FDN302P-VB

FDN302P-VB www.VBsemi.com FDN302P-VB Datasheet P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY - 20 VDS (V) FEATURES RDS(on) () at VGS = - 4.5 V 0.034 • Halogen-free Option Available RDS(on) () at VGS = - 2.5 V 0.046 • Trench Power MOSFET RDS(on) () at VGS = - 1.8 V 0.067 ID (A) -5 Configuration APPLICATIONS • Load Switch for Portable Devices Single TO-236 (SOT-23) S G G 1 3 S D 2 D P-Channel MOSFET Top View  ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V -5 -3 IS - 2.5 IDM - 20 IAS - 11 EAS 6 PD TC = 125 °C UNIT 2 0.67 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 175 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountb Junction-to-Foot (Drain) 服务热线：400-655-8788 1 °C/W FDN302P-VB www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = - 250 μA - 20 - - VGS(th) VDS = VGS, ID = - 250 μA - 0.45 - -1 VDS = 0 V, VGS = ± 8 V - - ± 100 VGS = 0 V VDS = - 12 V - - -1 - - - 50 IGSS Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 12 V, TJ = 125 °C VGS = 0 V VDS = - 12 V, TJ = 175 °C - - - 150 On-State Drain Currenta ID(on) VGS = - 4.5 V VDS- 5 V - 10 - - Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VGS = - 4.5 V ID = - 3.5 A - 0.034 VGS = - 4.5 V ID = - 3.5 A, TJ = 125 °C - 0.066 - VGS = - 4.5 V ID = - 3.5 A, TJ = 175 °C - 0.075 - VGS = - 2.5 V ID = - 3 A - 0.046 VGS = - 1.8 V ID = - 2 A - 0.067 - - 7 - - 695 870 - 265 335 - 190 240 13 VDS = - 5 V, ID = - 1.6 A V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VGS = - 4.5 V VDS = - 6 V, f = 1 MHz VDS = - 6 V, ID = - 3.85 A f = 1 MHz Rg td(on) tr td(off) VDD = - 6 V, RL = 1.6  ID  - 3.85 A, VGEN = - 4.5 V, Rg = 1  tf - 8.4 - 1 - - 2.4 - 4.1 8.2 12.3 - 17 26 - 19 29 - 28 42 - 13 20 pF nC  ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 2 A, VGS = 0 V - - - 20 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 FDN302P-VB www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 15 VGS = 5 V thru 2 V TC = 25 °C 12 ID - Drain Current (A) ID - Drain Current (A) 10 8 6 VGS = 1.5 V 4 9 TC = - 55 °C TC = 125 °C 6 3 2 VGS = 1 V 0 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 5 0 0.6 Output Characteristics 1000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V Ciss 800 600 Coss 400 Crss 0.03 VGS = 4.5 V 200 0 0 2 4 6 8 ID - Drain Current (A) 10 12 0 2 4 6 8 12 10 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 6 1.6 RDS(on) - On-Resistance (Normalized) VDS = 6 V ID = 3.85 A VGS - Gate-to-Source Voltage (V) 3.0 1200 0.12 5 4 3 2 1 0 2.4 Transfer Characteristics 0.15 0.00 1.8 1.2 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 1.4 1.2 VGS = 4.5 V VGS = 2.5 V 1.0 0.8 0.6 - 50 12 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge 服务热线：400-655-8788 ID = 3.5 A On-Resistance vs. Junction Temperature 3 175 FDN302P-VB www.VBsemi.com 100 0.25 10 0.20 1 RDS(on) - On-Resistance (Ω) IS - Source Current (A) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) TJ = 150 °C TJ = 25 °C 0.1 0.10 TJ = 150 °C 0.05 0.01 0.001 0.0 0.15 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.00 1.2 TJ = 25 °C 0 0.3 - 23.5 VDS - Drain-to-Source Voltage (V) VGS(th) Variance (V) - 23.0 ID = 250 μA ID = 5 mA 0.0 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 3 4 5 On-Resistance vs. Gate-to-Source Voltage 0.4 0.1 2 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.2 1 150 ID = 1 mA - 24.0 - 24.5 - 25.0 - 25.5 - 26.0 - 50 175 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature IDM Limited ID - Drain Current (A) 10 Limited by RDS(on)* 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s, DC 0.1 TC = 25 °C Single Pulse 0.01 0.01 BVDSS Limited 0.1 1 20 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 FDN302P-VB www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJF = 175 °C/W 3. TJM - TF = PDMZthJF (t) 4. Surface Mounted Single Pulse 0.01 10 -4 10-3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10 -4 Single Pulse 10-3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C ) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 5 FDN302P-VB www.VBsemi.com SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS INCHES Min Max Min Max A 0.89 1.12 0.035 0.044 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 服务热线：400-655-8788 1 FDN302P-VB www.VBsemi.com 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE 服务热线：400-655-8788 1 FDN302P-VB www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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