USBLC6-2SC6
2-Line Uni-directional TVS Diode
Description
Features
The USBLC6-2SC6 is an ultra low capacitance
TVS array, utilizing leading monolithic silicon technology to provide fast response time and low ESD
clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data
Ultra low capacitance: 0.6pF typical (I/O-GND)
Ultra low leakage: nA level
Low operating voltage: 5.0V
to
r
IEC 61000-4-2 (ESD) standard with ±15kV air and
±8kV contact discharge. It is assembled into a 6-pin
lead-free SOT23-6 package. The combination of
small size, ultra low capacitance, and high ESD surge
capability make it ideal for use in applications such
as multimedia, and other high speed ports.
Up to 4 data lines and one power lineprotects
Low clamping voltage
Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
uc
with a typical value at 0.6 pF, and complies with the
Air : ±20kV; discharge: ±15kV
– IEC61000-4-5 (Lightning) 4.5A (8/20μs)
nd
lines. The USBLC6-2SC6 has an ultra-low capacitance
SOT23-6 Package
co
RoHS Compliant
Se
mi
Circuit Diagram
Applications
6
1
I/O1
Monitors and flat panel displays
Set-top box and Digital TV
GND
2
5
VBUS
Video graphics cards
I/O2
3
4
O
I/O1
Digital Video Interface (DVI)
Notebook Computers
PCI Express and Serial SATA Ports
MI
CR
I/O2
JS
Marking Diagram
UL26
Ordering Information
Part Number
Packaging
Reel Size
USBLC6-2SC6
3000/Tape & Reel
7 inch
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第1页,共4页
USBLC6-2SC6
2-Line Uni-directional TVS Diode
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Value
Unit
Peak Pulse Power (8/20µs,I/O-GND)
Ppk
60
W
Peak Pulse Power (8/20µs,Vcc-GND)
Ppk
300
W
Peak Pulse Current (8/20µs,I/O-GND)
IPP
Peak Pulse Current (8/20µs,Vcc-GND)
IPP
ESD per IEC 61000−4−2 (Air)
VESD,VDD
ESD per IEC 61000−4−2 (Contact)
VESD,I/O
TJ
4.5
A
17
A
±20
kV
±15
−55 to +125
°C
−55 to +150
°C
nd
Operating Temperature Range
to
r
Symbol
uc
Parameter
Tstg
co
Storage Temperature Range
Parameter
Se
mi
Electrical Characteristics (TA=25°C unless otherwise specified)
Symbol
Reverse Working Voltage
VRWM
O
VBR
Breakdown Voltage
Test Condition
Min
Typ
Pin 5 to GND,I/O-GND
IT = 1mA(Pin 5 to GND,I/O-GND)
6.0
7.5
Max
Unit
5.0
V
8.5
V
0.5
µA
IR
VRWM = 5.0V
VF
IF = 15mA,GND to Pin 5/IO
0.8
1.0
V
Clamping Voltage
VC
IPP = 4.5A (8 x 20µs pulse, I/O to
GND)
14.0
15.0
V
Clamping Voltage
VC
16.0
18.0
V
Junction Capacitance
CJ
0.6
0.7
pF
Junction Capacitance
CJ
0.3
0.4
pF
CR
Reverse Leakage Current
JS
MI
Forward Breakdown Voltage
IPP = 17A (8 x 20µs pulse,Pin 5
to GND)
Vpin5 = 5V, I/O=0V,
f = 1MHz,I/O-GND
Vpin5 = 5V, I/O=0V,
f = 1MHz,I/O-I/O pins
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第2页,共4页
USBLC6-2SC6
2-Line Uni-directional TVS Diode
Typical Performance Characteristics (TA=25°C unless otherwise Specified)
CJ-Junction Capacitance (pF)
0.7
0.6
0.5
to
r
0.4
0.3
0.2
uc
0.1
0
0
1
2
3
4
5
nd
VR—Reverse Voltage(V)
Clamping Voltage vs. Peak Pulse Current
Junction Capacitance vs. Reverse Voltage
co
0.1
-20
O
0.01
1.0
10.0
Pulse Duration_tp(uS)
MI
40
20
0
50
75
100
125
150
Ipp-Peak Pulse Current-%of Ipp
60
25
60
80
100
120
80
0
40
IEC61000−4−2 Pulse Waveform
JS
% of Rated Power
100
20
Time (nS)
Peak Pulse Power vs. Pulse Time
120
0
100.0
CR
0.1
Voltage (V)
1
Se
mi
Peak Power_Ppp(kW)
10
Ambient Temperature_Ta(℃)
100
80
60
40
20
0
-20
-20
0
20
40
60
T-Time(us)
Power Derating Curve
8 X 20us Pulse Waveform
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第3页,共4页
USBLC6-2SC6
2-Line Uni-directional TVS Diode
SOT23-6 Package Outline Drawing
2X E/2
E1
ccc
C
A
A1
A2
b
c
D
E1
E
e
e1
N
aaa
ccc
E
e
2X N/2 TIPS
B
D
aaa
A2
C
A1
0.045
0.114
0.063
0.110 BSC
0.037 BSC
0.075 BSC
6
0.004
0.008
MAX
0.057
0.006
0.051
0.020
0.009
0.122
0.069
Se
mi
co
bxN
A
INCHES
NOM
to
r
SYM
DIMENSIONS
MILLIMETERS
MIN
NOM
MAX
MIN
0.90
1.45
0.035
0.00
0.15
0.000
0.90
1.15
1.30
0.035
0.25
0.50
0.010
0.08
0.22
0.003
2.80
2.90
3.10
0.110
1.50
1.60
1.75
0.060
2.80 BSC
0.95 BSC
1.90 BSC
6
0.10
0.20
uc
e1
nd
A
Suggested Land Pattern
X
CR
O
SYM
G
MI
C
Y
INCHES
0.098
0.055
0.037
0.024
0.043
0.141
JS
P
Z
C
G
P
X
Y
Z
DIMENSIONS
MILLIMETERS
2.50
1.40
0.95
0.60
1.10
3.60
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第4页,共4页
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