NCE80H11D-VB

NCE80H11D www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS 80 RDS(on) VGS = 10 V 6 RDS(on) VGS = 4.5 V 10 120 ID V mΩ mΩ A Single Configuration • ThunderFET® power MOSFET • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see D TO-263 G S S D Top View G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) SYMBOL LIMIT Drain-Source Voltage PARAMETER VDS 80 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current (t = 100 μs) Avalanche Current Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TC = 125 °C ID V 120 65 IDM 225 IAS 50 EAS 125 PD UNIT 370 A mJ b 120 b W TJ, Tstg -55 to +175 °C UNIT THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Junction-to-Ambient (PCB Mount) c RthJA 40 Junction-to-Case (Drain) RthJC 0.75 °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). 服务热线：400-655-8788 1 NCE80H11D www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 80 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = 80 V, V - - 1 UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Dynamic IDSS GS = 0 V V nA μA VDS = 80 V, V GS = 0 V, TJ = 125 °C - - 100 VDS = 80 V, V GS = 0 V, TJ = 175 °C - - 2 mA VDS  10 V, VGS = 10 V 90 - - A VGS = 10 V, ID = 30 A - 6 - VGS = 4.5V, ID = 30 A - 10 - mΩ VDS = 15 V, ID = 30 A - 85 - - 3330 - ID(on) RDS(on) gfs S b Input Capacitance Ciss Output Capacitance Coss - 1395 - Reverse Transfer Capacitance Crss - 95 - Total Gate Charge c Qg - 53.5 81 Gate-Source Charge c Gate-Drain Charge c VDS = 40 V, VGS = 10 V, ID = 30 A - 14.5 - - 13.2 - f = 1 MHz 0.9 1.9 3.8 - 13 26 VDD = 40 V, RL = 1.67  ID  30 A, VGEN = 10 V, Rg = 1  - 22 44 - 27 54 - 9 18 Qgd Gate Resistance Turn-On Delay Time Qgs VGS = 0 V, VDS = 40 V, f = 1 MHz Rg c Rise Time c Turn-Off Delay Time c Fall Time c td(on) tr td(off) tf pF nC  ns Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C) Pulsed Current (t = 100 μs) ISM Forward Voltage a VSD Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 30 A, di/dt = 100 A/μs - - 240 A - 0.86 1.4 V - 88 176 ns - 5 10 A - 0.22 0.44 μC Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NCE80H11D www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 250 200 10000 VGS = 10 V thru 8 V 100 100 VGS = 5 V 50 0 1 2 3 4 80 TC = 25 °C 100 40 TC = 125 °C VGS = 4 V 0 1000 120 1st line 2nd line 1000 VGS = 7 V 150 2nd line ID - Drain Current (A) 160 1st line 2nd line 2nd line ID - Drain Current (A) 200 10000 5 0 10 0 2 TC =-55 °C 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 10 Axis Title 100 10000 0.009 10000 1000 60 TC = 125 °C 40 100 20 0 0 5.0 10.0 20.0 15.0 25.0 0.008 1000 0.007 0 90 ID - Drain Current (A) 2nd line Axis Title 100 Crss 20 40 60 80 100 10 10000 ID = 30 A 8 1000 6 1st line 2nd line Coss 2nd line VGS - Gate-to-Source Voltage (V) 1st line 2nd line 2nd line C - Capacitance (pF) 1000 Ciss 0 130 Axis Title 4800 0 120 10 10000 1200 110 On-Resistance vs. Drain Current 6000 2400 100 ID - Drain Current (A) 2nd line Transconductance 3600 100 VGS = 10 V 0.006 0.005 10 30.0 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 80 1st line 2nd line 2nd line gfs - Transconductance (S) TC =-55 °C 4 VDS = 20 V, 40 V, and 64V 100 2 0 0 11 22 33 44 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge 55 10 服务热线：400-655-8788 3 NCE80H11D www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 1.0 10000 0.4 1000 1.4 VGS = 7.5 V 1.1 100 0.8 -50 -25 0 25 50 75 100 125 150 175 -1.4 -50 -25 0 25 75 100 125 150 175 On-Resistance vs. Junction Temperature Threshold Voltage 1000 1st line 2nd line 0.03 0.02 100 TJ = 125 °C 0.01 6 8 10 2nd line VDS - Drain-to-Source Voltage (V) 0.04 4 10 Axis Title 125 10000 TJ = 25 °C 120 1000 115 100 110 105 10 10000 ID = 250 μA -50 -25 0 25 50 75 100 125 150 175 10 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 150 10000 TJ = 25 °C 0.1 100 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1000 90 1st line 2nd line 1000 1 0.001 10000 120 TJ = 150 °C 2nd line ID - Drain Current (A) 10 1st line 2nd line 2nd line IS - Source Current (A) 50 TJ - Temperature (°C) 2nd line 2 100 ID = 250 μA TJ - Junction Temperature (°C) 2nd line Axis Title 0 ID = 5 mA -0.8 -2.0 10 1000 -0.2 1st line 2nd line 0.5 2nd line VGS(th) - Variance (V) VGS = 10 V 1st line 2nd line 1.7 0.05 2nd line RDS(on) - On-Resistance (Ω) 10000 ID = 30 A 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 60 100 30 0 0 25 50 75 100 125 VSD - Source-to-Drain Voltage (V) 2nd line TC - Case Temperature (°C) 2nd line Source Drain Diode Forward Voltage Current De-Rating 150 175 10 服务热线：400-655-8788 4 NCE80H11D www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 1000 Axis Title 10000 100 10000 100 μs Limited by RDS(on) (1) 10 1000 1 ms 1000 10 ms 25 °C 1st line 2nd line ID limited 2nd line IDAV (A) 100 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 150 °C 100 0.1 100 100 ms, 1 s, 10 s, DC 1 TC = 25 °C Single pulse 0.1 (1) 1 BVDSS limited 10 100 10 1000 10 0.00001 0.0001 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified 10 0.01 0.001 Time (s) 2nd line Safe Operating Area IDAV vs. Time Axis Title 10000 Duty Cycle = 0.5 0.2 0.1 Notes: 1000 PDM 0.1 0.05 t1 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 40 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 0.01 0.001 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 4. Surface mounted 0.01 0.1 1 10 100 100 (t) 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 NCE80H11D www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.05 0.02 100 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 6 NCE80H11D www.VBsemi.com TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e Detail “A” c E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.002 0.254 BSC - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 服务热线：400-655-8788 7 NCE80H11D www.VBsemi.com RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) 服务热线：400-655-8788 8 NCE80H11D www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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