WSD3066DN33
N-Channel MOSFET
General Description
Product Summery
The WSD3066DN33 is the highest performance
trench N-Channel MOSFETs with extreme high cell
density, which provide excellent RDS(ON) and gate
charge for most of the synchronous buck converter
applications.
BVDSS
RDS(ON)
ID
30V
4.7mΩ
66A
Applications
The WSD3066DN33 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
⚫ High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
⚫ Networking DC-DC Power System
⚫ Load Switch
Features
⚫
⚫
⚫
⚫
⚫
DFN3x3-8L Pin Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
D1 (5,6,7,8)
(4)
G1
S1 (1,2,3)
Absolute Maximum Ratings
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±20
ID @TC =25°C
Continuous Drain Current, VGS @ 10V 1
66
ID @TC =100°C
Continuous Drain Current, VGS @ 10V 1
40
ID @TA =25°C
Continuous Drain Current, VGS @ 10V 1
15
ID @TA =70°C
Continuous Drain Current, VGS @ 10V
1
10
IDM @TC =25°C
Pulsed Drain Current
2
V
A
150
EAS
Avalanche Energy, Single Pulse (L=0.1mH)
3
IAS
Avalanche Current, Single pulse(L=0.1mH)
3
PD @TC =25°C
Total Power Dissipation
4
45
Total Power Dissipation
4
1.78
PD @TA =25°C
Units
125
mJ
50
A
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
W
°C
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
www.winsok.tw
Page 1
1
1
Typ.
Max.
---
70
---
2.7
Units
°C/W
Rev 3.0: Nov. 2023
WSD3066DN33
N-Channel MOSFET
Electrical Characteristics (TJ =25°C, Unless Otherwise Noted)
Symbol
BVDSS
∆BVDSS /∆TJ
Parameter
Conditions
Min.
Typ.
Max.
Units
---
V
V/°C
Drain-Source Breakdown Voltage
VGS =0V , ID =250μA
30
---
BVDSS Temperature Coefficient
Reference to 25°C, ID =1mA
---
0.028
---
VGS =10V , ID =40A
---
4.7
5.7
VGS =4.5V , ID =20A
---
5.8
7.6
1.5
1.8
2.5
V
---
-6.06
---
mV/°C
-----
1.0
VDS =24V , VGS =0V , TJ =55°C
-----
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
2
VGS =VDS , ID =250μA
mΩ
∆VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS =±20V , VDS =0V
---
---
±100
nA
gfs
Forward Transconductance
VDS =5V , ID =20A
---
44
---
S
VDS =0V , VGS =0V , f = 1.0MHz
---
1.0
1.1
Ω
---
27.5
38.5
---
9.6
13.4
VDS =24V , VGS =0V , TJ =25°C
30
μA
Rg
Gate Resistance
Qg
Total Gate Charge (4.5V)
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
---
9.4
13.7
Td(on)
Turn-On Delay Time
---
18.5
34
---
11.3
21
---
62.5
114
Fall Time
---
23.5
43
Ciss
Input Capacitance
---
1320
1420
Coss
Output Capacitance
---
610
640
Crss
Reverse Transfer Capacitance
---
112
150
Min.
Typ.
Max.
Units
---
125
---
mJ
Min.
Typ.
Max.
Units
---
---
15
A
---
---
45
A
---
---
1.0
V
---
23
---
ns
---
7
---
nC
Tr
Td(off)
Tf
VDS =15V , VGS =4.5V , ID =20A
Rise Time
VDD =15V , VGEN =10V ,
RG =6Ω , ID =1A , RL =15Ω
Turn-Off Delay Time
VDS =15V , VGS =0V , f = 1.0MHz
nC
ns
pF
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Conditions
Single Pulse Avalanche Energy
5
VDD =25V , L=0.5mH , IAS =20A
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
Pulsed Source Curren
2,6
VSD
Diode Forward Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISM
Conditions
1,6
VG =VD =0V , Force Current
VGS =0V , IS =1A , TJ =25°C
IF =40A, dI/dt=100A/µs,TJ =25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, t
