BSV236SP-VB

001 BSV236SP www.VBsemi.com P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 0.045 at VGS = - 2.5 V -4 0.067 at VGS = - 1.8 V -4 Qg (Typ.) 12.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) D 1 6 D D 2 5 D G 3 4 S - Cellular Phone - DSC - Portable Game Console - MP3 - GPS Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 TC = 70 °C TA = 25 °C -4 ID - 4a, b, c - 4a, b, c TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C TC = 70 °C TA = 25 °C - 2.3 IS - 1.3b, c 2.8 1.8 PD W 1.6b, c 1.0b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 25 TC = 25 °C Maximum Power Dissipation V - 4a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 55 to 150 °C 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Symbol Typical Maximum Maximum Junction-to-Ambientb, d t5s RthJA 60 80 Maximum Junction-to-Foot (Drain) Steady State RthJF 34 45 Parameter Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 125 °C/W. 服务热线：400-655-8788 1 BSV236SP www.VBsemi.com SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS ID = - 250 µA VDS = VGS, ID = - 250 µA V - 11 mV/°C 2.6 - 0.4 -1 VDS = 0 V, VGS = ± 10 V ±8 VDS = 0 V, VGS = ± 4.5 V ±1 VDS = - 20 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V RDS(on) VGS = - 2.5 V, ID = - 4.4 A 0.045 VGS = - 1.8 V, ID = - 1 A 0.067 VDS = - 10 V, ID = - 5 A 16 VDS = - 20 V, VGS = 0 V, TJ = 55 °C Forward Transconductancea gfs µA - 10 - 15 VGS = - 4.5 V, ID = - 5 A Drain-Source On-State Resistancea V A 0.034  S Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 8 V, ID = - 5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 22 33 12.5 19 1.8 3.3 f = 1 MHz 0.08 0.86 0.43 150 225 300 450 1620 2430 tf 560 840 td(on) 50 100 td(on) tr td(off) tr td(off) nC VDD = - 10 V, RL = 1.4  ID  - 4 A, VGEN = - 4.5 V, Rg = 1  VDD = - 10 V, RL = 1.4  ID  - 4 A, VGEN = - 10 V, Rg = 1  tf 90 180 2500 3750 600 900 k ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 2.3 - 25 IS = - 4 A, VGS = 0 V IF = - 4 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 18 36 ns 8 16 nC 18 10 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 BSV236SP www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.1 10-4 10-5 IGSS - Gate Current (A) IGSS - Gate Current (mA) 0.08 0.06 0.04 0.02 TJ = 150 °C 10-6 10-7 TJ = 25 °C 10-8 10-9 10-10 0 0 3 6 9 12 15 0 3 VGS - Gate-Source Voltage (V) 6 9 12 15 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 25 5 V GS = 5 V thru 3 V V GS = 2.5 V 4 ID - Drain Current (A) ID - Drain Current (A) 20 15 V GS = 2 V 10 T C = 25 °C 2 T C = 125 °C V GS = 1.5 V 5 3 1 T C = - 55 °C 0 0 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 8 0.10 V GS = 1.8 V VGS - Gate-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) ID = 5 A 0.08 V GS = 2.5 V 0.06 V GS = 4.5 V 0.04 0.02 6 V DS = 5 V V DS = 10 V 4 V DS = 16 V 2 0 0 0 5 10 15 20 ID - Drain Current (A) On-Resistance vs. Drain Current 25 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 3 BSV236SP www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.5 100 IS - Source Current (A) 1.3 (Normalized) RDS(on) - On-Resistance V GS = - 4.5 V; ID = - 5 A V GS = - 2.5 V; ID = - 4.4 A 1.1 T J = 150 °C 10 T J = 25 °C 1 0.9 0.7 - 50 0.1 - 25 0 25 50 75 100 125 150 0 0.5 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.10 0.90 0.08 0.75 ID = - 250 μA VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = - 5 A 0.06 T J = 125 °C 0.04 0.45 T J = 25 °C 0.02 1 2 3 4 0.60 0.30 - 50 5 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 100 30 Limited by RDS(on) * 24 ID - Drain Current (A) Power (W) 10 18 12 100 μs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 6 0 0.001 TA = 25 °C Single Pulse 0.01 0.1 Time (s) Threshold Voltage 1 10 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 BSV236SP www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID - Drain Current (A) 6 Package Limited 4 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 1 0.6 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 BSV236SP www.VBsemi.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 0.02 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 °C/W 3. TJM - TA = PDMZthJA (t) Single Pulse 0.01 10-4 10 4. Surface Mounted -3 10 -2 -1 10 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线：400-655-8788 6 BSV236SP SCĆ70: www.VBsemi.com 6ĆLEADS MILLIMETERS 6 5 Dim A A1 A2 b c D E E1 e e1 L 4 E1 E 1 2 3 -B- e b e1 D -Ac A2 A L A1 INCHES Min Nom Max Min Nom Max 0.90 – 1.10 0.035 – 0.043 – – 0.10 – – 0.004 0.80 – 1.00 0.031 – 0.039 0.15 – 0.30 0.006 – 0.012 0.10 – 0.25 0.004 – 0.010 1.80 2.00 2.20 0.071 0.079 0.087 1.80 2.10 2.40 0.071 0.083 0.094 1.15 1.25 1.35 0.045 0.049 0.053 0.65BSC 0.026BSC 1.20 1.30 1.40 0.047 0.051 0.055 0.10 0.20 0.30 0.004 0.008 0.012 7_Nom 7_Nom ECN: S-03946—Rev. B, 09-Jul-01 DWG: 5550 服务热线：400-655-8788 7 BSV236SP www.VBsemi.com RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead 0.067 0.026 (0.648) 0.045 (1.143) 0.096 (2.438) (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) 8 服务热线：400-655-8788 BSV236SP Disclaimer www.VBsemi.com All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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