LM336LP-5.0G

LM236/LM336 Description The LM236 and LM336 are precision 5.0V regula- tor diodes. These voltage reference monolithic ICs operate like 5.0V zener diodes with a low temperature coefficient and a dynamic impedance of 0.6 Ω . A third pin enables adjusting the reference voltage and the temperature coefficient. Features SOP-8  Adjustable 4V to 6V  Low temperature coefficient  Wide operating current of 600 µA to 10 mA  0.6  dynamic impedance  ± 1% initial tolerance available  Guaranteed temperature stability  Easily trimmed for minimum temperature drift  Fast turn-on  Three lead transistor package TO-92 DFN-8 Ordering Information DEVICE Package Type MARKING Packing Packing Qty LM236D-5.0RG SOP-8 236-5.0 REEL 2500pcs/reel LM336D-5.0RG SOP-8 336-5.0 REEL 2500pcs/reel LM236LP-5.0G TO-92 LM236-5.0 BAG 1000pcs/box LM336LP-5.0G TO-92 LM336-5.0 BAG 1000pcs/box LM236DQ-5.0RG DFN-8 236-5.0 REEL 2500pcs/reel LM336DQ-5.0RG DFN-8 336-5.0 REEL 2500pcs/reel Typical Applications 深圳市汉芯半导体有限公司 http://www.hanschip.com 1 / 11 2018 SEP LM236/LM336 Pin Connections DFN-8 3*3 SOP-8 TO-92 Absolute Maximum Ratings Symbol Parameter IR IF Current Reverse Forward Toper Operating Free-air Temperature Range TStg Storage Temperature Range TL LM336 Unit 15 10 mA LM336-5.0: 0 to +70 °C LM236-5.0: -40 to +85 °C -65 to +150 °C 245 °C Lead Temperature (Soldering, 10 seconds) Note:Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not ensured. Electrical Characteristics Symbol VR LM236/LM336 Parameter Reference Breakdown Voltage Tamb = +25°C, IR = 1mA Unit Min. Typ. Max. 4.9 5.0 5.1 V - 6 20 mV - 0.6 2.0 - 4 12 mV - 20 - ppm Reverse Breakdown Voltage Change with Current VR 600µA ≤ IR ≤ 10mA Tamb = +25°C Tmin. ≤ Tamb ≤ Tmax. Reverse Dynamic Impedance (IR = 1mA) ZD Tamb = +25°C f=100Hz Tmin. ≤ Tamb ≤ Tmax. KVT Temperature Stability (VR = 5.0V, I KVH Long Term Stability (Tamb = +25°C ±0.1°C, IR= 1mA) 深圳市汉芯半导体有限公司 http://www.hanschip.com R = 1mA) 2 / 11 2018 SEP LM236/LM336 Typical Performance Characteristics 深圳市汉芯半导体有限公司 http://www.hanschip.com 3 / 11 2018 SEP LM236/LM336 Typical Performance Characteristics (Continued) Application Hints The LMx36-5.0 series voltage references are much easier to use than ordinary zener diodes. Their low impedance and wide operating current range simplify biasing in almost any circuit. Further, either the breakdown voltage or the temperature coefficient can be adjusted to optimize circuit performance. Figure 1 showsanLM336-5.0witha10kpotentiometerfor adjusting the reverse breakdown voltage. With the addition of R1 the breakdown voltage can be adjusted without affecting the temperature coefficient of the device. The adjustment range is usually sufficient to adjust for both the initial device tolerance and inaccuracies in buffer circuitry. If minimum temperature coefficient is desired, four diodes can be added in series with the adjustment potentiometer as shown in Figure 2. When the device is adjusted to 5.00V the temperature coefficient is minimized. Almost any silicon signal diode can be used for this purpose such as a 1N914, 1N4148 or a 1N457. For proper temperature compensation the diodes should be in the same thermal environment as theLM336-5.0.Itisusuallysufficienttomountthediodesnear the LM336-5.0ontheprintedcircuitboard.Theabsolute resistance of the network is not critical and any value from 2k to 20k will work. Because of the wide adjustment range, fixed resistors should be connected in series with the pot to make pot setting less critical. FIGURE1.LM336-5.0withPotforAdjustmentof FIGURE 2. Temperature Coefficient Adjustment Breakdown Voltage (Trim Range = ±1.0V Typical) (Trim Range = ±0.5V Typical) 深圳市汉芯半导体有限公司 http://www.hanschip.com 4 / 11 2018 SEP LM236/LM336 Typical Applications Precision Power Regulator with Low Temperature Coefficient 5V Crowbar LM308A Adjustable Shunt Regulator 深圳市汉芯半导体有限公司 http://www.hanschip.com 5 / 11 2018 SEP LM236/LM336 Typical Applications (Continued) LM308 LM312 LM336 LM336 深圳市汉芯半导体有限公司 http://www.hanschip.com 6 / 11 2018 SEP LM236/LM336 Typical Applications (Continued) LM308 LM312 Schematic Diagram 深圳市汉芯半导体有限公司 http://www.hanschip.com 7 / 11 2018 SEP LM236/LM336 Physical Dimensions SOP-8 Q A C C1 B D A1 a 0.25 b Dimensions In Millimeters(SOP-8) A A1 B C C1 D Min： 1.35 0.05 4.90 5.80 3.80 0.40 0° 0.35 Max： 1.55 0.20 5.10 6.20 4.00 0.80 8° 0.45 Symbol： Q a b 1.27 BSC TO-92 B C D1 D L C1 A b a Dimensions In Millimeters(TO-92) A B C C1 D D1 L a Min： 3.43 4.44 11.2 4.32 3.17 2.03 0.33 0.40 Max： 3.83 5.21 12.7 5.34 4.19 2.67 0.42 0.52 Symbol： 深圳市汉芯半导体有限公司 http://www.hanschip.com 8 / 11 b 1.27BSC 2018 SEP LM236/LM336 Physical Dimensions DFN-8 3*3 B1 F B A a E A1 b Dimensions In Millimeters(DFN-8 3*3) A A1 B B1 E F a Min： 0.85 0.00 2.90 2.90 0.20 0.30 0.20 Max： 0.95 0.05 3.10 3.10 0.25 0.50 0.34 Symbol： 深圳市汉芯半导体有限公司 http://www.hanschip.com 9 / 11 b 0.65 BSC 2018 SEP LM236/LM336 Revision History DATE REVISION 2018-9-15 New 2023-9-13 Update Lead Temperature、Add annotation for Maximum Ratings. 深圳市汉芯半导体有限公司 http://www.hanschip.com PAGE 1-11 10 / 11 2 2018 SEP LM236/LM336 IMPORTANT STATEMENT: Hanschip Semiconductor reserves the right to change its products and services without notice. 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The use of testing and other quality control technologies is limited to the quality assurance scope of Hanschip Semiconductor. Not all parameters of each device need to be tested. The documentation of Hanschip Semiconductor authorizes you to use these resources only for developing the application of the product described in this document. You have no right to use any other Hanschip Semiconductor intellectual property rights or any third party intellectual property rights. It is strictly forbidden to make other copies or displays of these resources. You should fully compensate Hanschip Semiconductor and its agents for any claims, damages, costs, losses and debts caused by the use of these resources. Hanschip Semiconductor accepts no liability for any loss or damage caused by infringement. 深圳市汉芯半导体有限公司 http://www.hanschip.com 11 / 11 2018 SEP