HT285T-1.2

HT285-xx/HT385-xx Micropower Voltage Reference Diodes The HT285/HT385 series are micropower two−terminal bandgap voltage regulator diodes. Designed to operate over a wide current range of 10 A to 20 mA, these devices feature exceptionally low dynamic impedance, low noise and stable operation over time and temperature. Tight voltage tolerances are achieved by on−chip trimming. The large dynamic operating range enables these devices to be used in applications with widely varying supplies with excellent regulation. Extremely low operating current make these devices ideal for micropower circuitry like portable instrumentation, regulators and other analog circuitry where extended battery life is required. The HT285/HT385 series are packaged in a low cost TO−226 plastic case and are available in two voltage versions of 1.235 V and 2.500 V as denoted by the device suffix (see Ordering Information table). The HT285 is specified over a −40°C to +85°C temperature range while the HT385 is rated from 0°C to +70°C. The HT385 is also available in a surface mount plastic package in voltages of 1.235 V and 2.500 V. Features • • • • • • Operating Current from 10 mA to 20 mA 1.0%, 1.5%, 2.0% and 3.0% Initial Tolerance Grades Low Temperature Coefficient 1.0 W Dynamic Impedance Surface Mount Package Available These Devices are Pb−Free and are RoHS Compliant SOP89-3 D SUFFIX HT385D-xx HT285D-xx MSOP−8 M SUFFIX HT385M-xx HT285M-xx SOP−8 R SUFFIX HT385R-xx HT285R-xx TO92 M SUFFIX HT385T-xx HT285T-xx PIN CONNECTIONS TO-92-3L T SUFFIX HT385AT-xx (Bottom View) 1 2 3 N.C. 1 8 N.C. 2 7 N.C. N.C. 3 6 N.C. Anode 4 5 N.C. Cathode HT285AT-xx Rev. 00 HT285-xx/HT385-xx Representative Schematic Diagram Cathode 10 k 360 k Open for 1.235 V 600 k 8.45 k 74.3 k Open for 2.5 V 600 k 425 k 500 W 600 k 100 k Anode Standard Application 1.5 V Battery + - 3.3 k 1.235 V HT385−1.2 Rev. 00 HT285-xx/HT385-xx MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Rating Symbol Value Unit Reverse Current IR 30 mA Forward Current IF 10 mA Operating Ambient Temperature Range °C TA HT285 HT385 −40 to +85 0 to +70 TJ +150 °C Storage Temperature Range Tstg −65 to + 150 °C Electrostatic Discharge Sensitivity (ESD) Human Body Model (HBM) Machine Model (MM) Charged Device Model (CDM) ESD Operating Junction Temperature V 4000 400 2000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) HT285−1.2 Characteristic Symbol Reverse Breakdown Voltage (IRmin v IR v 20 mA) HT285−1.2/HT385R−1.2 TA = Tlow to Thigh (Note 1) HT385−1.2 TA = Tlow to Thigh (Note 1) V(BR)R Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 1) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 1) Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 10 mA v IR v 20 mA, TA = Tlow to Thigh (Note 1) Typ Max Min Typ Max 1.223 1.200 − − 1.235 − − − 1.247 1.270 − − 1.223 1.210 1.205 1.192 1.235 − 1.235 − 1.247 1.260 1.260 1.273 − − 8.0 − 10 20 − 8.0 − 15 20 − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 1.0 1.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 60 − − 60 − − 20 − − 20 − 2.462 2.415 − − 2.5 − − − 2.538 2.585 − − 2.462 2.436 2.425 2.400 2.5 − 2.5 − 2.538 2.564 2.575 2.600 − − 13 − 20 30 − − 13 − 20 30 mA mV W Z DV(BR)/DT Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S ppm/°C mV ppm/kHR V(BR)R IRmin Unit V DV(BR)R n Minimum Operating Current TA = 25°C TA = Tlow to Thigh (Note 1) Min IRmin Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz Reverse Breakdown Voltage (IRmin v IR v 20 mA) HT285−2.5/HT385R−2.5 TA = Tlow to Thigh (Note 1) HT385−2.5 TA = Tlow to Thigh (Note 1) HT385−1.2/HT385R−1.2 V mA Rev. 00 HT285-xx/HT385-xx ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted) HT285−1.2 Characteristic Symbol Reverse Breakdown Voltage Change with Current IRmin v IR v 1.0 mA, TA = +25°C TA = Tlow to Thigh (Note 2) 1.0 mA v IR v 20 mA, TA = +25°C TA = Tlow to Thigh (Note 2) DV(BR)R Reverse Dynamic Impedance IR = 100 mA, TA = +25°C Average Temperature Coefficient 20 mA v IR v 20 mA, TA = Tlow to Thigh (Note 2) HT385−1.2/HT385R−1.2 Min Typ Max Min Typ Max − − − − − − − − 1.0 1.5 10 20 − − − − − − − − 2.0 2.5 20 25 − 0.6 − − 0.6 − − 80 − − 80 − − 120 − − 120 − − 20 − − 20 − mV W Z DV(BR)/DT Wideband Noise (RMS) IR = 100 mA, 10 Hz v f v 10 kHz n Long Term Stability IR = 100 mA, TA = +25°C ± 0.1°C S Unit ppm/°C mV ppm/kHR Rev. 00 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C 1.0 +25°C 0.1 0 0.2 -40°C 0.4 0.6 0.8 1.0 V(BR), REVERSE VOLTAGE (V) 1.2 1.4 ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) HT285-xx/HT385-xx 10 8.0 TA = +85°C 6.0 +25°C 4.0 -40°C 2.0 0 -2.0 0.01 0.1 Figure 2. Reverse Characteristics 1.0 10 IR, REVERSE CURRENT (mA) 100 Figure 3. Reverse Characteristics 1.2 V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.250 1.0 TA = -40°C 0.8 0.6 +25°C +85°C 0.4 0.2 0 0.01 1.230 1.220 1.210 0.1 1.0 10 IF, FORWARD CURRENT (mA) IR = 100 mA 1.240 100 -50 Figure 4. Forward Characteristics 1.50 1.25 OUTPUT (V) 750 625 500 125 Input 100 k 1.00 0.75 Output 0.50 DUT 0.25 375 0 250 INPUT (V) √Hz) 100 Figure 5. Temperature Drift 875 e n , NOISE (nV/ -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 125 0 10 100 1.0K f, FREQUENCY (Hz) 10K Figure 6. Noise Voltage 100k 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 1.0 1.1 Figure 7. Response Time Rev. 00 IR, REVERSE CURRENT (A) μ 100 10 TA = +85°C +25°C 1.0 -40°C 0.1 0 0.5 1.0 1.5 2.0 2.5 V(BR), REVERSE VOLTAGE (V) 3.0 3.5 ΔV(BR)R, REVERSE VOLTAGE CHANGE (mV) HT285-xx/HT385-xx 10 TA = +85°C 8.0 6.0 +25°C 2.0 0 -2.0 0.01 0.1 Figure 8. Reverse Characteristics V(BR)R, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 1.0 TA = -40°C 0.8 0.6 +85°C +25°C 0.2 0 0.01 2.520 1.0 10 IF, FORWARD CURRENT (mA) 2.500 2.490 2.480 2.470 2.460 100 -50 -25 0 25 50 75 TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 11. Temperature Drift Figure 10. Forward Characteristics 3.00 2.50 √Hz) OUTPUT (V) 1500 1250 1000 Input 100 k 2.00 1.50 Output 1.00 DUT 0.50 750 0 500 INPUT (V) e n , NOISE (nV/ 100 IR = 100 mA 2.510 2.450 0.1 1.0 10 IR, REVERSE CURRENT (mA) Figure 9. Reverse Characteristics 1.2 0.4 -40°C 4.0 250 0 10 100 1.0K f, FREQUENCY (Hz) 10K Figure 12. Noise Voltage 100k 10 5.0 0 0 0.1 0.2 0.3 0.6 0.7 t, TIME (ms) 0.8 0.9 1.0 1.1 Figure 13. Response Time Rev. 00 HT285-xx/HT385-xx TO−92 (TO−226) CASE 29−11 ISSUE AM PACKAGE DIMENSIONS A B STRAIGHT LEAD BULK PACK R P NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. L SEATING PLANE K D X X G J H V C SECTION X−X 1 N DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --- N Rev. 00 HT285-xx/HT385-xx PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 1.52 0.060 7.0 0.275 0.6 0.024 4.0 0.155 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Rev. 00 HT285-xx/HT385-xx Rev. 00