SMF30CA

SMF SERIES SOD-1 23FL Plastic-Encapsulate Diodes Transient Voltage Suppressor Diodes Features ●PPP 200W 5.0V- 440V ●VRWM ●Glass passivated chip Applications ●Clamping Voltage SOD- 1 23 FL Marking ● SMF XXCA/XXA XX : From 5.0 To 440 Item Bi-directional Uni-direction Symbol Unit Conditions Peak power dissipation PPPM W with a 10/1000us waveform 200 Peak pulse current IPPM A with a 10/1000us waveform See Next Table TJ,TSTG ℃ RθJL ℃/W Between junction and lead 26 RθJA ℃/W Between junction and Ambient 300 Operating junction and storage temperature range Max -55 to +150 Thermal resistance Notes: (1) Non-repetitive current pulse at TA=25℃，per waveform of Figure 2. (2) TL=30℃ unless otherwise noted , VF ≤1.25Volts@200mA High Diode Semiconductor 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Part Number UNI-POLAR SMF5.0A SMF6.0A SMF6.5A SMF7.0A SMF7.5A SMF8.0A SMF8.5A SMF9.0A SMF10A SMF11A SMF12A SMF13A SMF14A SMF15A SMF16A SMF17A SMF18A SMF20A SMF22A SMF24A SMF26A SMF28A SMF30A SMF33A SMF36A SMF40A SMF43A SMF45A SMF48A SMF51A SMF54A SMF58A SMF60A SMF64A SMF70A SMF75A SMF78A SMF85A SMF90A SMF100A SMF110A SMF120A SMF130A SMF150A SMF160A SMF170A SMF180A SMF190A SMF200A SMF210A SMF220A SMF250A SMF300A SMF350A SMF400A SMF440A BI-POLAR SMF5.0CA SMF6.0CA SMF6.5CA SMF7.0CA SMF7.5CA SMF8.0CA SMF8.5CA SMF9.0CA SMF10CA SMF11CA SMF12CA SMF13CA SMF14CA SMF15CA SMF16CA SMF17CA SMF18CA SMF20CA SMF22CA SMF24CA SMF26CA SMF28CA SMF30CA SMF33CA SMF36CA SMF40CA SMF43CA SMF45CA SMF48CA SMF51CA SMF54CA SMF58CA SMF60CA SMF64CA SMF70CA SMF75CA SMF78CA SMF85CA SMF90CA SMF100CA SMF110CA SMF120CA SMF130CA SMF150CA SMF160CA SMF170CA SMF180CA SMF190CA SMF200CA SMF210CA SMF220CA Reverse Stand off Voltage VRWM(V) 5.0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 33.0 36.0 40.0 43.0 45.0 48.0 51.0 54.0 58.0 60.0 64.0 70.0 75.0 78.0 85.0 90.0 100.0 110.0 120.0 130.0 150.0 160.0 170.0 180.0 190.0 200.0 210.0 220.0 250.0 300.0 350.0 400.0 440.0 Breakdown Voltage VBR@IT Min.(V) Max.(V) 6.40 6.67 7.22 7.78 8.33 8.89 9.44 10.00 11.10 12.20 13.30 14.40 15.60 16.70 17.80 18.90 20.00 22.00 24.40 26.70 28.90 31.10 33.50 36.70 40.00 44.40 47.80 50.00 53.30 56.70 60.00 64.40 66.70 71.10 77.80 83.30 86.70 94.4 100.0 111.0 122.0 133.0 144.0 167.0 178.0 189.0 201.0 209.0 224.0 231.0 246.0 279.0 335.0 391.0 447.0 492.0 7.00 7.37 7.98 8.60 9.21 9.83 10.40 11.10 12.30 13.50 14.70 15.90 17.20 18.50 19.70 20.90 22.10 24.50 26.90 29.50 31.90 34.40 36.80 40.60 44.20 49.10 52.80 55.30 58.90 62.70 66.30 71.20 73.70 78.60 86.00 92.10 95.80 104.0 111.0 123.0 135.0 147.0 159.0 185.0 197.0 209.0 222.0 243.0 247.0 268.0 272.0 309.0 371.0 432.0 494.0 543.0 Test Current IT(mA) 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 Max Max Peak Clamping Pulse Voltage@Ipp Current VC MAX.(V) IPP(A) 9.2 10.3 11.2 12 12.9 13.6 14.4 15.4 17 18.2 19.9 21.5 23.2 24.4 26 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 137.0 146.0 162.0 177.0 193.0 209.0 243.0 259.0 275.0 292.0 308.0 324.0 340.0 356.0 405.0 486.0 567.0 648.0 713.0 21.7 19.4 17.8 16.6 15.5 14.7 13.8 13 11.7 11 10 9.3 8.6 8.2 7.7 7.2 6.8 6.1 5.6 5.1 4.7 4.4 4.1 3.7 3.4 3.1 2.9 2.7 2.6 2.4 2.3 2.1 2 1.9 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.7 0.7 0.6 0.6 0.6 0.5 0.5 0.4 0.3 0.3 0.3 High Diode Semiconductor Max Reverse Leakage@VRWM IR(uA) 800 800 500 200 100 50 20 10 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 Typical Characteristics 10000 100 CT , JUNCTION CAPACITANCE (pF) PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT Tj = 25°C 75 50 25 Unidirectional 1000 Bidirectional 100 10 X 1000 Waveform as defined by REA 0 10 0 25 50 75 1 100 125 150 175 200 10 10,000 1,000 100 100 Peak Value I pp Half Value I pp/2 50 tp 10 10 X 1000 Waveform as defined by R.E.A. 0 0.1 1 10 100 1,000 40 30 20 10 0 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz Fig. 5 Maximum Non-Repetitive Surge Current 3 2 t, TIME (ms) Fig. 4 Pulse Waveform PM(AV), STEADY STATE POWER DISSIPATION (W) Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 1 1 td(μs) 60 50 0 10,000 FIG3:Peak Pulse Power Rating Curve PEAK FORWARD SURGE CURRENT, (A) 1000 VWM, STANDOFF VOLTAGE (V) Fig. 2 Typical Total Capacitance IP, PEAK PULSE CURRENT (%Ipp) PPPM(W) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Pulse Derating Curve 100 1.0 0.8 0.6 0.4 60Hz Resistive or Inductive Load 0.2 0.0 0 25 50 75 100 125 150 175 200 TL, LEAD TEMPERATURE (°C) Fig. 6 Steady State Power Derating Curve High Diode Semiconductor 3 SOD-1 23FL 1.8± 0.1 １．０ ±0.15 Cathode Band Top View 1.3± 0.1 0.12-0.20 2.8 ±0.15 0.8±0.1 3.7 ±0.15 Dimensions in millimeters SOD-1 23FL 1.4 2.85 1.2 JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOD-123FL FIG : CONFIGURATION OF SURFACE MOUNTED DEVICES TAPING SOD-123FL 54 1.0 2.13 0.039 High Diode Semiconductor 5