRAM Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) ABSOLUTE MAXIMUM RATINGS Description Symbol Value range Unit Limit Power Voltage VIN -0.3~+33 V Storage Temperature Range TSTG -50 ~+125 ℃ TA - 40 ~+85 ℃ Operating Free-air Temperature Range Note : Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute Maximum Ratings” for extended periods may affect device reliability. HEAT DISSIPATION Description Symbol Value range Unit Thermal resistance θJA 500 ℃/W Power dissipation PW 200 mW Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) DC CHARACTERISTICS (unless otherwise noted TA =±25°C) TLV70425DBVR(MS) Parameter Symbol Test Condition Output Voltage VOUT VIN=VOUT+2.0V, IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation ΔVOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation ΔVOUT/ VOUT * ΔVIN Input Voltage VIN — Temperature Coefficient ΔVOUT/ ΔTA *VOUT VOUT+2.0V ,IOUT=10mA , -40℃≤TA≤85℃ Min. Typ. Max. 2.45 2.50 2.55 70 100 Unit V mA VIN=VOUT+2.0V 1mA≤IOUT≤50mA 25 60 mV IOUT=1mA,ΔVOUT=2% 30 100 mV No Load 1.5 3.0 μA — 0.2 %/V — 30 V 100 — ppm/ ℃ Min. Typ. Max. Unit 2.744 2.80 2.856 V VOUT+1.0V≤VIN≤30V, IOUT=1mA — — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. TLV70428DBVR(MS) Parameter Symbol Test Condition Output Voltage V OU T VIN=VOUT+2.0V, IOUT=10mA Output Current IOUT VIN=VOUT+2.0V 70 100 — mA Load Regulation ΔVOUT VIN=VOUT+2.0V 1mA≤IOUT≤50mA — 25 60 mV Voltage Drop VDIF IOUT=1mA,ΔVOUT=2% — 30 100 mV Quiescent Current ISS No Load — 1.5 3.0 μA Line Regulation ΔVOUT/ VOUT * ΔVIN 0.2 %/V Input Voltage VIN — 30 V Temperature Coefficient ΔVOUT/ ΔTA *VOUT VOUT+2.0V ,IOUT=10mA , -40℃≤TA≤85℃ VOUT+1.0V≤VIN≤30V, IOUT=1mA — 100 ppm/ ℃ Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) TLV70430DBVR(MS) Parameter Symbol Test Condition Min. Typ. Max. Unit 2.94 3.00 3.06 V 70 100 — mA VIN=VOUT+2.0V 1mA≤IOUT ≤50mA 25 60 mV IOUT=1mA,△VOUT=2% 30 100 mV No Load 1.5 3.0 μA — 0.2 %/V — 30 V 100 — ppm/℃ Min. Typ. Max. Unit 3.234 3.30 3.366 V 70 100 — mA 25 60 mV 25 55 mV No Load 1.5 3.0 μA VOUT+1.0V≤VIN ≤30V, IOUT=1mA — 0.2 %/V — 30 V 100 — ppm/℃ Output Voltage VOUT VIN=VOUT+2.0V, IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation △VOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation △VOUT/ VOUT * △VIN Input Voltage VIN Temperature Coefficient △VOUT/ △TA *VOUT VOUT+1.0V≤VIN ≤30V, IOUT=1mA — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. TLV70433DBVR(MS) Parameter Symbol Test Condition Output Voltage VOUT VIN=VOUT+2.0V, IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation ᇞVOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation △VOUT/ VOUT * △VIN Input Voltage VIN Temperature Coefficient △VOUT/ △TA *VOUT VIN=VOUT+2.0V 1mA≤IOUT ≤50mA IOUT=1mA,△VOUT=2% — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) TLV70436DBVR(MS) Parameter Symbol Test Condition Min. Typ. Max. Unit 3.528 3.60 3.672 V 70 100 — mA VIN=VOUT+2.0V 1mA≤IOUT ≤50mA 25 60 mV IOUT=1mA,△VOUT=2% 25 55 mV No Load 1.5 3.0 μA — 0.2 %/V — 30 V 100 — ppm/℃ Min. Typ. Max. Unit 3.92 4.0 4.08 V Output Voltage VOUT VIN=VOUT+2.0V , IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation △VOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation △VOUT/ VOUT * △VIN Input Voltage VIN Temperature Coefficient △VOUT/ △TA *VOUT VOUT+1.0V≤VIN ≤30V, IOUT=1mA — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. TLV70440DBVR(MS) Parameter Symbol Test Condition Output Voltage VOUT VIN=VOUT+2.0V, IOUT=10mA Output Current IOUT VIN=VOUT+2.0V 70 100 — mA Load Regulation △VOUT VIN=VOUT+2.0V 1mA≤IOUT ≤50mA — 25 60 mV Voltage Drop VDIF IOUT=1mA,△VOUT=2% 25 55 mV Quiescent Current ISS No 1.5 3.0 μA Line Regulation △VOUT/ VOUT * △VIN — 0.2 %/V Input Voltage VIN — 30 V Temperature Coefficient △VOUT/ △TA *VOUT 100 — ppm/℃ Load VOUT+1.0V≤VIN ≤30V, IOUT=1mA — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) TLV70444DBVR(MS) Parameter Symbol Test Condition Min. Typ. Max. Unit 4.312 4.4 4.488 V 70 100 — mA VIN=VOUT+2.0V 1mA≤IOUT ≤50mA 25 60 mV IOUT=1mA,△VOUT=2% 25 55 mV No Load 1.5 3.0 μA — 0.2 %/V — 30 V 100 — ppm/℃ Min. Typ. Max. Unit 4.9 5.0 5.1 V 100 150 — mA VIN=VOUT+2.0V 1mA≤IOUT ≤70mA 25 60 mV IOUT=1mA,△VOUT=2% 25 55 mV No Load 1.5 3.0 μA — 0.2 %/V — 30 V 100 — ppm/℃ Output Voltage VOUT VIN=VOUT+2.0V , IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation △VOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation △VOUT/ VOUT * △VIN Input Voltage VIN Temperature Coefficient △VOUT/ △TA *VOUT VOUT+1.0V≤VIN ≤30V, IOUT=1mA — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. TLV70450DBVR(MS) Parameter Symbol Test Condition Output Voltage VOUT VIN=VOUT+2.0V IOUT=10mA Output Current IOUT VIN=VOUT+2.0V Load Regulation △VOUT Voltage Drop VDIF Quiescent Current ISS Line Regulation △VOUT/ VOUT * △VIN Input Voltage VIN Temperature Coefficient △VOUT/ △TA *VOUT , VOUT+1.0 V≤VIN ≤30V, IOUT=1mA — — VIN= VOUT+2.0V, IOUT=10mA, -40℃≤TA ≤85℃ — Note : When VIN=VOUT+2.0V, as the output voltage declined 2%, the VDIF=VIN-VOUT. Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) FUNCTIONAL DESCRIPTION TYPICAL APPLICATION CIRCUIT Basic Circuit Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 2.650 2.950 0.104 0.116 E1 1.500 1.700 0.950(BSC) 0.059 e 0.067 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Suggested Pad Layout REEL SPECIFICATION P/N PKG QTY TLV70XXXDBVR(MS) SOT-23-5 3000 Copyright© Msksemi Incorporated www.msksemi.com TLV70XXXDBVR(MS) Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your MSKSEMI Semiconductor representative nearest you before using any MSKSEMI Semiconductor products described or contained herein in such applications. ■ MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein. ■ Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment. ■ MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design. ■ In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of MSKSEMI Semiconductor. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. Whendesigning equipment, referto the "Delivery Specification" for the MSKSEMI Semiconductor productthat you intend to use. Copyright© Msksemi Incorporated www.msksemi.com
TLV70430DBVR(MS) 价格&库存

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TLV70430DBVR(MS)
  •  国内价格
  • 5+0.64444
  • 50+0.56279
  • 150+0.52780
  • 500+0.48406
  • 3000+0.46462
  • 6000+0.45296

库存:2770