ES2G

ES2AB THRU ES2JB Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER Features DO-214AA/SMB  The plastic package carries Underwriters Laboratory Flammability Classification 94V-0  For surface mounted applications  Low reverse leakage  Built-in strain relief,ideal for automated  placement High forward surge current capability  High temperature soldering guaranteed: 0.155(3.94) 0.130(3.30) 0.086 (2.20) 0.071 (1.80) 0.185(4.70) 0.160(4.06) 0.012(0.305) 0.006(0.152)  250°C/10 seconds at terminals Glass passivated chip junction 0.096(2.44) 0.084(2.13) 0.060(1.52) 0.030(0.76) Mechanical Data 0.008(0.203)MAX. 0.220(5.59) 0.200(5.08) Case : JEDEC DO-214AA/SMB Molded plastic body Terminals : Solder plated, solderable per MIL-STD-750,Method 2026 Polarity : Polarity symbol marking on body Mounting Position : Any Weight : 0.003 ounce, 0.095 grams Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Parameter SYMBOLS Marking Code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=55℃ ES2AB ES2BB ES2CB ES2DB ES2EB ES2GB ES2JB MDD ES2AB MDD MDD MDD MDD MDD ES2BB ES2CB ES2DB ES2EB ES2GB MDD ES2JB VRRM VRMS VDC I(AV) 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 600 420 600 UNITS V V V 2.0 A 50 A Peak forward surge current 8.3ms single half sine-wave superimposed onrated load (JEDEC Method) IFSM Maximum instantaneous forward voltage at 2.0A VF Maximum DC reverse current at rated DCblocking voltage IR 5.0 100.0 uA trr 35 ns Maximum reverse recovery time TA=25℃ TA=125℃ (NOTE 1) 1 1.25 1.70 V CJ 60.0 pF Typical thermal resistance (NOTE 3) RJA 40.0 ℃/W Operating junction and storage temperature range TJ,TSTG -55 to +150 ℃ Typical junction capacitance (NOTE 2) Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2% 4.High Temperature Solder Exemptions Applied, see EU Directive Annex 7. DN:T20518A0 http://www.microdiode.com Rev:2020A0 Page :1 ES2AB THRU ES2JB Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Ratings And Characteristic Curves t rr 10 ohm Noninductive 50 ohm Noninductive +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm NonInductive OSCILLOSCOPE Note 1 -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 3.5 300 3.0 100 I R - Reverse Current (μA) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 2.5 2.0 1.5 1.0 0.5 Single phase half-wave 60 Hz resistive or inductive load T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 0 175 20 40 Case Temperature (°C) 10 T J =25°C 1.0 ES2AB~ES2DB ES2EB/ES2GB ES2JB 0.01 0.001 0 0.5 1.0 1.5 80 100 Fig.5 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.4 Typical Forward Characteristics 0.1 60 % of PIV.VOLTS 2.0 2.5 Instaneous Forward Voltage (V) T J =25°C 100 10 T J=25°C f = 1.0MHz V sig = 50mV p-p 1 0.1 1.0 10 100 Reverse Voltage (V) Peak Forward Surge Current (A) Fig.6 Maximum Non-Repetitive Peak Forward Surge Current 80 70 60 50 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 10 100 Number of Cycles The curve above is for reference only. http://www.microdiode.com Rev:2020A0 Page :2 ES2AB THRU ES2JB Reverse Voltage - 50 to 600 Volts Forward Current - 2.0 Ampere Packing information P0 P1 unit:mm d E Item F B A Symbol Tolerance SMB A B C d D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.05 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 3.81 5.41 2.42 1 5.0 330.00 50.00 13.00 1.75 5.55 8.00 4.00 2.00 0.30 12.00 12.30 W Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width P D2 T D1 C W1 D Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. Reel packing PACKAGE SMB REEL SIZE REEL (pcs) COMPONENT SPACING (mm) 13" 3,000 4.0 INNER BOX (mm) REEL DIA, (mm) CARTON SIZE (mm) CARTON (pcs) 190*190*41 330 365*365*360 48,000 BOX (pcs) 6,000 APPROX. GROSS WEIGHT (kg) 14.0 Suggested Pad Layout Symbol A B C D E Unit (mm) 2.8 2.4 Unit (inch) 0.110 4.6 0.094 0.181 2.2 7.0 0.086 0.276 Important Notice and Disclaimer Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design,purchase or use. Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of Microdiode Electronics (Jiangsu). Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support devices or systems without express written approval of Microdiode Electronics (Jiangsu). http://www.microdiode.com Rev:2020A0 Page :3