S8550

S8550 TRANSISTOR (PNP) FEATURES SOT-23 Complimentary to S8050 Collector current: IC=0.5A MARKING : 1．BASE 2．EMITTER 3．COLLECTOR 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC = -100µA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage MIN MAX UNIT -40 V IC =-1mA, IB=0 -25 V V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 µA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 µA Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 µA IE=0 hFE(1) VCE= -1V, IC= -50mA 200 350 hFE(2) VCE= -1V, IC= -500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB= -50mA -0.6 V Base-emitter saturation voltage VBE(sat) IC=-500mA, IB= -50mA -1.2 V DC current gain VCE= -6V, IC= -20mA Transition frequency Page 1 of 3 fT f=30MHz 150 5/30/2011 MHz Typical Characteristics Page 2 of 3 S8550 5/30/2011 PACKAGE OUTLINE Plastic surface mounted package; 3 leads Page 3 of 3 SOT-23 5/30/2011