SK6513SS5E-50

SK6513S High Voltage, Low Power LDO DESCRIPTION FEATURES ⚫ ⚫ ⚫ The SK6513S is a high voltage, low power consumption and high performance LDO. The family uses an advanced CMOS process and a PMOSFET pass device to achieve fast start-up, with high output voltage accuracy. The SK6513S is stable with a 1.0 μF ~ 10 μF ceramic output capacitor, and uses a precision voltage reference and feedback loop to achieve a worst-case accuracy of 2% over all load, line, process, and temperature variations. ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ Wide Input Voltage Range: up to 45 V Output Current: 350 mA Standard Fixed Output Voltage Options: 1.8 V, 2.5 V, 3.0 V, 3.3 V, 3.6 V and 5.0 V Other Output Voltage Options Available on Request Low IQ: 2.6 µA Low Dropout Voltage Short current protection: 150 mA Excellent Load / Line Transient Response Line Regulation: 0.01 %/V typical Package: DFN1×1-4, SOT23-3, SOT23-5, SOT89-3 ORDER INFORMATION Ordering Number Package Tape and Reel SK6513SD4-XX DFN1×1-4 10000/Reel SK6513SS3-XX SOT23-3 3000/Reel SK6513SS5E-XX SOT23-5 3000/Reel SK6513ST3A-XX SOT89-3 1000/Reel SOT89-3 1000/Reel SK6513ST3B-XX(L-Type) *XX: When expressed as 18, the output voltage is 1.8 V; when expressed as 30 the output voltage is 3.0 V. 上海洺太电子科技有限公司 -1- SUNTEK MICRO LTD PIN CONFIGURATION (Top View) IN IN EN IN EN 4 3 4 3 3 or 1 2 1 2 OUT GND OUT GND DFN1.0 × 1.0-4 IN 1 GND 2 EN 3 1 2 1 2 3 GND OUT GND IN OUT SOT89-3 (L-Type) SOT23-3 5 OUT 4 NC 1 2 3 OUT GND IN SOT89-3 SOT23-5 (SK6513SS5E-XX) PIN DESCRIPTIONS Pin DFN1×1-4 SOT23-3 SOT23-5 SOT89-3 SOT89-3 Symbol Description (SK6513SD4-XX) (SK6513SS3-XX) (SK6513SS5E-XX) (SK6513ST3A-XX) (SK6513ST3B-XX) 1 2 5 1 3 OUT Output pin. 2 1 2 2 1 GND Ground. 3 4 3 3 1 EN 3 4 上海洺太电子科技有限公司 -2- 2 Enable control input, active high. IN Supply input pin. NC No connection. SUNTEK MICRO LTD BLOCK DIAGRAM IN OUT Short-Current Protection Voltage Reference GND FUNCTIONAL DESCRIPTION Input Capacitor A 1 μF ~ 10 μF ceramic capacitor is recommended to connect between IN and GND pins to decouple input power supply glitch and noise. The amount of the capacitance may be increased without limit. This input capacitor must be located as close as possible to the device to assure input stability and less noise. For PCB layout, a wide copper trace is required for both IN and GND. Output Capacitor An output capacitor is required for the stability of the LDO. The recommended output capacitance is from 1 μF to 10 μF, Equivalent Series Resistance (ESR) is from 5 mΩ to 100 mΩ, and temperature characteristics are X7R or X5R. Higher capacitance values help to improve load / line transient response. The output capacitance may be increased to keep low undershoot / overshoot. Place output capacitor as close as possible to OUT and GND pins. Low Quiescent Current The SK6513S, consuming only around 2.6 μA for all input range and output loading, provides great power saving in portable and low power applications. Short Current Limit Protection When output current at the OUT pin is higher than current limit threshold or the OUT pin is short-circuit to GND, the short current limit protection will be triggered and clamp the output current to approximately 100 mA to prevent over-current and to protect the regulator from damage due to overheating. 上海洺太电子科技有限公司 -3- SUNTEK MICRO LTD ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit IN pin to GND pin -0.3 to 48 V OUT pin to GND pin -0.3 to 6 V Thermal Resistance (Junction to Ambient) DFN1 ×1-4 250 SOT23-3 360 SOT23-5 250 SOT89-3 135 ℃/W Operating Junction Temperature -40 to 125 ℃ Storage Temperature -65 to 150 ℃ 300 ℃ ±2000 V Lead Temperature (Soldering, 10 sec) ESD (HBM mode) ESDA/JEDEC JS-001-2017 NOTE: Stresses beyond those listed under “ABSOLUTE MAXIMUM RATINGS” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. CAUTION This integrated circuit can be damaged by ESD if you don’t pay attention to ESD protection. SUNTEK recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SUNTEK reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact SUNTEK sales office to get the latest datasheet. 上海洺太电子科技有限公司 -4- SUNTEK MICRO LTD ELECTRICAL CHARACTERISTICS VIN = VOUT + 2 V; IOUT = 10mA, CIN = COUT = 1.0 μF, unless otherwise noted. Typical values are at TA = +25°C. Parameter Operating Input Voltage Symbol RegLINE Dropout Voltage VDROP Load Regulation RegLOAD Quiescent Current 45 IOUT IQ 2.5 V ≤ VIN ≤ 36 V, IOUT = 10 mA 0.01 0.04 VOUT = 3.0 V, IOUT = 100 mA 330 VOUT = 3.0 V, IOUT = 200 mA 690 1 mA ≤ IOUT ≤ 300 mA, VIN = VOUT + 1 V 350 mV mA 4 μA 0.1 1 μA EN Pin Threshold Voltage VENH EN Input Voltage “H” EN Pin Threshold Voltage VENL EN Input Voltage “L” PSRR %/V 2.6 VEN = 0 V, TA = 25°C Power Supply Rejection Ratio V IOUT = 0 mA IQ_OFF IEN Unit mV 40 VIN = VOUT + 2 V Standby Current EN Pin Current Min Typ Max VIN Line Regulation Maximum Output Current Test Conditions VEN = 0 V to 36 V VIN = VOUT + 1 V, IOUT = 20 mA, f = 1 kHz 1.2 V 0.4 V 1 μA 60 dB 100 μVRMS 155 ℃ 20 ℃ VIN = VOUT + 2 V, IOUT = 1 mA, f = Output Noise Voltage eN 10 Hz to 100 kHz, VOUT = 3 V, COUT = 1 μF Thermal Shutdown Temperature Thermal Shutdown Hysteresis 上海洺太电子科技有限公司 TSD TSDH Temperature Increasing from TA = +25°C Temperature Falling from TSD -5- SUNTEK MICRO LTD TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Line-Transient Response Figure 2. Load-Transient Response Figure 3. Start up Response 上海洺太电子科技有限公司 -6- SUNTEK MICRO LTD TYPICAL PERFORMANCE CHARACTERISTICS (continued) VDROP vs. IOUT Dropout Voltage(mV) 1000 100 10 1 0 50 100 150 200 250 Output Current (mA) 300 350 Figure 4. Dropout Voltage vs. Output Current IQ vs. Temperature 3.5 IQ (μA) 3.2 2.9 2.6 2.3 2 -40 -20 0 20 40 60 80 100 120 Temperature (℃) Figure 5. IQ vs. Temperature APPLICATION CIRCUITS VIN VOUT IN OUT COUT CIN 1μF 1μF Enable GND EN ON OFF 上海洺太电子科技有限公司 -7- SUNTEK MICRO LTD PACKAGE OUTLINE DFN1×1-4 D A E e A2 L Detail A A1 b Detail A: Note: Detail A has two kinds of shapes Symbol Dimensions In Millimeters Min Max A A1 0.500 0.000 A2 0.050 0.125REF b 0.150 0.250 D 0.950 1.050 D1 0.380 0.580 E 0.950 1.050 E1 0.380 0.580 e L 上海洺太电子科技有限公司 0.650BSC 0.150 -8- 0.350 SUNTEK MICRO LTD PACKAGE OUTLINE SOT23-3 D θ E E1 L b e A1 A c Symbol Dimensions In Millimeters Min Max A 1.050 1.250 A1 0.000 0.100 b 0.300 0.500 c 0.100 0.200 D 2.820 3.020 E 2.650 2.950 E1 1.500 1.700 e 0.950BSC L 0.300 0.600 θ 0° 8° 上海洺太电子科技有限公司 -9- SUNTEK MICRO LTD PACKAGE OUTLINE SOT23-5 D θ E E1 L b e A1 A c Symbol Dimensions In Millimeters Min Max A 1.050 1.250 A1 0.000 0.100 b 0.300 0.500 c 0.100 0.200 D 2.820 3.020 E 2.650 2.950 E1 1.500 1.700 e 0.950BSC L 0.300 0.600 θ 0° 8° 上海洺太电子科技有限公司 - 10 - SUNTEK MICRO LTD PACKAGE OUTLINE SOT89-3 D A L E E1 D1 e c b e1 Symbol Dimensions In Millimeters Min Max A 1.400 1.600 b 0.320 0.520 c 0.350 0.440 D 4.400 4.600 D1 1.550REF E 3.940 4.250 E1 2.300 2.600 e 1.500BSC e1 3.000BSC L 上海洺太电子科技有限公司 0.900 - 11 - 1.200 SUNTEK MICRO LTD