AO4421-VB

AO4421 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.050 RDS(on) (Ω) at VGS = -4.5 V 0.060 ID (A) per leg • 100 % Rg and UIS tested -8 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 PARAMETER Continuous Drain Current TC = 25 °C TC = 125 °C ID -4.75 -4.5 Pulsed Drain Current a IDM -32 Single Pulse Avalanche Current IAS -22.4 EAS 25 Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C PD TJ, Tstg Operating Junction and Storage Temperature Range V -8 IS Continuous Source Current (Diode Conduction) UNIT 5 1.67 -55 to +175 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b SYMBOL LIMIT RthJA 110 RthJF 30 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 服务热线：400-655-8788 1 AO4421 www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.0 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 -1 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs -2.5 VGS = 0 V VDS = -60 V - - VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150 VGS = -10 V VDS ≤ -5 V -30 - - VGS = -10 V ID = -4.3 A - 0.050 - VGS = -10 V ID = -4.3 A, TJ = 125 °C - 0.070 - VGS = -10 V ID = -4.3 A, TJ = 175 °C - 0.080 - VGS = -4.5 V ID = -3.8 A - 0.060 - - 13 - - 1530 1910 VDS = -15 V, ID = -4.3 A V nA μA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Fall Time c Source-Drain Diode Ratings and VGS = -10 V VDS = -30 V, f = 1 MHz VDS = -30 V, ID = -5 A f = 1 MHz td(on) tr Time c VGS = 0 V td(off) VDD = -30 V, RL = 8.8 Ω ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω tf - 334 417 - 114 142 - 43.4 65 - 4.7 - - 9 - 1.3 2.5 4 - 11 17 pF nC Ω - 11 17 - 35 52 - 6 9 - - -32 A - -0.8 -1.2 V ns Characteristicsb Pulsed Current a ISM Forward Voltage VSD IF = -2.8 A, VGS = 0 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 AO4421 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 30 30 VGS = 10 V thru 5 V 24 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 24 18 12 VGS = 3 V 6 18 TC = 25 °C 12 6 TC = 125 °C TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 4 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 25 8 20 gfs - Transconductance (S) ID - Drain Current (A) TC = 25 °C 6 TC = 25 °C 4 2 8 VDS - Drain-to-Source Voltage (V) TC = 125 °C 10 TC = - 55 °C 15 TC = 125 °C 10 5 TC = - 55 °C 0 0 1 2 3 4 0 5 2 4 6 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.18 3000 0.13 2400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.10 VGS = 4.5 V 0.07 0.04 1800 48 60 1200 Coss Crss 0.01 10 Ciss 600 VGS = 10 V 8 0 0 6 12 18 24 30 0 12 24 36 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 服务热线：400-655-8788 3 AO4421 www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5 A VDS = 30 V 8 6 4 2 0 0 9 18 27 36 ID = 3.5 A 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 45 0 Qg - Total Gate Charge (nC) 50 75 100 125 150 175 On-Resistance vs. Junction Temperature 100 0.5 10 0.4 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 25 TJ - Junction Temperature (°C) Gate Charge TJ = 150 °C 1 TJ = 25 °C 0.1 VGS = 10 V 1.7 0.3 0.2 0.01 0.1 0.001 0.0 TJ = 150 °C TJ = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 - 60 VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 VGS(th) Variance (V) 2 VSD - Source-to-Drain Voltage (V) ID = 250 μA 0.5 0.3 ID = 5 mA 0.1 - 0.1 - 0.3 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage 服务热线：400-655-8788 125 150 175 - 65 - 70 - 75 - 80 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 4 AO4421 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs Limited by RDS(on)* 1 ms 1 10 ms 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 1s 10 s, DC 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 105 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 AO4421 www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extrac ted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 6 AO4421 www.VBsemi.com SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS DIM Min INCHES Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 服务热线：400-655-8788 7 AO4421 www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 AO4421 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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