PESDUC2FD5VU

PESDUC2FD5VU 1-Line Uni-directional ESD Diode Circuit Diagram Description The PESDUC2FD5VU is a Uni-directional TVS diode, utilizing leading monolithic silicon technology to pro-vide fast response time and low ESD clamping volt-age, making this device an ideal solution for protect-ing voltage sensitive highspeed data lines. The PESDUC2FD5VU has an ultra -low capacitance with a typi-cal value at 0.5 pF, and complies with the IEC 61000-4-2 (ESD) standard with ±15kV air and ±8kV contact discharge. It is assembled into an ultra-small 1.0x0.6x0.5mm lead-free DFN package. The small size, ultra-low capacitance and high ESD surge pro-tection make PESDUC2FD5VU an ideal choice to protect cell phone, digital video interfaces and other high Ultra small package: 1.0x0.6x0.5mm  Ultra low capacitance: 0.5pF typical  Ultra low leakage: nA level  Low operating voltage: 5V  Low clamping voltage  2-pin leadless package  Complies with following standards: O CR MI Air discharge: ±20kV JS Contact discharge: ±15kV – IEC61000-4-5 (Lightning) 4.5A (8/20μs) RoHS Compliant  Lead Finish: NiPdAu to r uc ZX X = Device Code Z = Date Code* Applications – IEC 61000-4-2 (ESD) immunity test  nd Se mi  Marking Diagram co Features Circuit Diagram  Smart phones  Display Ports  MDDI Ports  USB Ports  Digital Video Interface (DVI)  PCI Express and Serial SATA Ports Ordering Information Part Number Packaging PESDUC2FD5VU 10000/Tape & Reel www.jsmsemi.com Reel Size 7 inch 第１页，共４页 PESDUC2FD5VU 1-Line Uni-directional ESD Diode Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 80 W Peak Pulse Current (8/20µs) IPP 4.5 A ESD per IEC 61000−4−2 (Air) to r Parameter ±22 VESD Operating Temperature Range TJ Tstg −55 to +125 °C −55 to +150 °C nd Storage Temperature Range kV ±22 uc ESD per IEC 61000−4−2 (Contact) Symbol Reverse Working Voltage Breakdown Voltage Test Condition Se mi Parameter co Electrical Characteristics (TA=25°C unless otherwise specified) Min Typ VRWM VBR IT = 1mA 6.0 7.0 Max Unit 5.0 V 8.5 V IR VRWM = 5.0V 0.2 µA Clamping Voltage VC IPP = 1A (8 x 20µs pulse) 9.0 V VC IPP = 4.5A (8 x 20µs pulse) 16 V CJ VR = 0V, f = 1MHz 0.6 pF CR Clamping Voltage O Reverse Leakage Current 0.5 MI Junction Capacitance JS Portion Electronics Parameter Symbol IT IPP Vc Parameter Test Current Maximum Reverse Peak Pulse Current Clamping Voltage @Ic www.jsmsemi.com 第２页，共４页 PESDUC2FD5VU 1-Line Uni-directional ESD Diode Typical Performance Characteristics (TA=25°C unless otherwise Specified) 20 0.7 0.6 0.5 0.4 0.3 0.2 0.1 16 12 8 4 0 0 1 2 3 4 0 5 0 VR—Reverse Voltage(V) 1 2 4 5 nd Clamping Voltage vs. Peak Pulse Current Se mi 10 1 0.01 0.1 1 O 0.1 10 Voltage (V) co 100 -20 100 0 20 CR Peak Pulse Power vs. Pulse Time 60 40 20 0 25 50 75 100 125 150 Ipp-Peak Pulse Current-%of Ipp 80 0 80 100 120 JS 100 60 IEC61000−4−2 Pulse Waveform MI 120 40 Time (nS) Pulse Duration_tp(uS) % of Rated Power 3 Ipp-Peak Pulse Current(A) Junction Capacitance vs. Reverse Voltage Peak Power_Ppp(kW) to r 0.8 uc 0.9 Vc-Clamping Voltage(V) CJ-Junction Capacitance (pF) 1 100 80 60 40 20 0 -20 Ambient Temperature_Ta(℃) -20 0 20 40 60 T-Time(us) 8 X 20us Pulse Waveform Power Derating Curve www.jsmsemi.com 第３页，共４页 PESDUC2FD5VU 1-Line Uni-directional ESD Diode DFN1006-2 Package Outline Drawing h - b E - L A1 c A Bottom View A A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.45 0.50 0.55 0.018 0.020 0.022 c 0.12 0.15 0.18 0.005 0.006 0.007 D 0.95 1.00 1.05 0.037 0.039 0.041 SYM e to r h DIMENSIONS MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.45 0.50 0.55 0.018 0.020 0.022 0.65 BSC 0.026 BSC E 0.55 0.60 0.65 0.022 0.024 0.026 L 0.20 0.25 0.30 0.008 0.010 0.012 h 0.07 0.12 0.17 0.003 0.005 0.007 co nd uc e D Se mi Suggested Land Pattern SYM ╋ Y3 Y1 Y2 Z CR O ╋ DIMENSIONS MILLIMETERS INCHES X 0.60 0.024 Y1 0.50 0.020 Y2 0.30 0.012 Y3 0.80 0.032 Z 1.30 0.052 JS MI X www.jsmsemi.com 第４页，共４页